2006 IEEE 4th World Conference on Photovoltaic Energy Conference 2006
DOI: 10.1109/wcpec.2006.279567
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Metamorphic and Lattice-Matched Solar Cells Under Concentration

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Cited by 19 publications
(22 citation statements)
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“…Spectrolab, a leading manufacturer of high performance III-V cells, presented a lattice-matched In 0.495 Ga 0.505 P/In 0.01 Ga 0. 99 As/Ge 3J cell with a 39.0% efficiency at 236 suns under AM1.5D in 2005 [26,27] followed by a metamorphic (i.e., slightly lattice-mismatched) In 0.56 Ga 0.44 P/In 0.08 Ga 0.92 As/Ge with 40.7% at 240 suns in 2007 [28,29]. Higher indium content in top InGaP and middle InGaAs subcells pulls their bandgap energies down and increases photocurrent in those subcells to obtain a better current-matching to the bottom Ge subcell.…”
Section: Developments Of Multijunction Iii-v Solar Cellsmentioning
confidence: 99%
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“…Spectrolab, a leading manufacturer of high performance III-V cells, presented a lattice-matched In 0.495 Ga 0.505 P/In 0.01 Ga 0. 99 As/Ge 3J cell with a 39.0% efficiency at 236 suns under AM1.5D in 2005 [26,27] followed by a metamorphic (i.e., slightly lattice-mismatched) In 0.56 Ga 0.44 P/In 0.08 Ga 0.92 As/Ge with 40.7% at 240 suns in 2007 [28,29]. Higher indium content in top InGaP and middle InGaAs subcells pulls their bandgap energies down and increases photocurrent in those subcells to obtain a better current-matching to the bottom Ge subcell.…”
Section: Developments Of Multijunction Iii-v Solar Cellsmentioning
confidence: 99%
“…However addition of Al induces a significant reduction of the photocurrent of the InGaP cell probably due to the adverse effect of Al and the associated oxygen contamination on minority-carrier properties [47]. Lowering the bandgap of the current-limiting GaAs middle subcell by substituting a portion of the Ga content with In is another approach for higher efficiency than the InGaP/GaAs/Ge 3J cell, although this approach accompanies lattice mismatch and requires graded buffer layers or suffers from large density of dislocations otherwise [27,48]. Thinning of the InGaP subcell to pass a fraction of photons to the GaAs subcell is an alternative, moderate solution [13].…”
Section: 0 Ev Bandgap Subcellsmentioning
confidence: 99%
“…These devices represent a substantial increase in efficiency over existing tandem approaches 18,19 particularly given that the results are measured at 20Â rather than at high concentration typical of tandem devices.…”
Section: Sum Of the Solar Cell Efficienciesmentioning
confidence: 99%
“…The incorporation of N atoms in the III-V group compound semiconductors like GaNXSb1-X, indicates a large band gap reduction. This has been correlated with the fact that nitrogen introduces localized levels in the band structures that interact with the conduction band and result into the formation of non-parabolic sub bands [11].…”
Section: Epitaxial Lattice Matching and The Growth Techniques Of Compmentioning
confidence: 99%