Monolayer-ReS2 field effect transistor using monolayer-graphene as electrodes

Liu, Manman; Zhang, Lijie; Liang, Jieyuan; Li, Xiaoxiao; Dong, Youqing; Zou, Chao; Yang, Yun; Yang, Keqin; Huang, Shaoming

doi:10.1016/j.physb.2018.11.024

Cited by 6 publications

(10 citation statements)

References 30 publications

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“…The fabrication results have [130] c) The basic structure of ML 2D material-based BG-FET. [138] d) A basic structure of ML 2D DG-MOSFET with extended source and drain regions. [128] e) A basic schematic view of ML 2D DG-MOSFETs with ULs.…”

Section: Yoon Et Al In 2011 Incorporated the Performance Limit Of Mosmentioning

confidence: 99%

Sub‐5 nm 2D Semiconductor‐Based Monolayer Field‐Effect Transistor: Status and Prospects

Meena

Sharma

Jogi

2023

Physica Status Solidi (a)

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The objectives of the semiconductor industry include scaling down the silicon (Si)-based devices from bulk to nanoscale, reducing the effective cost, and improving the performance of the device. [1] Semiconductor devices such as metal-oxide semiconductor field-effect transistors (MOSFETs), field-effect transistors (FETs), complementary metal oxide semiconductor (CMOS) transistors, and other semiconductor devices with different architectures and scaling properties have been analyzed according to the guidelines of International Technology Roadmap for Semiconductors (ITRS), International Roadmap for Devices and Systems (IRDS), and Nano Electronics Roadmap for Europe: Identification and Dissemination (NEREID). Moore's law, followed for subsequent scaling down of MOSFETs, FETs, and CMOS devices using 3D semiconductors (Si, gallium nitride, and gallium arsenide), has become irrelevant in the nanoregime. [2,3] Challenges such as device degradation due to short channel effects, leakage current leading to mobility degradation, and heat dissipation issues or "heat death" of conventional 3D semiconductor-based nanodimensional CMOS devices and electronic circuits are faced due to dangling bonds, surface scattering states, undesirable coupling with phonons, creation of interface states, manifestation of the leakage current, static power problem, and large subthreshold swing (SS). [4][5][6] Search for alternate channel materials has been trending in the 2D semiconductor research in order to meet the above mentioned challenges.Richard Feynman, in 1959, introduced researchers to the concept of nanodimensions (<100 nm) and nanotechnology. The semiconductor industry has come a long way since then with newly engineered nanostructures such as carbon nanotubes (CNT), quantum dots, quantum wires, and nanofibers that have led to great advancements in nanotechnology with applications in biomedicine, pharmaceuticals, cosmetics, and environmental issues. [7] Nanomaterials are usually classified into four types based on quantum confinement and the device dimensions, at least one of which is in the nanorange (from 1 to 100 nm). Different types of nanomaterials are represented in Figure 1 and are described as follows. 1) 3D nanomaterials: The nanomaterials for which all three dimensions lie outside the nanometric scale (1-100 nm) are termed as 3D materials. The electrons are free to move in all three directions and thus there is no confinement or limitation for the flow of charge carriers. The bulk 3D nanomaterials consist of bundles of nanowires, nanotubes, bulk powders, or nanoparticles and multiple nanolayers or polycrystals. 2) 2D nanomaterials. The 2D nanomaterials have only one dimension in the nanometric scale whereas the other two dimensions lie outside the nanoscale (1-100 nm). These are similar to a planar structure. The electrons can easily move in two directions and are confined in one direction, for example, nano thin films, nanocoatings, nanolayers, nanosheets, etc. for 2D quantum well systems. 3) 1D nanomaterials: These nanoma...

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Section: Yoon Et Al In 2011 Incorporated the Performance Limit Of Mosmentioning

confidence: 99%

Sub‐5 nm 2D Semiconductor‐Based Monolayer Field‐Effect Transistor: Status and Prospects

Meena

Sharma

Jogi

2023

Physica Status Solidi (a)

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“…The study revealed that the compatibility of Gr and ReS 2 is due to their excellent electronic properties. [ 207 ] Mukherjee et al. produced ReS 2 /p‐Si heterojunction photodiodes to establish the balance between speed and responsivity.…”

Section: The Properties Of Rmcsmentioning

confidence: 99%

“…The study revealed that the compatibility of Gr and ReS 2 is due to their excellent electronic properties. [207] Mukherjee et al produced ReS 2 /p-Si heterojunction photodiodes to establish the balance between speed and responsivity. The study achieved its purpose and photoresponsivity and quantum efficiency values were found at ≈33.47 A W −1 and 9808% in the high-speed operation of 120 µs at the 3 V, respectively.…”

Section: Electrical and Optical Properties Of Rmcsmentioning

confidence: 99%

Refractory‐Metal‐Based Chalcogenides for Energy

Özel

Arkan

Coskun

et al. 2022

Adv Funct Materials

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When it is asked, “where can refractory metals be used?,” the possible shortest answer is, “where cannot they be used?” The uses of refractory‐metal‐based compounds in research and industry are too many to be enumerated; nevertheless, some outstanding examples are briefly mentioned here. Essentially, chalcogenide forms of refractory metals are preferred in the fabrication of high‐performance structures. Therefore, expanding the current studies that usually focus on tungsten‐ and molybdenum‐based structures to other materials may open new opportunities. Moreover, research on ternary and quaternary structures can also be a keystone in creating high‐performance products. The rationale of the present review is to give a brief overview of the recent history of refractory‐metal‐based chalcogenides (RMCs). Initially, the framework is confined to the general design and approaches for the synthesis of refractory metal chalcogenides. The assay is continued by extending with characteristic features of materials from crystalline properties to thermoelectric attributes and examining device fabrication processes. Taken together, the device fabrication part where RMCs are mainly used is extensively focused upon. Finally, outlook and future perspectives are given on the design and construction of RMCs to enable future inspiration and innovation.

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“…Given the linear energy dispersion relation near the Dirac point, graphene's Fermi level can be adjusted by an external electric field, allowing the modulation of Schottky barrier height at 2D channel/graphene heterointerfaces. Other vertical all-2D FETs, such as h-BN/Gr-MoS 2 -Gr/h-BN [14], h-BN/Gr-WSe 2 -Gr/h-BN [56], and Gr-ReSe 2 -Gr [17], have also shown similar advantages of using graphene electrodes. In addition, Zhang's group fabricated vertical all-2D vdW FETs with an ultra-short channel width of 4 nm [57].…”

Section: Vertically Graphene Contacted All-2d Fetsmentioning

confidence: 99%

“…Many strategies have been adopted to decrease contact resistance, such as using metal electrodes with suitable work functions, post-annealing treatment, or phase engineering [13][14][15][16]. Besides, using graphene electrode instead of traditional metal electrodes is an effective way to reduce interface contact resistance, and even form ohmic contacts at 2D channels/graphene interfaces by tuning graphene's Fermi level through external gate voltages or elements doping [17]. It also further inspired the investigation of high-performance devices based on all-2D heterostructures, which are completely made of 2D material for all components, including 2D semiconducting channel, 2D graphene electrode, and/nor 2D h-BN dielectric layer.…”

Section: Introductionmentioning

confidence: 99%

Thin-film electronics based on all-2D van der Waals heterostructures

Liu

Yang

Sang

et al. 2021

Journal of Information Display

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Two-dimensional (2D) layered materials including metal, semiconductor, and insulator have received extensive attention in recent years. The weak van-der-Waals (vdW) interactions between 2D materials layers enable them to isolate monolayers and restack into artificial 2D vdW heterostructures in the desired sequence. These assembled all-2D vdW heterostructures are promising platforms for fabricating next-generation electronics as well as optoelectronics. In particular, the all-2D vdW heterostructure devices composed entirely of 2D layered material have received extensive attention due to their natural thickness, atomically sharp heterointerfaces, and excellent mechanical flexibility. Herein, we firstly introduce 2D vdW heterostructures and their preparation methods. Secondly, the recent progress of field-effect transistors (FETs) and photodetectors based on all-2D vdW heterostructures are summarized. Finally, we discuss some challenges of all-2D vdW heterostructure-based devices for practical applications and offer personal perspectives toward the future development of thin-film electronics.

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Monolayer-ReS2 field effect transistor using monolayer-graphene as electrodes

Cited by 6 publications

References 30 publications

Sub‐5 nm 2D Semiconductor‐Based Monolayer Field‐Effect Transistor: Status and Prospects

Sub‐5 nm 2D Semiconductor‐Based Monolayer Field‐Effect Transistor: Status and Prospects

Refractory‐Metal‐Based Chalcogenides for Energy

Thin-film electronics based on all-2D van der Waals heterostructures

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