Mixing of valence subbands in GaAs/<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="normal">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant="normal">−</mml:mi><mml:m

Lee, Johnson; Jagannath, C.; Vassell, M. O.; Köteles, Emil S.

doi:10.1103/physrevb.37.4164

Cited by 47 publications

(18 citation statements)

References 9 publications

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“…(3) with v = 0.31) the uniaxial deformation potential b = -1.8 eV. The crossover between light-hole line and the excited transitions of the heavy-hole in the photoluminescence excitation (PLE) under compressive uniaxial stress has been reported in [3].…”

Section: Resultsmentioning

confidence: 99%

New Method for Studying Biaxial Deformation Effects on Optical Spectra of Quantum Wells

Sosin

Trzeciakowski

1995

Acta Phys. Pol. A

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The effects of 1arge deformation were studied by preparing thin (20-30 μm) membranes with quantum-well layers on top. A small gas pressure of a few bar deforms the membrane substantially and changes the optical spectra of the quantum wells. We present the results of the photoluminescence and absorption from GaAs/AlGaAs and from InGaAs/GaAs quantum wells subjected to tensile and to compressive biaxial strain. The light-hole lines shift more than two times faster than the heavy-hole lines so that they cross under tensile strain.

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Section: Resultsmentioning

confidence: 99%

New Method for Studying Biaxial Deformation Effects on Optical Spectra of Quantum Wells

Sosin

Trzeciakowski

1995

Acta Phys. Pol. A

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“…However, all existing models that have been proposed so far to account for this stress-induced valence subband mixing are either purely phenomenological 23 and hence contain too many fitting parameters for a reliable comparison between experiment and theory, or are computationally intensive. 24,31 Although the solution by Lee et al 24 is exact within the framework of the envelope-function approach, it nevertheless has several shortcomings: ͑i͒ the numerical calculations are time consuming and difficult to reproduce due to the peculiar properties of the characteristic equation, ͑ii͒ the numerical solutions only allow a very limited insight into the physical nature of the stress-induced mixing, and ͑iii͒ these solutions do not provide any analytical expressions which could be conveniently fitted to experimental data to allow a detailed and quantitative comparison between the theoretically expected and experimentally observed features.…”

Section: Introductionmentioning

confidence: 97%

“…A great advantage of uniaxial stress as opposed to built-in strain is its ability to tune 26 the valence band structure to different strains at which strong observable features are expected theoretically, and hence to optimize certain electronic or optical properties of the quantum well. By applying in-plane uniaxial stress along the ͓100͔ direction in III-V structures grown along the ͓001͔ direction it is furthermore possible to couple the well-defined zone-center valence states 23,24,28,[30][31][32] in contrast to the case of built-in strain, where they do not couple. 31 Since, however, most experiments probe exciton effects near the zone center, i.e., close to zero in-plane wave vector k ʈ , these stress-induced mixing effects are expected to be observable in experiments.…”

Section: Introductionmentioning

confidence: 99%

“…22 One way of generating anisotropic strain is to grow layered structures with built-in strain; this has been investigated intensively over the last 15 years. 18 Comparatively little attention, either experimentally [23][24][25][26][27][28] or theoretically, 24,[29][30][31][32][33] has been given to the alternative possibility of inducing anisotropic strain using an external uniaxial stress. A great advantage of uniaxial stress as opposed to built-in strain is its ability to tune 26 the valence band structure to different strains at which strong observable features are expected theoretically, and hence to optimize certain electronic or optical properties of the quantum well.…”

Section: Introductionmentioning

confidence: 99%

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Analytic solutions for the valence subband mixing at the zone center of a GaAs/AlxGa1<

et al. 1996

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Using the envelope-function approach, we present a theoretical analysis of the effects of uniaxial stress applied along the ͓100͔ direction on the zone-center valence states of a type-I GaAs/Ga x Al 1Ϫx As ͓001͔ quantum well. The resulting strain reduces the symmetry and causes mixing between heavy and light holes which can be described approximately within the ⌫ 8 subspace by a 4ϫ4 Luttinger-Kohn Hamiltonian in conjunction with the correct 4ϫ4 Bir-Pikus strain Hamiltonian. An approximate analytic solution is found by expanding the finite-stress solutions in terms of the zero-stress eigenstates. This representation allows a detailed analysis of the strain-induced coupling terms between heavy and light holes. By neglecting all small coupling terms it is possible to describe the hole mixing at any stress in terms of independent two-level systems. In this case the Hamiltonian becomes block diagonal and can easily be diagonalized analytically. Within the experimentally accessible pressure range of 10 kbar, these simple analytic solutions deviate from the large-scale numerical solutions by less than 1%. The coupling of the spin-orbit split-off states in the ⌫ 7 subspace to the ⌫ 8 subspace at finite and zero stress is then taken into account via second-order perturbation theory. Comparison of the theoretical results with experimental photoluminescence data shows good agreement and provides strong evidence for the stress-induced hole mixing. ͓S0163-1829͑96͒04231-2͔

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“…[33][34][35][36][37][38][39][40]. The authors demonstrate the efficiency of the application of external stress to the control of the hh-lh coupling and, correspondingly, of various properties of such devices as laser diodes and high-electron-mobility transistors (HEMPTs).…”

Section: Introductionmentioning

confidence: 99%

Reduction of exciton mass by uniaxial stress in GaAs/AlGaAs quantum wells

Loginov

Grigoryev

Efimov

et al. 2016

Phys. Status Solidi B

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Abstractauthoren We show experimentally that the uniaxial stress applied along the twofold symmetry axis of a high‐quality heterostructure containing a wide GaAs/AlGaAs quantum well leads to considerable modification of the exciton‐polariton reflectivity spectra. We observe: (i) the energy splitting of the light‐hole and heavy‐hole exciton resonances to appear and (ii) the increase of the quasiperiod (divergence) of spectral oscillations related to the optically allowed exciton‐polariton transitions. A theoretical analysis shows that the first effect is due to the strain‐induced reduction of crystal symmetry. The divergence of spectral oscillations is found to be due to the strain‐induced decrease of the heavy‐hole exciton mass. The effective mass is reduced by 5% at the pressure of P=0.23GPa. This effect shows the potentiality of spectroscopic ways of strain detection in semiconductors.

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Mixing of valence subbands in GaAs/AlxGa1−

Cited by 47 publications

References 9 publications

New Method for Studying Biaxial Deformation Effects on Optical Spectra of Quantum Wells

New Method for Studying Biaxial Deformation Effects on Optical Spectra of Quantum Wells

Analytic solutions for the valence subband mixing at the zone center of a GaAs/AlxGa1<

Reduction of exciton mass by uniaxial stress in GaAs/AlGaAs quantum wells

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