Modeling and simulation of an active restoring mechanism for high reliability switches in RF-MEMS technology

Kuenzig, T.; Schrag, G.; Iannacci, Jacopo

doi:10.1016/j.microrel.2012.06.137

Cited by 6 publications

(5 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The amount of heat flowing into the switch and therewith the achieved temperature rise strongly depends on the detailed design of the micro-heater and the surrounding oxide layers it is buried in. The impact of these geometrical features can be investigated and, hence, optimized applying the derived model, which is described explicitly in [6]. As a second fundamental result, forces acting on potentially welded contacts can be calculated.…”

Section: Resultsmentioning

confidence: 99%

“…Exemplary results of these investigations and their interpretations, which are new compared to [6] are presented in the following. 9 shows a plot of the contact forces (circles) versus voltage applied to the micro-heater.…”

Section: Resultsmentioning

confidence: 99%

“…This means, in return, that optimization of the exerted forces can be achieved by increasing the temperature at the hot anchor, which increases also the temperature inside the gold bridge. Ways to optimize the heat propagation aiming at maximizing the temperature and therewith the efficiency of the recovery capability have been already discussed in [6].…”

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Analysis of RF-MEMS switches in failure mode: Towards a more robust design

Kuenzig¹,

Muschol²,

Iannacci

et al. 2014

2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and

View full text Add to dashboard Cite

We present comprehensive theoretical and experimental investigations on one of the most relevant failure mechanisms in RF-MEMS switches, namely electrically induced stiction. In particular, we analyze an RF-MEMS switch equipped with an embedded active thermal recovery appliance by deriving and applying a 3D, problem-adapted, coupled finite element (FE) model including all relevant mechanical, electrical, thermal, and fluidic effects. The accuracy and predictive power of the simulations is ensured by a dedicated calibration procedure based on highly accurate characterization techniques such as white light interferometry and laser Doppler vibrometry. Applying the calibrated model, we studied the switch operation during failure and recovery in all details and identified the most important design parameters affecting its reliability with a view to improving the recovery capability as well as optimizing the overall performance towards a more robust switch design.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Analysis of RF-MEMS switches in failure mode: Towards a more robust design

Kuenzig¹,

Muschol²,

Iannacci

et al. 2014

2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and

View full text Add to dashboard Cite

show abstract

“…In this section, we report on the electromechanical behaviour of the MEMS micro-relays employed in the 8-bit reconfigurable network. A 3D model of the sole MEMS switch is built with Ansys Workbench [34][35][36] and static structural simulations are performed, applying a voltage ramp in the range 0-100 V between the actuation electrodes and the underlying counterelectrodes. A vertical air-gap of 3 µm is set, and figure 3 shows the MEMS micro-relay as the pull-in takes place.…”

Section: Electromechanical Behaviour Of the Mems Switchesmentioning

confidence: 99%

RF-MEMS for future mobile applications: experimental verification of a reconfigurable 8-bit power attenuator up to 110 GHz

Iannacci

Tschoban

2017

J. Micromech. Microeng.

View full text Add to dashboard Cite

RF-MEMS technology is proposed as a key enabling solution for realising the high-performance and highly reconfigurable passive components that future communication standards will demand. In this work, we present, test and discuss a novel design concept for an 8-bit reconfigurable power attenuator, manufactured using the RF-MEMS technology available at the CMM-FBK, in Italy. The device features electrostatically controlled MEMS ohmic switches in order to select/deselect the resistive loads (both in series and shunt configuration) that attenuate the RF signal, and comprises eight cascaded stages (i.e. 8-bit), thus implementing 256 different network configurations. The fabricated samples are measured (S-parameters) from 10 MHz to 110 GHz in a wide range of different configurations, and modelled/simulated with Ansys HFSS. The device exhibits attenuation levels (S21) in the range from −10 dB to −60 dB, up to 110 GHz. In particular, S21 shows flatness from 15 dB down to 3–5 dB and from 10 MHz to 50 GHz, as well as fewer linear traces up to 110 GHz. A comprehensive discussion is developed regarding the voltage standing wave ratio, which is employed as a quality indicator for the attenuation levels. The margins of improvement at design level which are needed to overcome the limitations of the presented RF-MEMS device are also discussed.

show abstract

“…Melle introduced a reliability modeling method to describe the dielectric charging kinetic [16]. In [17][18][19][20][21] typical structure failure phenomena, such as creep, fatigue and delamination of micro actuators, was analyzed based on Finite Element Method (FEM). However, physical modeling method regarding failure matters was still in its infancy stage.…”

Section: Introductionmentioning

confidence: 99%