MeV ion beam deformation of colloidal silica particles

MeV Si ion irradiation effects on the optical absorption properties of metallic nanoparticles embedded in silica

“…Afterwards the samples were cut into several pieces to be irradiated at room temperature with 8 and 10 MeV Si ions at an angle of 45°with respect to the sample surface. The Si ion fluences ranged from 1.5 Â 10 15 to 1 Â 10 16 Si/cm 2 , and were chosen according to our previous results concerning the ion beam-induced deformation of silica particles [16]. Ion implantation and RBS analysis were performed using our 3 MV Tandem accelerator (NEC 9SDH-2 Pelletron).…”

Deformation of colloidal silica particles using MeV Si ion irradiation

“…This ion-beam induced anisotropic deformation of amorphous materials such as silica has been observed in the case of SiO 2 films on Si substrates [3] as well as in colloidal silica particles [4,5]. In both cases the resulting effect is an increase of the sample dimensions perpendicular to the ion beam and a decrease in the direction parallel to the ion beam as a function of the fluence [5,6]. This effect has been observed in several classes of amorphous materials, but never in crystalline samples.…”

“…Indeed, it has been observed that amorphous glassy materials like silicon dioxide [3,4] can undergo extreme deformations under exposure to high-energy beams. This ion-beam induced anisotropic deformation of amorphous materials such as silica has been observed in the case of SiO 2 films on Si substrates [3] as well as in colloidal silica particles [4,5]. In both cases the resulting effect is an increase of the sample dimensions perpendicular to the ion beam and a decrease in the direction parallel to the ion beam as a function of the fluence [5,6].…”

Tunable nanometer electrode gaps by MeV ion irradiation

“…[11][12][13][14] The electronic energy loss of the incoming MeV ions causes an anisotropic deformation consisting of an increase in the sample dimensions perpendicular to the ion beam and a decrease in the dimension parallel to the ion beam. 15 Induced strains accumulate with increasing ion beam fluence and can exceed unity, causing microns of dimensional changes.…”