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Nefyodov, Yu. A.; Shchepetilnikov, A. V.; Кукушкин, И. В.; Dietsche, W.; Schmult, S.

doi:10.1103/physrevb.83.041307

Cited by 34 publications

(29 citation statements)

References 10 publications

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“…The g-factor obtained from the angular evolution of MISO (see next section) is g MISO =0.15-0.25. The obtained g-factors are close to the bare g-factor in GaAs quantum wells 39,40 and significantly smaller the one obtained from QPMR 28 and SdH oscillations [41][42][43] in GaAs quantum well with a single populated subband. Figure 5(c) shows the angular dependence of the quantum scattering times τ (i)…”

Section: Qpmr In Tilted Magnetic Fieldsupporting

confidence: 65%

Quantum electron transport in magnetically entangled subbands

2017

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Transport properties of highly mobile 2D electrons in symmetric GaAs quantum wells with two populated subbands placed in titled magnetic fields are studied at high temperatures. Quantum positive magnetoresistance (QPMR) and magneto-intersubbands resistance oscillations (MISO) are observed in quantizing magnetic fields, B ⊥ , applied perpendicular to the 2D layer. QPMR displays contributions from electrons with considerably different quantum lifetimes, τ (1,2) q , confirming the presence of two subbands in the studied system. MISO evolution with B ⊥ agrees with the obtained quantum scattering times only if an additional reduction of the MISO magnitude is applied at small magnetic fields. This indicates the presence of a yet unknown mechanism leading to MISO damping. Application of in-plane magnetic field produces a strong decrease of both QPMR and MISO magnitude. The reduction of QPMR is explained by spin splitting of Landau levels indicating g-factor, g ≈0.4, which is considerably less than the g-factor found in GaAs quantum well with a single subband populated. In contrast to QPMR the decrease of MISO magnitude is largely related to the in-plane magnetic field induced entanglement between quantum levels in different subbands that, in addition, increases the MISO period.

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Section: Qpmr In Tilted Magnetic Fieldsupporting

confidence: 65%

Quantum electron transport in magnetically entangled subbands

2017

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“…(12)). In addition, the experiments [34,35] revealed the off-diagonal component d xy , which is determined by the interfacial contribution solely, as is seen from Eq. (14).…”

Section: Discussion Of the Results And Conclusionmentioning

confidence: 72%

“…They cannot describe the experimental results [34,35] exhibiting a considerable difference between d zz and d xx . This difference can be explained by the interfacial contribution to d xx (the second term in Eq.…”

Section: Discussion Of the Results And Conclusionmentioning

confidence: 87%

Interface contributions to the spin-orbit interaction parameters of electrons at the (001) GaAs/AlGaAs interface

et al. 2014

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One-body mechanisms of spin splitting of the energy spectrum of 2D electrons in a one-side doped (001) GaAs/AlxGa1−xAs quantum well have been studied theoretically and experimentally. The interfacial spin splitting has been shown to compensate (enhance) considerably the contribution of the bulk Dresselhaus (Bychkov-Rashba) mechanism. The theoretical approach is based on the solution of the effective mass equation in a quasitriangular well supplemented by a new boundary condition at a high and atomically sharp heterobarrier. The model takes into account the spin-orbit interaction of electrons with both bulk and interfacial crystal potential having C2v symmetry, as well as the lack of inversion symmetry and nonparabolicity of the conduction band in GaAs. The effective 2D spin Hamiltonian including both bulk and interfacial contributions to the Dresselhaus (αBIA) and Rashba (αSIA) constants has been derived. The analytical relation between these constants and the components of the anisotropic nonlinear g-factor tensor in an oblique quantizing magnetic field has been found. The experimental approach is based, on one hand, on the detection of electron spin resonance in the microwave range and, on the other hand, on photoluminescence measurements of the nonparabolicity parameter. The interfacial contributions to αBIA and αSIA have been found from comparison with the theory.

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“…The ESR is detectable as a sharp peak in R xx (B) magnetic field dependence at a fixed microwave frequency. We have successfully applied this approach to carefully investigate the g-factor anisotropy in GaAs -based heterostructures [39,40].…”

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confidence: 99%

Nuclear magnetic resonance and nuclear spin relaxation in AlAs quantum well probed by ESR

et al. 2016

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The study of nuclear magnetic resonance and nuclear spin-lattice relaxation was conducted in an asymmetrically doped to n ∼ 1.8 × 10 11 cm −2 16 nm AlAs quantum well grown in the [001]-direction. Dynamic polarization of nuclear spins due to the hyperfine interaction resulted in the socalled Overhauser shift of the two-dimensional conduction electron spin resonance. The maximum shifts achieved in the experiments are several orders of magnitude smaller than in GaAs-based heterostructures indicating that hyperfine interaction is weak. The nuclear spin-lattice relaxation time extracted from the decay of Overhauser shift over time turned out to depend on the filling factor of the two-dimensional electron system. This observation indicates that nuclear spin-lattice relaxation is mostly due to the interaction between electron and nuclear spins. Overhauser shift diminishes resonantly when the RF-radiation of certain frequencies was applied to the sample. This effect served as an indirect, yet powerful method for nuclear magnetic resonance detection: NMR quadrupole splitting of 75 As nuclei was clearly resolved. Theoretical calculations performed describe well these experimental findings.Extensive studies of nuclear spin physics in various semiconductor heterostructures have been performed in the past several decades [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19]. Such keen interest was brought about in view of both applied and fundamental significance of the topic. Nuclear spins may be utilized to store information [10,20] in terms of spinbased electronics [21][22][23][24][25], as non-equilibrium spin polarization of lattice nuclei may have extremely long lifetime [2]. On the other hand, fundamental properties of the two-dimensional conduction electrons and nuclear spins are interconnected. The effect of huge longitudinal resistance near certain fractional fillings [8,26] may be mentioned as one of the brightest examples. Moreover, the ground state spin polarization of the twodimensional electron system (2DES) can be extracted from the Knight shift [27] of the nuclear magnetic resonance (NMR) [3,4,9,12,14]. This offers the approach to investigate various 2DES exotic states including Wigner crystal [18] and ν = 5/2 state [15][16][17].One of the most fruitful approaches is to access nuclear spins experimentally through the spins of conduction electrons coupled to them by the hyperfine interaction. Spin properties of the electrons, in turn, can be effectively studied with the aid of electron spin resonance (ESR). One of the earliest adaptations of this principle for the experiments on GaAs-based heterostructures can be found in the papers [1,2]. Let us address the idea of studying nuclear spins through ESR in more details. The actual magnetic field position of ESR turned out to be dependent on the spin polarization of the nuclear system. Indeed the spin part of the Hamiltonian for the single electron in a [001] quantum well can be expressed as:Here g * is the bare electron g-factor, which does not take...

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g-factor anisotropy in a GaAs/AlxGa1−x

Cited by 34 publications

References 10 publications

Quantum electron transport in magnetically entangled subbands

Quantum electron transport in magnetically entangled subbands

Interface contributions to the spin-orbit interaction parameters of electrons at the (001) GaAs/AlGaAs interface

Nuclear magnetic resonance and nuclear spin relaxation in AlAs quantum well probed by ESR

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