Modelling and Analysis of EMI Generated of Power IGBT Modules

Abstract

Commutations of power IGBT modules used in power converters cause high voltage and current gradients in the collector waveforms, which can generate and irradiate very high electromagnetic noise levels. An innovative experimental-simulative method is presented, which is able to predict irradiated noise levels during converter operation: such method allows power electronics designer to have a proper and simple method to predict spectrum and amplitude of irradiated noise during converter operation, in order to ensure a direct compliance with the enforce normative. The irradiated noise is generated by high frequency conducted current flowing in IGBT module and in the converter. Frequency and amplitude of the internal oscillating currents are simulated by means of a suitable IGBT module model proposed in the past and now optimized for irradiation simulation. The irradiated field during converter operation can be calculated by means of a preliminary static measure executed in anechoic chamber, where the diagram of irradiation of the system is measured at different frequencies, connecting IGBT gate to a radiofrequency generator. Presented results are precise within 3dB limit.

Wideband shielding effectiveness of laminated sheet using copper and magnetic materials

“…Recently, switching frequencies of power semiconductors in the equipment have been increasing for the higher power conversion efficiency. Accordingly, the switching devices radiate high frequency and wideband noise whose levels are so high [2,3]. The semiconductors such as insulated gate bipolar transistor (IGBT) and metal-oxide-semiconductor field-effect transistor (MOSFET) operate in low frequency (LF: 30-300 kHz) band, and the noise frequencies are up to high frequency (HF: 3-30 MHz) band.…”