Superlattices and Microstructures volume 40, issue 4-6, P530-532 2006 DOI: 10.1016/j.spmi.2006.06.008 View full text
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Alberto Debernardi

Abstract: We present first principles calculations of Mn-doped GaN/AlN(0001) heterostructures obtained within the framework of density functional theory by using plane wave pseudopotential techniques. We found that for diluted Mn concentration this system present an integer magnetization that is a fingerprint of halfmetallic property; this suggests the possibility to use this junction as a spin injector.