2007
DOI: 10.1103/physrevb.75.035109
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Modeling ofCeO2,Ce2O3, and

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Cited by 351 publications
(254 citation statements)
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“…For the oxygen vacancy, the excess electrons are localized on individual Ce atoms, turning two Ce 4+ into two Ce 3+ species, which, by Coulomb attraction, sit near to the vacancy [29][30][31][32][33][34][35][36][37][38][39][40][41][42]. The results of DFT+U studies are largely dependent on the U value, bringing some uncertainty to the results and raising questions on what value of U should be used to describe the properties of perfect and reduced CeO 2 .…”
Section: Introductionmentioning
confidence: 99%
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“…For the oxygen vacancy, the excess electrons are localized on individual Ce atoms, turning two Ce 4+ into two Ce 3+ species, which, by Coulomb attraction, sit near to the vacancy [29][30][31][32][33][34][35][36][37][38][39][40][41][42]. The results of DFT+U studies are largely dependent on the U value, bringing some uncertainty to the results and raising questions on what value of U should be used to describe the properties of perfect and reduced CeO 2 .…”
Section: Introductionmentioning
confidence: 99%
“…The DFT+U method has also been employed to study the electronic properties of CeO 2 and the impact of oxygen vacancies [29,30,[33][34][35][36][37][38][39][40][41][42]. In this approach, an extra on-site Coulomb interaction is added to the Ce 4f states, leading to a split between occupied and unoccupied states.…”
Section: Introductionmentioning
confidence: 99%
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