Modelling of gate-induced spin precession in a striped channel high electron mobility transistor

Bournel, A.; Dollfus, Philippe; Galdin, S.; Musalem, F.-X.; Hesto, P.

doi:10.1016/s0038-1098(97)00278-0

Cited by 29 publications

(15 citation statements)

References 17 publications

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“…After the injection, electrons start traveling in the QW subjected to scatterings, spin-orbit interactions, applied electric field and the space-charge electric field described by the Poisson equation. The Monte Carlo scheme has been used in several studies of the spin-polarized transport influenced by spin-orbit interaction [28,37,38,39]. We use an ensemble Monte Carlo approach developed previously for spin-polarized transport in low dimensional semiconductor affected by spin-orbit interaction [28].…”

Section: Spin-polarized Transport In the Quantum Wellmentioning

confidence: 99%

Monte Carlo modeling of spin injection through a Schottky barrier and spin transport in a semiconductor quantum well

Shen

Saikin

Cheng

2004

Journal of Applied Physics

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We develop a Monte Carlo model to study injection of spin-polarized electrons through a Schottky barrier from a ferromagnetic metal contact into a non-magnetic low-dimensional semiconductor structure. Both mechanisms of thermionic emission and tunneling injection are included in the model. Due to the barrier shape, the injected electrons are non-thermalized. Spin dynamics in the semiconductor heterostructure is controlled by the Rashba and Dresselhaus spinorbit interactions and described by a single electron spin density matrix formalism. In addition to the linear term, the third order term in momentum for the Dresselhaus interaction is included.Effect of the Schottky potential on the spin dynamics in a 2 dimensional semiconductor device channel is studied. It is found that the injected current can maintain substantial spin polarization to a length scale in the order of 1 micrometer at room temperature without external magnetic fields. 72.25Dc, 72.25.Hg, 72.25Rb, 2 PACS:

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Section: Spin-polarized Transport In the Quantum Wellmentioning

confidence: 99%

Monte Carlo modeling of spin injection through a Schottky barrier and spin transport in a semiconductor quantum well

Shen

Saikin

Cheng

2004

Journal of Applied Physics

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“…In fact, even though elastic scattering is suppressed in quasi one-dimensional structures [14], inelastic scattering is not [15], and the calculated mobility in one-dimensional structures in this temperature range is less than that in bulk [16]. The true origin of the difference lies in the fact that Dresselhaus and Rashba interactions cause a carrier's spin to precess slowly (during free flight) about a so-called "spin precession vector" that is defined by the carrier's momentum [11]. In a one-dimensional structure, a carrier is free to move only along one direction, and therefore the Rashba or the Dresselhaus spin precession vector always points along one particular direction.…”

mentioning

confidence: 92%

Decay of spin-polarized hot carrier current in a quasi-one-dimensional spin-valve structure

Pramanik

Bandyopadhyay

Cahay

2004

Applied Physics Letters

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We study the spatial decay of spin polarized hot carrier current in a spin-valve structure consisting of a semiconductor quantum wire flanked by half-metallic ferromagnetic contacts. The current decays because of D'yakonov-Perel' spin relaxation in the semiconductor caused by Rashba spin orbit interaction. The associated relaxation length is found to decrease with increasing lattice temperature (in the range 30-77 K) and exhibit a non-monotonic dependence on the electric field driving the current. The relaxation lengths are several tens of microns which are at least an order of magnitude larger than what has been theoretically calculated for two-dimensional structures at comparable temperatures, Rashba interaction strengths and electric fields. This improvement is a consequence of one-dimensional carrier confinement that does not necessarily suppress carrier scattering, but nevertheless suppresses D'yakonov-Perel'

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“…The spin dephasing occurs because electrons feel an effective magnetic field due to the spin-orbit interaction that changes randomly every time when an electron undergoes a scattering event. Temporal evolution of spin is given by following equation [27] …”

Section: Scattering Through Ripplesmentioning

confidence: 99%

“…During the free-flight period, the spin of an individual electron precess around an effective magnetic field is obtained from the spin-orbit Hamiltonian. The magnitude of the ensemble averaged spin vector |hSi| is computed from the expression given by [27] …”

Section: Scattering Through Ripplesmentioning

confidence: 99%

Effect of microscopic ripples on spin relaxation length in single-layer graphene

2014

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Modelling of gate-induced spin precession in a striped channel high electron mobility transistor

Cited by 29 publications

References 17 publications

Monte Carlo modeling of spin injection through a Schottky barrier and spin transport in a semiconductor quantum well

Monte Carlo modeling of spin injection through a Schottky barrier and spin transport in a semiconductor quantum well

Decay of spin-polarized hot carrier current in a quasi-one-dimensional spin-valve structure

Effect of microscopic ripples on spin relaxation length in single-layer graphene

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