Micro x-ray photoemission and Raman spectroscopic studies on bandgap tuning of graphene oxide achieved by solid state ionics device

Tsuchiya, Takashi; Terabe, Kazuya; Aono, Masakazu

doi:10.1063/1.4901103

Cited by 24 publications

(33 citation statements)

References 32 publications

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“…The capacitance in the EDLT was less than half that of all-solid-state EDLTs using a Gd-doped CeO 2 (GDC) oxide ion conductor (14μF cm −2 ) and of ionicliquid EDLTs (13μF cm −2 ). 5,16 The estimated μ is slightly better than that of the EDLT using GDC (0.55 cm 2 / Vs) and comparable to those (0.4 to 0.7 cm 2 /(V s)) of other type fieldemission-transistors (FETs) using STO single crystal. 25,26 In contrast to that at 473 K, the estimated μ at 298 K was unreasonably small value due to the extremely small variation in i D .…”

Section: Resultsmentioning

confidence: 62%

Effect of Ionic Conductivity on Response Speed of SrTiO₃-Based All-Solid-State Electric-Double-Layer Transistor

Tsuchiya

Ochi

Higuchi

et al. 2015

ACS Appl. Mater. Interfaces

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An all-solid-state electric-double-layer transistor (EDLT) with a Y-stabilized ZrO₂ (YSZ) proton conductor/SrTiO₃ (STO) single crystal has been fabricated to investigate ionic conductivity effect on the response speed, which should be a key parameter for development of next-generation EDLTs. The drain current exhibited a 4-order-of-magnitude increment by electrostatic carrier doping at the YSZ/STO interface due to ion migration, and the behavior strongly depended on the operation temperature. An Arrhenius-type plot of the ionic conductivity (σ(i)) in the YSZ and t(c)⁻¹, which is a current-rise time needed for charge accumulation at the YSZ/STO interface, shows a synchronized variation, indicating a proportional relationship between the two parameters. Analysis of the σ(i)-t(c) diagram shows that, in contrast to conventional EDLTs, the response speed should reach picosecond order at room temperature by using extreme miniaturization and superionic conductors. Furthermore, the diagram indicates that plenty of solid electrolytes, which have not been used due to the lack of criteria for evaluation, can be a candidate for all-solid-state EDLTs exceeding the carrier density of conventional EDLTs, even though the response speed becomes comparably lower than those of FETs.

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Section: Resultsmentioning

confidence: 62%

Effect of Ionic Conductivity on Response Speed of SrTiO₃-Based All-Solid-State Electric-Double-Layer Transistor

Tsuchiya

Ochi

Higuchi

et al. 2015

ACS Appl. Mater. Interfaces

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“…A proton conductivity of 5.98×10 -5 S⁄ cm was achieved at room temperature in the preferentially oriented thin film, which is two orders of magnitude higher than that of polycrystalline ceramics. Such conductivity is applicable to practical devices [26][27][28][29][30]. Most notable was the~10 -2 S/cm proton conductivity exhibited in a high humidity atmosphere, as shown in Fig.…”

Section: Resultsmentioning

confidence: 89%

“…When considering practical devices, thin film forms are more suitable than porous or nanocrystalline forms. Proton conducting CeO 2 thin films may be applied to many types of electrochemical devices, such as electric double-layer transistors (EDLTs), which operate based on EDL-induced carrier doping [26][27][28][29][30]. While surface proton conduction has already been found in both pure and doped CeO 2 ceramics and thin films [18][19][20][21][22], the proton conductivity was not sufficiently high for practical applications.…”

Section: Introductionmentioning

confidence: 99%

Surface Proton Conduction of Sm-Doped CeO2-δ Thin Film Preferentially Grown on Al2O3 (0001)

et al. 2020

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Sm-doped CeO 2-δ (Ce 0.9 Sm 0.1 O 2-δ ; SDC) thin films were prepared on Al 2 O 3 (0001) substrates by radio frequency magnetron sputtering. The prepared thin films were preferentially grown along the [111] direction, with the spacing of the (111) plane (d 111) expanded by 2.6% to compensate for a lattice mismatch against the substrate. The wet-annealed SDC thin film, with the reduced d 111 value, exhibited surface protonic conduction in the lowtemperature region below 100°C. The O1s photoemission spectrum exhibits H 2 O and OH − peaks on the SDC surface. These results indicate the presence of physisorbed water layers and the generation of protons on the SDC (111) surface with oxygen vacancies. The protons generated on the SDC surface were conducted through a physisorbed water layer by the Grotthuss mechanism.

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“…The on/off ratio increased, while l FE decreased with the variation of I off , and both of them in the device can be tuned by the band-gap tuning (BGT). Their further work clarified the band-gap tuning mechanism in GO-EDLTs by micro-XPS and Raman spectroscopy [63].…”

Section: Carbon Nanotubes and Graphenementioning

confidence: 99%

Electric double-layer transistors: a review of recent progress

2015

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With the miniaturization of electronic devices, it is essential to achieve higher carrier density and lower operation voltage in field-effect transistors (FETs). However, this is a great challenge in conventional FETs owing to the low capacitance and electric breakdown of gate dielectrics. Recently, electric double-layer technology with ultra-high charge-carrier accumulation at the semiconductor channel/electrolyte interface has been creatively introduced into transistors to overcome this problem. Some interesting electrical transport characteristics such as superconductivity, metal-insulator transition, and tunable thermoelectric behavior have been modulated both theoretically and experimentally in electric double-layer transistors (EDLTs) with various semiconductor channel layers and electrolyte materials. The present article is a review of the recent progress in the EDLTs and the impacts of EDLT technology on modulating the charge transportation of various electronics.

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Micro x-ray photoemission and Raman spectroscopic studies on bandgap tuning of graphene oxide achieved by solid state ionics device

Cited by 24 publications

References 32 publications

Effect of Ionic Conductivity on Response Speed of SrTiO₃-Based All-Solid-State Electric-Double-Layer Transistor

Effect of Ionic Conductivity on Response Speed of SrTiO₃-Based All-Solid-State Electric-Double-Layer Transistor

Surface Proton Conduction of Sm-Doped CeO2-δ Thin Film Preferentially Grown on Al2O3 (0001)

Electric double-layer transistors: a review of recent progress

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Micro x-ray photoemission and Raman spectroscopic studies on bandgap tuning of graphene oxide achieved by solid state ionics device

Cited by 24 publications

References 32 publications

Effect of Ionic Conductivity on Response Speed of SrTiO3-Based All-Solid-State Electric-Double-Layer Transistor

Effect of Ionic Conductivity on Response Speed of SrTiO3-Based All-Solid-State Electric-Double-Layer Transistor

Surface Proton Conduction of Sm-Doped CeO2-δ Thin Film Preferentially Grown on Al2O3 (0001)

Electric double-layer transistors: a review of recent progress

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Effect of Ionic Conductivity on Response Speed of SrTiO₃-Based All-Solid-State Electric-Double-Layer Transistor

Effect of Ionic Conductivity on Response Speed of SrTiO₃-Based All-Solid-State Electric-Double-Layer Transistor