Modelling electrochemical current and potential oscillations at the Si electrode

Ellipsomicroscopic studies of the anodic oxidation of p-type silicon in fluoride containing electrolytes during current oscillations

“…In recent literature, the occurrence of macroscopic current oscillations during silicon electrodissolution was attributed to a mechanism that gives rise to oscillations on a nanoscopic scale, so-called local oscillators, and a mechanism which synchronizes the local oscillators to behave like one giant macroscopic oscillator [19,11,[20][21][22][23][24][25]. On the one hand, damped oscillations, which are typically found after small voltage steps from ocp to a few volts when the ohmic resistance in series to the working electrode can be neglected or is small, are believed to be the signature of local oscillators with slightly different frequencies.…”

“…Föll and coworkers [22][23][24] discuss a very detailed microscopic model of the oscillations, coined current burst model (CBM), with a different origin of synchronization and desynchronization. In their view, current flow occurs in current bursts which are the result of an electric (ionic) breakthrough through the insulating oxide layer.…”

FFT impedance spectroscopy analysis of the growth of anodic oxides on (100) p-Si for various solvents

“…The CBM is strongly based on anodic oxide growth in a nanoscopic and stochastic context; its basic equations can therefore be applied to this work as well. There are two basic assumptions within the CBM that shall be outlined here in a somewhat simplified form, for details refer to the review given in [32].…”

Stress induced one‐dimensional model for current oscillations at the Si/electrolyte contact

“…[4] advocates that the volume difference between silicon and its oxide introduces defects and leads to (nano) pores in the structure. Later, stress has been measured during oscillations [5], two types of oxide [6] were detected and current bursts [7,8] were considered. In [9][10][11][12] the mentioned phenomena are unified in a morphological model for current oscillations at the silicon electrolyte contact.…”