Microwave performance of n-p-n and p-n-p AlGaAs/GaAs heterojunction bipolar transistors

Bayraktaroglu, B.; Camilleri, N.; Lambert, S.A.

doi:10.1109/22.17424

Cited by 27 publications

(6 citation statements)

References 8 publications

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“…The tested HBT shows the appearance of the kink effect in S 22 , this phenomenon is due to an abrupt change in the behavior at a certain frequency. In particular, such an anomalous jump is caused by the transition of the output impedance from a low‐frequency series RC circuit to a high‐frequency parallel RC circuit [ 25‐27 ] .…”

Section: Resultsmentioning

confidence: 99%

Sensitivity analysis and uncertainty estimation in small‐signal modeling forInP HBT(invited paper)

Cao

Zhang

Gao

2020

Int J Numerical Modelling

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In this paper, a sensitivity analysis and uncertainty estimation of small‐signal model for InP HBT is presented. Analytical expressions for sensitivity are derived in terms of the measured S‐parameters based on the direct intrinsic parameters extraction. Furthermore, the uncertainties of the intrinsic parameters vs frequency are discussed to give more reliable extraction results. The optimal solutions of the parameters are obtained by utilizing sensitivity analysis. In the frequency range of 45 MHz‐40GHz, good fits between the measured and modeled S‐parameters are achieved for 5 × 5μm2 InP HBT.

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Section: Resultsmentioning

confidence: 99%

Sensitivity analysis and uncertainty estimation in small‐signal modeling forInP HBT(invited paper)

Cao

Zhang

Gao

2020

Int J Numerical Modelling

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“…In the era of sub-50-nm MOSFET, precise control of doping profile in the channel and source/drain region is needed [1]. Intensive searches have been done for a source/drain extension layer with ultra-shallow junction depth and reasonable resistance.…”

Section: A New 50-nm Nmosfet With Side-gates For Virtual Source-drainmentioning

confidence: 99%

“…The anomalous dip in scattering parameter S 22 of BJTs or HBTs have been seen frequently in the literatures [1], [2]. Even though qualitative argument has given to explain this phenomenon [3], yet up to now no quantitative analysis has been done for verification.…”

Section: Introductionmentioning

confidence: 99%

An Analysis of the Anomalous Dip in Scattering Parameter S₁₁ of InGaP/GaAs Heterojunction Bipolar Transistors (HBTs)

Lin

2004

Jpn. J. Appl. Phys.

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The kink phenomenon in scattering parameter of InGaP-GaAs heterojunction bipolar transistors (HBTs) was explained quantitatively for the first time. Our results show that the output impedance of InGaP-GaAs HBTs can be represented by a simple series resistance-capacitance (-) circuit at low frequencies and a simple parallel-circuit at high frequencies very accurately because of the high output resistance of HBTs. The behavior of of HBTs is in contrast with that of field effect transistors (FETs), where the smaller drain-source output resistance obscures the ambivalent characteristics.

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“…The kink phenomenon in scattering parameter S 22 of FETs/BJTs can be seen frequently in the literature [1][2][3][4]. Up to now, two different origins of the S 22 kink phenomenon in deep sub-micron RF MOSFETs have been reported [5][6].…”

Section: Introductionmentioning

confidence: 98%

“…According to recent results, there does not always seem to exist a sufficient margin for this limit when mobile telephones are used. Therefore, much work on the SAR compliance has been carried out in the last several years [3]. In accordance with such assessments, the influence of the human head on radiation characteristics of handset antennas has also been investigated.…”

Section: Introductionmentioning

confidence: 99%

An analysis of the kink phenomenon of scattering parameter S₂₂ in RF power mosfets for system‐on‐chip (SOC) applications

Lin

2003

Micro & Optical Tech Letters

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tures. The frequency domain behaviors of the unit cells are characterized using S-matrix files. Simulation results have been compared to measurements on a benchmark structure fabricated in LTCC. The transmission line approach requires 30 minutes with good agreement between simulation and measurement results up to 9 GHz for a 2.5 mm grid pitch and up to 16 GHz for a 1 mm grid pitch. A comparable full wave simulation using Ansoft's HFSS requires more than 100 hours to accurately model the frequency domain behavior of the whole structure. [6]. In this paper, based on the results of RF power n-MOSFETs for system on chip (SOC) applications, the third origin of the S 22 kink phenomenon in deep sub-micron RF MOSFETs, that is, small-signal gate-drain resistance, is reported and explained quantitatively for the first time. It is found that an increase of drain-to-spacer offset enhances the kink effect. That is to say, for devices with higher effective gate-drain channel resistance R gd connected in series to gate-drain capacitance, the kink effect is more prominent. The concept of dual-feedback circuit methodology [7] is used to simplify the circuit analysis of the small-signal model of RF power n-MOSFETs and then the output impedance of the devices is derived. The formula shows that the output impedance of the RF power n-MOSFETs follows a "shifted" constant resistance r circle at low frequencies, and then a "shifted" constant conductance g circle at high frequencies, which is in agreement with the experimental results. In addition, the kink effect in scattering parameter S 22 of RF power n-MOSFETs can also be interpreted in terms of poles and zeros [6]. That is to say, according to the two-pole approximation, S 22 have two poles and two zeros. It is proven that the two zeros fall between the two poles, and therefore, a dip can be observed in the Bode plot of ͉S 22 ͉. DEVICE STRUCTURE AND S 22 VERSUS GATE-DRAIN RESISTANCEThe RF power n-MOSFETs studied in this paper were fabricated by 0.15 m CMOS technology. The n-MOSFETs with a gate length of 0.45 m and a total gate width of 500 m were divided into 50 fingers. The layout of the p-well contacts were designed as guard-rings to prevent the substrate coupling noise, and additional p-well contacts were butted with source contacts to reduce p-well resistance. The cross section of the n-MOSFET structure is schematically shown in Figure 1. Devices with drain-to-spacer offsets 0 m, 0.2 m, 0.4 m, 0.6 m, and 0.8 m were fabricated and studied. An additional N Ϫ implantation was done only at the drain side before the formation of a sidewall nitride spacer. After the source/drain formation, an oxide film was deposited and defined, which left an oxide film on the offset area to avoid the silicidation on this region during CoSi x formation. The low concentration of N Ϫ implantation and the long offset distance of N ϩ at drain terminal can reduce the electric field and impact ionization at the drain side. Therefore, the breakdown voltage can be improved. It showed that the drain breakdo...

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Microwave performance of n-p-n and p-n-p AlGaAs/GaAs heterojunction bipolar transistors

Cited by 27 publications

References 8 publications

Sensitivity analysis and uncertainty estimation in small‐signal modeling forInP HBT(invited paper)

Sensitivity analysis and uncertainty estimation in small‐signal modeling forInP HBT(invited paper)

An Analysis of the Anomalous Dip in Scattering Parameter S₁₁ of InGaP/GaAs Heterojunction Bipolar Transistors (HBTs)

An analysis of the kink phenomenon of scattering parameter S₂₂ in RF power mosfets for system‐on‐chip (SOC) applications

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Microwave performance of n-p-n and p-n-p AlGaAs/GaAs heterojunction bipolar transistors

Cited by 27 publications

References 8 publications

Sensitivity analysis and uncertainty estimation in small‐signal modeling forInP HBT(invited paper)

Sensitivity analysis and uncertainty estimation in small‐signal modeling forInP HBT(invited paper)

An Analysis of the Anomalous Dip in Scattering Parameter S11 of InGaP/GaAs Heterojunction Bipolar Transistors (HBTs)

An analysis of the kink phenomenon of scattering parameter S22 in RF power mosfets for system‐on‐chip (SOC) applications

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An Analysis of the Anomalous Dip in Scattering Parameter S₁₁ of InGaP/GaAs Heterojunction Bipolar Transistors (HBTs)

An analysis of the kink phenomenon of scattering parameter S₂₂ in RF power mosfets for system‐on‐chip (SOC) applications