Superlattices and Microstructures volume 38, issue 4-6, P272-282 2005 DOI: 10.1016/j.spmi.2005.08.004 View full text
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A.R. Kaul, O.Yu. Gorbenko, A.N. Botev, L.I. Burova

Abstract: Here we report the expansion of the Ga 2 O 3 solubility range in ZnO films grown by MOCVD on single-crystal substrates due to the epitaxial stabilization contribution. The epitaxial relations were characterized for ZnO and a broad spectrum of the substrates including c-and r-Al 2 O 3 , (111) ZrO 2 (Y 2 O 3 ), (111) SrTiO 3 , (111) Gd 3 Ga 5 O 12 , (111) MgO, (111) MgAl 2 O 4 . First, the deposition kinetics was measured in the range 300-800 • C using Zn(acac) 2 and Ga(acac) 3 , where acac = the acetylacetonat…

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