DOI: 10.1109/itec-ap.2014.6941012
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Yang Cao, Liqiang Yuan, Kainan Chen, Zhengming Zhao, Ting Lu, Fanbo He

Abstract: New power semiconductor devices, such as SiC MOSFET, have widely fascinated people in recent years. They are playing more and more important roles in modern power electronic converters. Most of current SiC MOSFET models are implemented in simple simulator, such as PSPICE, and have problems in some applications, for example, the accuracy of these models can not satisfy the demand with the increasing of main circuit complexity. A novel model of SiC MOSFET implemented in Matlab/Simulink is proposed in this paper…

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