Microfabricated Magnetics on Silicon for Point of Load High-Frequency DC–DC Converter Applications

Application of DC-DC Converter in Sensor and MEMS Device Integration and Packaging

“…The researchers took the power supply of the central processing unit of the portable equipment as the entry point and analyzed the multiphase DC with different voltage input/output ranges. Several key technologies of DC converter chips are studied [2]. There is a body diode turn-on and turn-off process, the application of bidirectional DC-DC converters will introduce new losses [3][4][5], and the optimal design for the control and drive of this type of converter has not been able to obtain a better solution [6]; therefore, studying the optimal driving method of RC-IGBT (reverse conducting IGBT) bidirectional DC-DC converter can provide an effective solution to the problem of RC-IGBT body diode characteristics in the bidirectional DC-DC converter scenario, which is helpful for ensuring the reliability of this type of converter [7].…”

Unleashing the Performance of Self‐Rolled‐Up 3D Inductors via Deterministic Electroplating on Cylindrical Surfaces

“…Benchmark of S‐RuM electroplated inductors with conventional state‐of‐the‐art (SoA) inductors. a) Benchmark chart of L/area vs Q/area for three types of S‐RuM inductors against other SoA micro‐inductors recently reported in the literature: [ 58–72 ] (green) 2‐cell, 5‐turn, Cu plated devices; (yellow) 4‐cell, 15‐turn, Cu plated devices; (red) 4‐cell, 10‐turn, Cu shell and magnetic core plated devices (circle for control/unplated, star for plated). b) Comparison of S‐RuM devices of the same geometries with and without electroplating: (green) 2‐cell, 5‐turn, Cu plated devices showing significant resistance drop; (yellow) 4‐cell, 15‐turn, Cu plated devices showing significant resistance drop; (red) 4‐cell, 5‐turn, and (blue) 4‐cell 10‐turn, Cu shell and magnetic core plated devices, showing both significant resistance drops and inductance increases (circle for control/unplated, triangle for plated).…”

“…Figure a compares the performance, inductance density (L/area) vs Q/area, of the S‐RuM power inductors with conventional state‐of‐the‐art (SoA) micro‐inductors with similar sizes, frequencies, and application targets. [ 58–72 ] By this figure of merit, S‐RuM Cu plated inductors achieved very high Q per area due to resistance improvements of over 10x. The Q value of the 2‐cell, 5‐turn S‐RuM inductors (plotted in green) improved from 2 to 15 without changing the physical areal footprint of 0.15 mm 2 , allowing this device design to reach a higher Q per area than all other reported micro‐inductors.…”