prior arts. The proposed LNA shows an FOM among the best compared with the published results in the table.
FOM ¼Gain½abs
CONCLUSIONSA V-band LNA with ESD protection network was realized in 65-nm CMOS technology using the proposed RF junction varactors as the ESD devices. Under a power consumption of only 14.1 mW, the LNA demonstrated a NF of 5.2 dB with an associated power gain of 10.9 dB, only a 0.8-dB degradation of both power gain and NF compared with the reference LNA. The proposed gate-source junction varactor design technique successfully enhanced the ESD protection level from 2.0 to 4 kV for the ND and NS modes. REFERENCES 1. E. Ragonese, A. Scuderi, and G. Palmisano, A transformer-loaded variable-gain LNA for 24-GHz vehicular short-range radar, Microwave Design and analysis for a 60-GHz low-noise amplifier with