Monolithic CMOS MEMS Oscillator Circuit for Sensing in the Attogram Range

Verd, J.; Uranga, A.; Abadal, G.; Teva, J.; Torres, F.; Lopez, J.L.; Pérez‐Murano, F.; Estéve, J.; Barniol, N.

doi:10.1109/led.2007.914085

Cited by 119 publications

(70 citation statements)

References 15 publications

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“…For long time constant, the minimum Allan deviation reaches 6 × 10 −7 . This value is quite a classical one, reported in many papers (see [3,9,22] for example), and might be considered as the experimental limit.…”

Section: Allan Deviationmentioning

confidence: 79%

In-plane nanoelectromechanical resonators based on silicon nanowire piezoresistive detection

et al. 2010

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We report an actuation/detection scheme with a top-down nanoelectromechanical system (NEMS) for frequency shift based sensing applications with outstanding performance. It relies on electrostatic actuation and piezoresistive nanowire gauges for in-plane motion transduction. The process fabrication is fully CMOS (complementary metal-oxide-semiconductor) compatible. The results show a very large dynamic range of more than 100 dB and an unprecedented signal to background ratio of 69 dB providing an improvement of two orders of magnitude in the detection efficiency presented in the state of the art in NEMS fields. Such a dynamic range results from both negligible 1/ f noise and very low Johnson noise compared to the thermomechanical noise. This simple low power detection scheme paves the way for new class of robust mass resonant sensors.

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Section: Allan Deviationmentioning

confidence: 79%

In-plane nanoelectromechanical resonators based on silicon nanowire piezoresistive detection

et al. 2010

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“…The sustaining amplifier ensures that the motional current from the transducer is stable by providing a controlled actuation voltage that is matched in phase with the detected current. 11,13,14 The resulting oscillation frequency is, therefore, very close to the resonance frequency, and can then be measured by frequency counting. The oscillator-based readout scheme has been previously demonstrated to be very accurate in tracking the resonance frequency of the aforementioned resonators.…”

Section: B Oscillator-based Readoutmentioning

confidence: 82%

An energy-efficient readout circuit for resonant sensors based on ring-down measurement

Zhou

Pertijs

Karabacak

2013

Review of Scientific Instruments

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This paper presents an energy-efficient readout circuit for resonant sensors that operates based on a transient measurement method. The resonant sensor is driven at a frequency close to its resonance frequency by an excitation source that can be intermittently disconnected, causing the sensor to oscillate at its resonance frequency with exponentially decaying amplitude. By counting the zero crossings of this ring-down response, the interface circuit can detect the resonance frequency. In contrast with oscillator-based readout, the presented readout circuit is readily able to detect quality factor (Q) of the resonator from the envelope of the ring-down response, and can be used even in the presence of large parasitic capacitors. A prototype of the readout circuit has been integrated in 0.35 μm CMOS technology, and consumes only 36 μA from a 3.3 V supply during a measurement time of 2 ms. The resonance frequency and quality factor of a micro-machined SiN resonator obtained using this prototype are in good agreement with results obtained using impedance analysis. Furthermore, a clear transient response is observed to ethanol flow using the presented readout, demonstrating the use of this technique in sensing applications.

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“…There are three common methods to perform these two operations: impedance analysis, oscillator-based read-out and ring-down measurement [6]. The first method is in general time consuming because the reading operation is based on a sweep in frequency of the exciting source [7]; the second one is characterized by high power dissipation [8,9] mainly due the control system necessary to track the resonant frequency. Therefore, in this paper the third method will be applied to read-out the sensor.…”

Section: Introductionmentioning

confidence: 99%

Design and Modelling of a Bidirectional Front-End for Resonating Sensors Based on Pseudo Floating Gate Amplifier

2017

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Abstract:In this paper, we characterize and model a bidirectional front-end based on pseudo-floating gate amplifier (PFGA) for actuation and read-out of resonating sensors. The basic idea consists of swapping the power supply of the PFGA in order to change the directionality of the front-end. A detailed description of the system has been discussed in this paper and supported by simulations and measurement results. A prototype has been fabricated using discrete components and tested with a real transducer (Murata MA40S4) and a Butterworth Van Dyke (BvD) load, which has proved to be proved to be a well approximated model for resonant sensors. The bidirectional amplifier has been implemented with the integrated circuit CD4007UB, which is a commercial discrete component containing low leakage MOSFET. The values chosen for the BvD load are R b = 330 Ω, L m = 60 mH, C s = 450 pF, C E = 2.2 nF, which are approximately the same values of the lumped parameters reported in the data-sheet of the real sensor. This transducer is characterized by a nominal resonant frequency of 40 kHz. Measurement results show good fitting with the models developed in this work and the possibility to predict the sensor response by using the BvD load.

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Monolithic CMOS MEMS Oscillator Circuit for Sensing in the Attogram Range

Cited by 119 publications

References 15 publications

In-plane nanoelectromechanical resonators based on silicon nanowire piezoresistive detection

In-plane nanoelectromechanical resonators based on silicon nanowire piezoresistive detection

An energy-efficient readout circuit for resonant sensors based on ring-down measurement

Design and Modelling of a Bidirectional Front-End for Resonating Sensors Based on Pseudo Floating Gate Amplifier

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