Monograin materials for solar cells

Mellikov, E.; Meißner, D.; Varema, T.; Altosaar, M.; Kauk, M.; Volobujeva, Olga; Raudoja, J.; Timmo, K.; Danilson, Mati

doi:10.1016/j.solmat.2008.04.018

Cited by 42 publications

(16 citation statements)

References 8 publications

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“…This potential has nurtured significant researcher focus on not only the preparation of higher performance CZTSSe devices with traditional vacuum-deposition approaches such as sputtering [30][31][32][33][34][35][36][37][38][39][40][41] and co-evaporation [42][43][44][45][46][47][48][49][50][51][52], but also experimentation with a large array of alternative fabrication approaches, targeting lower processing cost and higher throughput. Some of these alternative methods include spray pyrolysis [53][54][55][56], electrodeposition [57][58][59][60][61][62][63][64][65][66][67], photochemical deposition [68,69], 'monograin' deposition [70,71] and direct liquid-coating techniques, including pure solution [72][73][74][75]…”

Section: Copper-zinc-tin-sulfide-selenide Materials and Deposition Apmentioning

confidence: 99%

Prospects and performance limitations for Cu–Zn–Sn–S–Se photovoltaic technology

Mitzi

Gunawan

Todorov

et al. 2013

Phil. Trans. R. Soc. A.

175

131

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While cadmium telluride and copper-indiumgallium-sulfide-selenide (CIGSSe) solar cells have either already surpassed (for CdTe) or reached (for CIGSSe) the 1 GW yr −1 production level, highlighting the promise of these rapidly growing thin-film technologies, reliance on the heavy metal cadmium and scarce elements indium and tellurium has prompted concern about scalability towards the terawatt level. Despite recent advances in structurally related copper-zinc-tin-sulfide-selenide (CZTSSe) absorbers, in which indium from CIGSSe is replaced with more plentiful and lower cost zinc and tin, there is still a sizeable performance gap between the kesterite CZTSSe and the more mature CdTe and CIGSSe technologies. This review will discuss recent progress in the CZTSSe field, especially focusing on a direct comparison with analogous higher performing CIGSSe to probe the performance bottlenecks in Earth-abundant kesterite devices. Key limitations in the current generation of CZTSSe devices include a shortfall in open circuit voltage relative to the absorber band gap and secondarily a high series resistance, which contributes to a lower device fill factor. Understanding and addressing these performance issues should yield closer performance parity between CZTSSe and CdTe/CIGSSe absorbers and hopefully facilitate a successful launch of commercialization for the kesterite-based technology.

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Section: Copper-zinc-tin-sulfide-selenide Materials and Deposition Apmentioning

confidence: 99%

Prospects and performance limitations for Cu–Zn–Sn–S–Se photovoltaic technology

Mitzi

Gunawan

Todorov

et al. 2013

Phil. Trans. R. Soc. A.

175

131

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“…Other groups tried reactive sputtering and pulsed laser deposition (PLD) (see Tab. 2). The method of Tallinn University also introduces a huge difference in cell architecture, where 50 µm CZTS monograins are synthesized in molten KI, wrapped in the buffer layer and attached to the substrate by epoxy glue [76].…”

Section: Synthesis Strategies 41 One-step or Two Step Processes For mentioning

confidence: 99%

Kësterite thin films for photovoltaics : a review

2012

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In the years to come, electricity production is bound to increase, and Cu2ZnSn(S, Se)4 (CZTS) compounds, due to their suitability to thin-film solar cells, could be a means to fulfill the demand. After explaining the reasons of the sudden interest of the CIGS scientific community for CZTS solar cells, this paper reviews recent papers published on the subject of kësterites-based solar cells. After a description of crystallographic and optoelectronic properties, including CZTS crystalline structure, defect formation and metal composition, this review paper focuses on CZTS synthesis processes and device properties. Synthesis strategies, including one-or two-step processes, deposition temperature, binary formation control via atmosphere control and their effect on device properties are discussed.

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“…With the exception of some innovative examples, where pre-crystallized monograin powders are directly embedded in the device structure, [48,49] the formation routes of all device-quality absorber layer films have met the following conditions: 1) The constituent elements are delivered to the substrate by vacuum or atmospheric pressure techniques. Regardless of the nature of the technique, a high degree of compositional and thickness uniformity must be achieved in order to obtain satisfactory large-area modules and devices.…”

Section: Absorber Layer Deposition Methodsmentioning

confidence: 99%

Direct Liquid Coating of Chalcopyrite Light‐Absorbing Layers for Photovoltaic Devices

Todorov¹,

Mitzi²

2009

Eur J Inorg Chem

222

160

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Liquid deposition approaches for chalcopyrite films used in thin-film photovoltaic devices are reviewed. Most of the targeted materials are based on Cu-In or Cu-In-Ga sulfides and selenides (i.e., CIS or CIGS, respectively), although recently related alternative materials based on abundant and nontoxic elements such as the kesterite Cu 2 ZnSnS 4 have been actively investigated. By direct liquid coating we refer collectively to a variety of techniques characterized by distributing a liquid or a paste to the surface of a substrate, followed by necessary thermal/chemical treatments to achieve the desired phase. The deposition media used are solutions or particle (usually submicrometer size) suspensions of metal oxide, organic and inorganic compounds, including metal chalcogenide species. The deposition techniques used are mainly printing and spin-coating, although any standard process such as

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Monograin materials for solar cells

Cited by 42 publications

References 8 publications

Prospects and performance limitations for Cu–Zn–Sn–S–Se photovoltaic technology

Prospects and performance limitations for Cu–Zn–Sn–S–Se photovoltaic technology

Kësterite thin films for photovoltaics : a review

Direct Liquid Coating of Chalcopyrite Light‐Absorbing Layers for Photovoltaic Devices

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