“…Recently we have developed gas sensors for the determination of oxygen, fluorine or hydrogen fluoride using a structure Pt/LaF 3 /Si [8 to 12]. This fluorine sensor has been proven to be very stable and advantageous concerning a very steep capacitance-voltage (C±V) curve, but the stability of this sensor depends on the properties of the three-phase boundary formed by gas, platinum and lanthanum trifluoride [10,11]. Therefore on one hand, the influence of fluorine on the Pt/LaF 3 /Si structure is very important because it leads to a change of the electrochemical potential in such structures and, on the other hand, this is of interest because of its importance in understanding the fundamentals of gas-surface interactions and, especially, because of its direct relevance to etching of platinum.…”