Model on transport phenomena and epitaxial growth of silicon thin film in SiHCl3H2 system under atmospheric pressure

Habuka, Hitoshi; Nagoya, Takatoshi; Mayusumi, Masanori; Katayama, Masatake; Okuyama, Kikuo

doi:10.1016/0022-0248(96)00376-4

Cited by 97 publications

(109 citation statements)

References 63 publications

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“…However, the displacement is expected to have small influence on the film formation at low temperatures in the reaction-limited regime, 13 when the wafer temperature is well managed.…”

Section: Methodsmentioning

confidence: 99%

“…• C. During Step-B, the silicon epitaxial film was formed for several minutes by the chemical reaction 13 described by Equation 1.…”

Section: Methodsmentioning

confidence: 99%

“…• C and at the TCS gas concentration higher than 1%, the silicon epitaxial growth rate is governed by the chemical reaction and thus expressed as a function of the wafer temperature, T W , 13 as follows:…”

Section: Methodsmentioning

confidence: 99%

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Reflector Influence on Rapid Heating of Minimal Manufacturing Chemical Vapor Deposition Reactor

Habuka

Ishida

et al. 2016

ECS J. Solid State Sci. Technol.

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A small-sized reactor for producing a silicon epitaxial film on a half-inch silicon wafer was studied, taking into account the heat transport near the wafer. The wafer temperature slowly changed over a long time period when the reflector was made of thick plates. In contrast, when thin plates were employed as the reflector material, the wafer temperature quickly increased and easily reached a steady state. Thus, the reactor parts set near the wafer should be small, slim and thin. With the help of wafer rotation and a highly heat-conductive susceptor, a symmetrical and uniform silicon epitaxial film thickness profile could be obtained. Silicon electronic device manufacturing has two trends, that is, the increasing silicon wafer diameter and the shrinking design rule. These trends have continued for the several past decades in order to decrease the mass production cost of the device chips. However, for a future manufacturing system using silicon wafers larger than 300-mm diameter, the investment will be significant. Thus, an additional or an alternative choice is expected.The candidate for the future manufacturing system is the Minimal Manufacturing (MM), 2-5 which consumes less materials and less energy. It employs a quick process using small wafers with a 12.5-mm diameter. This system can flexibly produce the required number of electronic device chips, from one to a million, on-demand and ontime. For achieving the MM, chemical vapor deposition (CVD) is one of the key technologies.The MM CVD reactor was designed and developed in our previous study 6 taking into account the entire thermal and chemical processes. Using halogen lamps and reflectors, the infrared light was concentrated to heat the wafer surface while only consuming a reasonable amount of electric power. The silicon wafer temperature was affected by various parameters, such as the lamp voltage, total gas flow rate and precursor gas concentration.6-8 Furthermore, a reasonable and quick reactor cleaning process was achieved using the chlorine trifluoride gas. 6For obtaining a uniform epitaxial film thickness profile by the quick process, the thermal conditions should be further improved. In addition to the most important issue, such as the infrared ray reflection design, 9-11 the heat transport through the reactor parts set around the wafer may be important, particularly about the lamp heating apparatus. The CVD reactor for the large wafer has a large infrared light heater consisting of thick and wide reflector plates.9,10 While the reflector effectively reflects and concentrates the infrared rays from the halogen lamps to the wafer surface, the reflector surface simultaneously absorbs the heat from the lamps and is heated to a high temperature. The heat absorbed by the reflector is slowly transported to the wafer via various reactor parts and the gas phase. When the reflector surface temperature gradually changes during reaching the thermal steady state, the wafer temperature is considered to simultaneously show the same behavior. Particularly, when th...

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“…However, the displacement is expected to have small influence on the film formation at low temperatures in the reaction-limited regime, 13 when the wafer temperature is well managed.…”

Section: Methodsmentioning

confidence: 99%

“…• C. During Step-B, the silicon epitaxial film was formed for several minutes by the chemical reaction 13 described by Equation 1.…”

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Reflector Influence on Rapid Heating of Minimal Manufacturing Chemical Vapor Deposition Reactor

Habuka

Ishida

et al. 2016

ECS J. Solid State Sci. Technol.

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“…(3) The silicon-hydrogen and silicon-chlorine chemical bonds cannot perfectly terminate the surface to stop the film deposition, because the silicon epitaxial film growth can continue in a chlorosilane-hydrogen system at 1070 K (Habuka et al, 1996).…”

Section: Film Thicknessmentioning

confidence: 99%

Low Temperature Chemical Vapour Deposition of Polycrystalline Silicon Carbide Film Using Monomethylsilane Gas

Habuka¹

2011

Properties and Applications of Silicon Carbide

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“…The overall reaction constant is analyzed in Ref. 12 and depends on the rate of HSiCl 3 chemisorption on the surface, k ad , and the rate of decomposition into Si, k r . It can be expressed as…”

Section: Journal Of the Electrochemical Society 155 ͑6͒ D485-d491 ͑2mentioning

confidence: 99%

Chemical Vapor Deposition Model of Polysilicon in a Trichlorosilane and Hydrogen System

Coso

Cañizo

Ĺuque

2008

J. Electrochem. Soc.

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The traditional polysilicon processes should be refined when addressing the low energy consumption requirement for the production of solar grade silicon. This paper addresses the fluid dynamic conditions required to deposit polysilicon in the traditional Siemens reactor. Analytical solutions for the deposition process are presented, providing information on maximizing the rate between the amount of polysilicon obtained and the energy consumed during the deposition process. The growth rate, deposition efficiency, and power-loss dependence on the gas velocity, the mixture of gas composition, the reactor pressure, and the surface temperature have been analyzed. The analytical solutions have been compared to experimental data and computational solutions presented in the literature. At atmospheric pressure, the molar fraction of hydrogen at the inlet should be adjusted to the range of 0.85-0.90, the gas inlet temperature should be raised within the interval of 673 and 773 K, and the gas velocity should reach the Reynolds number 800. The resultant growth rate will be between 6 and 6.5 m min −1 . Operation above atmospheric pressure is strongly recommended to achieve growth rates of 20 m min −1 at 6 atm. © 2008 The Electrochemical Society. ͓DOI: 10.1149/1.2902338͔ All rights reserved. The strong photovoltaic ͑PV͒ market growth relies on crystalline silicon, using highly purified silicon as raw material, which is referred to as polysilicon. Traditionally, polysilicon for the solar industry has been obtained from the microelectronics industry, using off-spec material or the excess capacity of polysilicon producers. But the tremendous growth of the PV industry has produced a rapid change in the situation: while in 2000, PV only demanded 10% of the polysilicon, in 2005, PV demand surpassed that of the microelectronic industry, in the range of 15.000 t, 1 and the global demand exceeded the production capacity. Nevertheless, the silicon shortage that threatened PV industry is being overcome. This is resultant from initiatives taken by the polysilicon and the PV industry to keep on growing. Optimization of the purification process to address solar cell requirements must also be pursued in order to reduce the cost of the material as much as possible. For the moment, the consolidated route in the market to produce polysilicon is based on the synthesis and purification of silanes ͓monosilane ͑MS͒ or trichlorosilane ͑TCS͔͒, and their subsequent reduction in a chemical vapor deposition ͑CVD͒ reactor to solid Si. Almost 77% of the polysilicon produced worldwide is currently obtained from trichlorosilane in a CVD reactor known as a Siemens reactor. 2The Siemens reactor consists of a chamber where several highpurity silicon slim rods are heated by an electric current flowing through them, and polysilicon is deposited on the seed rods through the thermal decomposition of silanes in a hydrogen environment. The deposition features depend on the gas flux, and therefore, the fluid mechanics regime has to be analyzed profoundly to achieve ...

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Model on transport phenomena and epitaxial growth of silicon thin film in SiHCl3H2 system under atmospheric pressure

Cited by 97 publications

References 63 publications

Reflector Influence on Rapid Heating of Minimal Manufacturing Chemical Vapor Deposition Reactor

Reflector Influence on Rapid Heating of Minimal Manufacturing Chemical Vapor Deposition Reactor

Low Temperature Chemical Vapour Deposition of Polycrystalline Silicon Carbide Film Using Monomethylsilane Gas

Chemical Vapor Deposition Model of Polysilicon in a Trichlorosilane and Hydrogen System

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