Molecular Bridge on Buried Interface for Efficient and Stable Perovskite Solar Cells

Abstract

The interface of perovskite solar cells (PSCs) is significantly important for charge transfer and device stability, while the buried interface with the impact on perovskite film growth has been paid less attention. Herein, we use a molecular modifier, glycocyamine (GDA) to build a molecular bridge on the buried interface of SnO2/perovskite, resulting in superior interfacial contact. This is achieved through the strongly interaction between GDA and SnO2, which also appreciably modulates the energy level. Moreover, GDA can regulate the perovskite crystal growth, yielding perovskite film with enlarged grain size and absence of pinholes, exhibiting substantially reduced defect density. Consequently, PSCs with GDA modification demonstrate significant improvement of open circuit voltage (close to 1.2 V) and fill factor, leading to an improved power conversion efficiency from 22.60 % to 24.70 %. Additionally, stabilities of GDA devices under maximum power point and 85 °C heat both perform better than the control devices.

Improved Air Stability for High-Performance FACsPbI3 Perovskite Solar Cells via Bonding Engineering

“…The calculated α value increases from 0.981 to 0.991 after the introduction of PT, signifying that the bimolecular recombination is significantly reduced (Figure S8). The relationship of V oc versus logarithmic light intensity is also evaluated, and the result is shown in Figure a. It can be well-fitted using eq V normalO normalC = n ( k normalB T ) ln ( I ) q + B where n is the ideality factor, k B is the Boltzmann constant, T is the absolute temperature, and B is the constant. , The fitting slope decreases from 1.56 k B T / q for the control device to 1.34 k B T / q for the PT-modified device, indicating a suppressed nonradiative recombination process, which is consistent with the SCLC and PL results.…”

Preparation of Low-Defect Aluminum-Doped Zinc Oxide Nanostructure-Based Compact Layer by Vacuum Ultraviolet Irradiation for Quantum Dot-Sensitized Solar Cells

“…Quantum dot-sensitized solar cells (QDSSCs) have become one hot spot of solar cells due to their advantages of high theoretical photoelectric conversion efficiency (44%), simple manufacturing process, and low cost . At present, the highest efficiency of QDSSCs is 16.10%, which has a large room for improvement compared with the highest efficiency of 26.1% for PSCs, one of the current third-generation solar cells. − The critical factor restricting the improvement of photoelectric conversion efficiency of QDSSCs is the nonradiative recombination of photogenerated electrons and holes at interfaces . This is because the electrolyte usually penetrates through the mesoporous TiO 2 thin film and directly contacts with FTO, resulting in the recombination of photogenerated electrons and holes at the interface of FTO/mesoporous TiO 2 to generate leakage current .…”

Small molecule-incorporated SnO2 layer for efficient perovskite solar cells

“…At present, pre-burying additives into the bottom electron transport layer has been extensively designed. For example, it has been proven that organic salts, polyamine molecules, 28 and quantum dots 29,30 will passivate interfacial defects, 31 regulate the energy level alignment, 32 and induce perovskite crystallization. 33 Zhang et al adopted a cesium formate (CsFo) additive that was pre-buried into SnO 2 , where HCOO À ions passivated defects around the preburied interface.…”