Microbolometer with a salicided polysilicon thermistor in CMOS technology

Guo, Yaozu; Luo, Mingcheng; Ma, Haolan; Zhu, Haoyu; Yu, Le; Yan, Feng; Han, Ping; Ji, Xiaoli

doi:10.1364/oe.439970

Cited by 13 publications

(6 citation statements)

References 31 publications

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“…In Figure 9 , we show the voltage responsivity, while in Figure 10 , we show the detectivity at different bias current values. These results, compared with bolometers based on VO x , showed an improvement in the responsivity and detectivity [ 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 ]. The results of our work were compared with other work and mentioned in Table 7 .…”

Section: Resultsmentioning

confidence: 94%

Design and Simulation of Microbolometer with Dual Cavity for High Figure of Merits

Díaz-Aponte

Rana

2023

Micromachines

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The rapid expansion of the applications of infrared (IR) sensing in the commercial market has driven the need to develop new materials and detector designs for enhanced performance. In this work, we describe the design of a microbolometer that uses two cavities to suspend two layers (sensing and absorber). Here, we implemented the finite element method (FEM) from COMSOL Multiphysics to design the microbolometer. We varied the layout, thickness, and dimensions (width and length) of different layers one at a time to study the heat transfer effect for obtaining the maximum figure of merit. This work reports the design, simulation, and performance analysis of the figure of merit of a microbolometer that uses GexSiySnzOr thin films as the sensing layer. From our design, we obtained an effective thermal conductance of 1.0135×10−7 W/K, a time constant of 11 ms, responsivity of 5.040×105 V/W, and detectivity of 9.357×107 cm−Hz1/2/W considering a 2 μA bias current.

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Section: Resultsmentioning

confidence: 94%

Design and Simulation of Microbolometer with Dual Cavity for High Figure of Merits

Díaz-Aponte

Rana

2023

Micromachines

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“…Fig. 6 (a) shows the dependence of resistance R on temperature rise for devices A and B, as fitted by the following Equation [36]:…”

Section: Resultsmentioning

confidence: 99%

“…The solid lines in Fig. 3 indicate the calculation results obtained by uisng Equation (5) as follows [36]:…”

Section: Design and Simulationmentioning

confidence: 99%

Performance-Enhanced Polysilicon Microbolometer in CMOS Technology With a Grating Structure

Guo

Wang

et al. 2023

IEEE Photonics J.

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The resistive microbolometer fabricated by using CMOS technology can be monolithically integrated with the readout circuit but usually performs poorly in responsivity and detectivity. In this paper, the poly-Si microbolometer with Al grating structure is demonstrated in the standard CMOS process. The simulation results show that not only are surface plasmon polaritons generated at the interface of the Al grating and SiO2, Al grating also provides the infrared resonant cavity required for the absorber, which improves the responsivity of the microbolometer. According to the experimental results, the maximum detectivity of the microbolometer with the grating structure reaches up to 2.2610 9 cmHz 1/2 /W at 10 μm, which means an increase by 27.8% compared to the one without the Al grating. Moreover, the average detectivity of the microbolometer is also improved when the wavelength ranges from 7 μm to 13 μm. It is effortless to implement the proposed high-performance microbolometer in a unit structure based on CMOS technology, which is favorable to high-density array integration.

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“…However, the voltage responsivity of the metal Al microbolometer dropped significantly after 10 Hz, decreasing gradually from 1.02 × 10 3 V/W to 1.31 × 10 2 V/W. The experimental data are fitted by the line representing the equation of reference [29], and the thermal time constants of 36.7 ms and 10.2 ms can be obtained. These values are substantially close to the simulated values of 34.2 ms and 11.5 ms for the silicide polysilicon microbolometer and the metal Al microbolometer, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…Compared with thermocouple microbolometers [21], the microbolometers used salicide polysilicon as a thermistor can more easily obtain higher detectivity. A more detailed comparison of the microbolometer with other types of detectors is described in the previous work [29]. From the above discussion, it can be known that the salicide polysilicon is more suitable for preparing uncooled infrared detectors based on standard CMOS processes.…”

Section: Resultsmentioning

confidence: 99%

Impact of Various Thermistors on the Properties of Resistive Microbolometers Fabricated by CMOS Process

Guo

Jiang

et al. 2022

Micromachines

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Microbolometers based on the CMOS process has the important advantage of being automatically merged with circuits in the fabrication of larger arrays, but they typically suffer from low detectivity due to the difficulty in realizing high-sensitivity thermistors in the CMOS process. In this paper, two resistive microbolometers based on polysilicon and metal Al thermistors, respectively, are designed and fabricated by the standard CMOS process. Experimental results show that the detectivity of the two resistive microbolometers can reach a maximum of 1.78 ´ 109 cmHz1/2/W at 25 μA and a maximum of 6.2 ´ 108 cmHz1/2/W at 267 μA. The polysilicon microbolometer exhibits better detectivity at lower bias current due to its lower effective thermal conductivity and larger resistance. Even though the thermal time constant of the polysilicon thermistor is three times slower than that of the metal Al thermistor, the former is more suitable for designing a thermal imaging system with sensitive and low power consumption.

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Microbolometer with a salicided polysilicon thermistor in CMOS technology

Cited by 13 publications

References 31 publications

Design and Simulation of Microbolometer with Dual Cavity for High Figure of Merits

Design and Simulation of Microbolometer with Dual Cavity for High Figure of Merits

Performance-Enhanced Polysilicon Microbolometer in CMOS Technology With a Grating Structure

Impact of Various Thermistors on the Properties of Resistive Microbolometers Fabricated by CMOS Process

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