Metal‐Urea Complex—A Precursor to Metal Nitrides

Qiu, Yu; Gao, Lian

doi:10.1111/j.1551-2916.2004.00352.x

Cited by 72 publications

(43 citation statements)

References 28 publications

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“…However, nitrate was used in this case. The result indicates that NO 3 -anions from the nitrate play an important role in the formation of the oxide [20]. The proposed main reactions are…”

Section: Resultsmentioning

confidence: 91%

“…After the addition of urea to the In(NO 3 ) 3 ethanol solution, urea coordinated with In 3 þ cations and formed an indium-urea complex. The urea ligand group in the inner coordination sphere and nitrate anion in the outer sphere are possibly formed in the solution [20]. After the ethanol evaporates, the mixture condenses to a translucent glassy gel in which the ligation of indium ion and urea provide a coordinated environment for the subsequent reactions.…”

Section: Resultsmentioning

confidence: 99%

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Synthesis of single-crystal nanoparticles of indium oxide by “urea glass” method and their electrochemical properties

et al. 2013

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“…However, nitrate was used in this case. The result indicates that NO 3 -anions from the nitrate play an important role in the formation of the oxide [20]. The proposed main reactions are…”

Section: Resultsmentioning

confidence: 91%

Section: Resultsmentioning

confidence: 99%

Synthesis of single-crystal nanoparticles of indium oxide by “urea glass” method and their electrochemical properties

et al. 2013

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“…Using urea as a nitrogen source with chloride-or alkoxide-based precursors leads to TiN, VN, CrN, Fe 2 N, Fe 3 N, NbN, Mo 2 N, MoN, W 2 N [76]. The only nitrogen-rich phase to have been produced in this way is Ta 3 N 5 [77].…”

Section: Ambient and Low Pressure Synthesis Approachesmentioning

confidence: 99%

Nitrogen-rich transition metal nitrides

Salamat

Hector

Kroll

et al. 2013

Coordination Chemistry Reviews

124

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The solid state chemistry leading to the synthesis and characterization of metal nitrides with N:M ratios > 1 is summarized. Studies of these compounds represent an emerging area of research. Most transition metal nitrides have much lower nitrogen contents, and they often form with nonor sub-stoichiometric compositions. These materials are typically metallic with often superconducting properties, and they provide highly refractory, high hardness materials with many technological applications. The higher metal nitrides should achieve formal oxidation states (OS) attaining those found among corresponding oxides, and they are expected to have useful semiconducting properties. Only a very few examples of such high OS nitrogen-rich compounds are known at present. The main group elements typically form covalently bonded nitride ceramics such as Si 3 N 4 , Ge 3 N 4 and Sn 3 N 4 , and the early transition metals Zr and Hf produce Zr 3 N 4 and Hf 3 N 4 . However, the only main example of a highly nitrided transition metal compound known to date is Ta 3 N 5 , that has a formal oxidation state +5 and is a semiconductor with visible light absorption leading to applications as a pigment and in photocatalysis. New synthesis routes are being explored to study the possible formation of other N-rich materials that are predicted to exist by ab initio calculations. There is a useful interplay between theoretical predictions and experimental synthesis studies at ambient and high pressure conditions, as we explore and establish the existence and structure-property relations of these new nitride compounds and polymorphs. Here we review the state of current investigations and indicate possible new directions for further work.[a] European Synchrotron Radiation Facility,

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“…[11][12] Figure 3 shows TG mass loss (a) and the corresponding DSCs tudies (b-d) of the urea-nitrate complexes (1), (2)a nd (3)i no xygen. The need of elevated temperatures for urea complexes of metal chlorides is largely due to an endothermic reaction leading to the formation of stable intermediates which undergo further decomposition only at elevated temperatures (> 600 0 C) accompanied by the elimination of hydrochloric acid.…”

Section: Resultsmentioning

confidence: 99%

“…Oneapproach uses the systematic introduction of reactive ligand groups,s uch as nitro or nitroso functionalities, into the ligand framework of the precursor.T his facilitates the start of the decomposition via thermald ecay. [11] Duringt he thermald ecompositiona nd the subsequent comproportionation,r eaction between the nitrogen containing constituents (i.e. metal nitrates) and a" fuel" (e.g.…”

Section: Introductionmentioning

confidence: 99%

Aqueous Solution Processing of Combustible Precursor Compounds into Amorphous Indium Gallium Zinc Oxide (IGZO) Semiconductors for Thin Film Transistor Applications

Sanctis

Hoffmann

Koslowski

et al. 2018

Chemistry An Asian Journal

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Combustion synthesis of semiconducting amorphous indium gallium zinc oxide IGZO (In:Ga:Zn, 7:1:1.5) thin films was carriedo ut using urea nitrate precursor compounds of indium(III), gallium(III) and zinc(II).T hisa pproach provides further understanding towards the oxide formation process under am oderate temperature regime by employment of well-defined coordination compounds.A ll precursor compoundsw ere fully characterizedb ys pectroscopic techniques as well as by single crystal structure analysis. Their intrinsic thermal decomposition was studied by ac ombination of differentials canningc alorimetry (DSC) and thermogravimetry coupled with mass spectrometry and infrared spectroscopy (TG-MS/IR). For all precursors am ultistep decomposi-tion involving ac omplex redox-reaction pathway under in situ formation of nitrogen containing molecular speciesw as observed. Controlled thermalc onversion of am ixture of the indium,g allium and zinc urea nitratec omplexes into ternary amorphous IGZO films could thus be achieved.T hin film transistors (TFTs) were fabricated from ad efined compositional mixture of the molecular precursors. The TFT devices exhibited decent chargec arrierm obilitieso f0 .4 and 3.1 cm 2 /(Vs) after annealing of the deposited films at temperaturesa sl ow as 250 and 350 8C, respectively.T his approach represents as ignificant step furthert owards al ow temperature solution processing of semiconducting thin films.[ + ++ + ] X-ray crystal structure determination.[ + + ] XPS investigation.Supporting information and the ORCID identification number(s) for the author(s) of this article can be found under: https://doi.

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Metal‐Urea Complex—A Precursor to Metal Nitrides

Cited by 72 publications

References 28 publications

Synthesis of single-crystal nanoparticles of indium oxide by “urea glass” method and their electrochemical properties

Synthesis of single-crystal nanoparticles of indium oxide by “urea glass” method and their electrochemical properties

Nitrogen-rich transition metal nitrides

Aqueous Solution Processing of Combustible Precursor Compounds into Amorphous Indium Gallium Zinc Oxide (IGZO) Semiconductors for Thin Film Transistor Applications

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