Modeling Valance Change Memristor Device: Oxide Thickness, Material Type, and Temperature Effects

Abunahla, Heba; Mohammad, Baker; Homouz, Dirar; O’Kelly, Curtis J.

doi:10.1109/tcsi.2016.2622225

Cited by 27 publications

(19 citation statements)

References 46 publications

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“…The previous results support the existing model that attributes resistive switching in laser-reduced GO to the non-uniformity in the number and location of functional groups that create nanometric-size regions of different conductance [18]. The sp 2 regions present high-conductivity but they are interrupted by low-conductivity sp 3 domains at a nanoscale level that are responsible for a low current flow [30,31]. At certain locations within the structure, under the action of the voltage bias in the HRS, large electrostatic potential gradients are created in the nanometric-size low-conductivity regions, resulting in large localized electric fields.…”

Section: Numerical Analysis Of Charge Conduction and Resistive Swisupporting

confidence: 81%

Resistive Switching and Charge Transport in Laser-Fabricated Graphene Oxide Memristors: A Time Series and Quantum Point Contact Modeling Approach

et al. 2019

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This work investigates the sources of resistive switching (RS) in recently reported laser-fabricated graphene oxide memristors by means of two numerical analysis tools linked to the Time Series Statistical Analysis and the use of the Quantum Point Contact Conduction model. The application of both numerical procedures points to the existence of a filament connecting the electrodes that may be interrupted at a precise point within the conductive path, resulting in resistive switching phenomena. These results support the existing model attributing the memristance of laser-fabricated graphene oxide memristors to the modification of a conductive path stoichiometry inside the graphene oxide.

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Section: Numerical Analysis Of Charge Conduction and Resistive Swisupporting

confidence: 81%

Resistive Switching and Charge Transport in Laser-Fabricated Graphene Oxide Memristors: A Time Series and Quantum Point Contact Modeling Approach

et al. 2019

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“…The other model to explain the resistive switching in GO films proposes that the conductive path is caused by transforming insulating sp 3 domains to conducting sp 2 bonds (oxygen vacancies) based on the detachment of oxygen groups under the action of the electric field [49,52]. Several works based on first principles and statistical calculations [53,54] have demonstrated the tendency of the oxygen functionalities to agglomerate and form highly oxidized domains surrounded by areas of pristine graphene.…”

Section: Discussionmentioning

confidence: 99%

Laser-Fabricated Reduced Graphene Oxide Memristors

et al. 2019

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Finding an inexpensive and scalable method for the mass production of memristors will be one of the key aspects for their implementation in end-user computing applications. Herein, we report pioneering research on the fabrication of laser-lithographed graphene oxide memristors. The devices have been surface-fabricated through a graphene oxide coating on a polyethylene terephthalate substrate followed by a localized laser-assisted photo-thermal partial reduction. When the laser fluence is appropriately tuned during the fabrication process, the devices present a characteristic pinched closed-loop in the current-voltage relation revealing the unique fingerprint of the memristive hysteresis. Combined structural and electrical experiments have been conducted to characterize the raw material and the devices that aim to establish a path for optimization. Electrical measurements have demonstrated a clear distinction between the resistive states, as well as stable memory performance, indicating the potential of laser-fabricated graphene oxide memristors in resistive switching applications.

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“…It can be observed that the filter with the integrated resistive gap can have ideal behavior if the gap size is ≥ 200 µm. However, it is challenging to operate a RRAM device with such gap (the distance between the two electrodes) size as the generated electric field will not be sufficient to switch the state of the device, taking into account the planar structure of the device 41 – 44 . The gap of RRAM devices reported in the literature ranges from nm to submicrons 39 .…”

Section: Resultsmentioning

confidence: 99%

Integrated graphene oxide resistive element in tunable RF filters

Abunahla

Gadhafi

Mohammad

et al. 2020

Sci Rep

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Adaptable communication systems are of great interest as they provide dynamic front end to accommodate the tunable spectrum management in advanced wireless systems. Memristor (acronym of memory resistor) is an emerging technology part of resistive RAM (RRAM) that has good potential for application in reconfigurable RF devices. The potentiality of using resistive switches for frequency tuning of high frequency RF filters is successfully explored in this article for the first time. Tunable RF filter is designed with detailed simulation using Ansys HFSS, and then correlated with measured results from experiment. As a proof of concept, a prototype of the tunable RF filter is fabricated by using a graphene oxide (GO) integrated with a conventional microstrip open stub notch filter. The resistor switching ability of the device is exploited for the frequency tuning. The resonating length of the notch filter is varied by changing the resistance of the active GO material between ‘HIGH’ (OFF) and ‘LOW’ (ON) resistance states. The measured results demonstrate the great potential of using RRAM in tunable RF devices. It also proves the possibility of tuning RF devices without any localized surface mount device (SMD) element or complex realization technique.

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Modeling Valance Change Memristor Device: Oxide Thickness, Material Type, and Temperature Effects

Cited by 27 publications

References 46 publications

Resistive Switching and Charge Transport in Laser-Fabricated Graphene Oxide Memristors: A Time Series and Quantum Point Contact Modeling Approach

Resistive Switching and Charge Transport in Laser-Fabricated Graphene Oxide Memristors: A Time Series and Quantum Point Contact Modeling Approach

Laser-Fabricated Reduced Graphene Oxide Memristors

Integrated graphene oxide resistive element in tunable RF filters

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