Modeling of Wide Bandgap Power Semiconductor Devices—Part I

Mantooth, H. Alan; Peng, Kang; Santi, Enrico; Hudgins, J.L.

doi:10.1109/ted.2014.2368274

Cited by 164 publications

(75 citation statements)

References 54 publications

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“…One of the keys to being able to realize accurate simulations of SiC circuits is accurate semiconductor device models. This is true for the power electronic circuit analysis [37], [38] as well as the low-voltage circuitry.…”

Section: Semiconductor Device Modelingmentioning

confidence: 95%

Emerging Trends in Silicon Carbide Power Electronics Design

Mantooth¹

2017

CPSS TPEA

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Abstract-The emergence of wide bandgap power semiconductor devices has opened the possibilities of improved electrical performance and power density. Advanced research into wide bandgap power electronics also includes advances in integrated circuit design, semiconductor device modeling, 3D electronic packaging, and computer-aided design of wide bandgap based electronics. These emerging trends are described along with some early results indicating the additional improvements possible in power density. Operation at extreme temperatures also becomes more feasible.Index Terms-Gallium nitride, power integrated circuits, power semiconductor devices, power electronics, silicon carbide, wide bandgap semiconductors.

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Section: Semiconductor Device Modelingmentioning

confidence: 95%

Emerging Trends in Silicon Carbide Power Electronics Design

Mantooth¹

2017

CPSS TPEA

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“…Under HSF condition, U ds approaches to the DC bus voltage, and the diode is reversely cut-off, then U CDESAT will not follow the Equation (10). After the blanking time T BLANK , U CDESAT reaches to U DESAT , the protection circuit will turn off the SiC MOSFET.…”

Section: Clamping the Gate-source Voltagementioning

confidence: 99%

“…Another drawback is that Si devices cannot operate at high-temperature conditions due to insufficient thermal capability, resulting in additional radiators with the increase of both volume and weight. Due to the low on-state resistance, high switching speed [8] and excellent thermal conductor of silicon carbide (SiC) devices [9][10][11], SiC-based SSCBs are expected to be widely employed in future DC power system to achieve high power density and to withstand the high-temperature environment.…”

Section: Introductionmentioning

confidence: 99%

A Digital-Controlled SiC-Based Solid State Circuit Breaker with Soft Switch-Off Method for DC Power System

Qin

Xun

et al. 2019

Electronics

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Due to the lower on-state resistance, direct current (DC) solid state circuit breakers (SSCBs) based on silicon-carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) can reduce on-state losses and the investment of the cooling system when compared to breakers based on silicon (Si) MOSFETs. However, SiC MOSFETs, with smaller die area and higher current density, lead to weaker short-circuit ability, shorter short-circuit withstand time and higher protection requirements. To improve the reliability and short-circuit capability of SiC-based DC solid state circuit breakers, the short-circuit fault mechanisms of Si MOSFETs and SiC MOSFETs are revealed. Combined with the desaturation detection (DESAT), a “soft turn-off” short-circuit protection method based on source parasitic inductor is proposed. When the DESAT protection is activated, the “soft turn-off” method can protect the MOSFET against short-circuit and overcurrent. The proposed SSCB, combined with the flexibility of the DSP, has the μs-scale ultrafast response time to overcurrent detection. Finally, the effectiveness of the proposed method is validated by the experimental platform. The method can reduce the voltage stress of the power device, and it can also suppress the short-circuit current.

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“…Therefore, an accurate model of SiC MOSFET is necessary for device evaluation, system design, and power converter behavior prediction. Mantooth et al, reviewed different compact models of SiC MOSFET developed by many research groups [10]. The categorization and characteristics of different modeling methods on power semiconductor devices were also reported in this literature.…”

Section: Introductionmentioning

confidence: 99%

SPICE Modeling of SiC MOSFET Considering Interface-Trap Influence

et al. 2018

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SPICE modeling of silicon carbide (SiC) MOSFET considering the influence of interface traps has been carried out, which is able to describe the characteristics of the MOS transistors in all operation modes at different interface trap densities and measurement temperatures. This modeling employs the SPICE level-1 model of MOSFET, but the constant mobility in the piecewise current equations has been replaced by the advanced mobility expression, which can exactly reflect the effect of SiC/SiO 2 interface traps on the electrical characteristics of SiC MOSFET. Key parameters in the advanced mobility model are obtained according to charge-sheet model (CSM) of MOS system. The static characteristics of the developed SiC MOSFET model have been validated with the production Datasheet, and the dynamic characteristics have been experimentally verified in Boost converter. Based on the developed model, the effect of SiC/SiO 2 interface-trap densities on the switching performances of SiC MOSFET has been quantitatively discussed, and reasonable gate driving voltage of SiC MOSFET with different interface-trap densities has been revealed.

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Modeling of Wide Bandgap Power Semiconductor Devices—Part I

Cited by 164 publications

References 54 publications

Emerging Trends in Silicon Carbide Power Electronics Design

Emerging Trends in Silicon Carbide Power Electronics Design

A Digital-Controlled SiC-Based Solid State Circuit Breaker with Soft Switch-Off Method for DC Power System

SPICE Modeling of SiC MOSFET Considering Interface-Trap Influence

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