Metal Organic Chemical Vapor Deposition of nickel oxide thin films for wide band gap device technology

Nigro, Raffaella Lo; Battiato, Sergio; Greco, Giuseppe; Fiorenza, Patrick; Roccaforte, Fabrizio; Malandrino, Graziella

doi:10.1016/j.tsf.2014.04.012

Cited by 31 publications

(24 citation statements)

References 41 publications

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“…NiO thin films have been prepared by various methods such as sputtering [18,19], sol gel [20], pulsed laser deposition [21,22], chemical vapor deposition [23,24], and spray pyrolysis [25,26]. Among these techniques, spray pyrolysis is the widely used; it is an attractive process to obtain thin films which requires low cost raw materials, adherent of deposits, very easy, safe and cheap.…”

Section: Introductionmentioning

confidence: 99%

Optical, Physical, Chemical and Electrical Properties of Nickel Oxide Sprayed Thin Films under Tin Doping Effects

Amor¹,

Hamzaoui²,

Boukhachem³

et al. 2015

Advances in Ceramic Science and Engineering

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Tin-doped nickel oxide thin films have been successfully prepared by spray pyrolysis technique on glass substrates at 460°C. The effects of tin doping on structural, optical, and electrical properties were investigated. X-ray diffraction pattern reveals that all prepared thin films have cubic structure with (111) preferred orientation. The surface topography of these films was performed by atomic force microscopy. Optical measurements show a high transparency in the visible range around 95%. The optical band gap Eg decreases with Sn content from 3.633 to 3.54 eV. PL measurements show some bands transition which shift irregularly with Sn doping. Finally, the electric conductivity of NiO thin film was investigated through the impedance spectroscopy measurements in the frequency range 5 Hz-13 MHz at various temperatures. These measurements show a thermally activation of the electric. AC conductivity of NiO thin films is investigated through Jonscher law. Also, from these measurements, dielectric parameters were calculated.

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Section: Introductionmentioning

confidence: 99%

Optical, Physical, Chemical and Electrical Properties of Nickel Oxide Sprayed Thin Films under Tin Doping Effects

Amor¹,

Hamzaoui²,

Boukhachem³

et al. 2015

Advances in Ceramic Science and Engineering

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“…But it was found experimentally that nickel oxide is an insulator with room-temperature conductivity σ of the order of 10 -14 Ωcm [3]. When NiO deviates from stoichiometric composition, either due to excess of oxygen or an doping, it becomes a semiconductor with σ varying from 10 -7 to 10 -1 Ωcm [4,5]. NiO has attracted attention because of its wide range of potential applications: in electrochromic devices, chemical sensors, dye sensitized solar cells, light-emitting diodes, as antiferromagnetic material, and etc.…”

Section: Introductionmentioning

confidence: 99%

“…NiO has attracted attention because of its wide range of potential applications: in electrochromic devices, chemical sensors, dye sensitized solar cells, light-emitting diodes, as antiferromagnetic material, and etc. [2,4,6,7]. A variety of NiO film deposition techniques has been investigated including sputtering, pulsed laser deposition, reactive evaporation, spray pyrolysis, thermal deposition, and metal-organic chemical vapor deposition (MOCVD) [1,4,8,[9][10][11].…”

Section: Introductionmentioning

confidence: 99%

“…[2,4,6,7]. A variety of NiO film deposition techniques has been investigated including sputtering, pulsed laser deposition, reactive evaporation, spray pyrolysis, thermal deposition, and metal-organic chemical vapor deposition (MOCVD) [1,4,8,[9][10][11]. As it has been reported [12] NiO films obtained are predominantly amorphous or randomly oriented polycrystalline.…”

Section: Introductionmentioning

confidence: 99%

“…Over the past years, several Ni precursors have been examined for the MOCVD of NiO films. Nickel carbonyl [Ni(CO) 4 ] was popular, but highly poisonous. It was reported that NiO layers have been deposited from Ni acetylacetonate [Ni(C 5 H 7 O 2 ) 2 ·H 2 O] under atmospheric pressure at higher than 520 K. But Fujii et al pointed out that the film could be deposited above 420 K only using plasma excitation.…”

Section: Introductionmentioning

confidence: 99%

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Kinetic study of MOCVD of NiO films from bis‐(ethylcyclopentadienyl) nickel

Kondrateva

Mishin

Шахмин

et al. 2015

Phys. Status Solidi C

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NiO films were grown by metal‐organic chemical vapor deposition (MOCVD) using bis‐(ethylcyclopentadienyl) nickel [(EtCp)2Ni] and oxygen or ozone as precursors. The kinetic regularities of MOCVD processes were experimentally studied in the deposition temperature range 600‐820 K for the reaction systems: (EtCp)2Ni–O2–Ar and (EtCp)2Ni–O3–O2–Ar. The results obtained show that the deposition processes in the temperature range 600‐700 K are controlled by kinetics and the value of activation energy of the processes is 80±5 kJ·mol−1 in both cases. The growth process in the temperature region 700–840 K is controlled by mass transport. An introduction of ozone in the reaction gas phase led to nearly twofold decrease of deposition rate probably because of homogeneous reactions with (EtCp)2Ni. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Spatially Confined Functionalization of Transparent NiO Thin Films with a Luminescent (1,10‐Phenanthroline)tris(2‐thenoyltrifluoroacetonato)europium Monolayer

et al. 2014

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Transparent MOCVD‐grown NiO films have been functionalized with the luminescent (1,10‐phenanthroline)tris(2‐thenoyltrifluoroacetonato)europium(III) complex [Eu(TTA)3phen] by combining sputter activation with a solution synthetic route. To introduce the Eu complex only on selected regions, some areas of the NiO surface were activated by Ar+ ion sputtering and then functionalized with 3‐phosphonopropionic acid (CPPA) followed by the anchoring of Eu(TTA)3phen through a ligand‐exchange reaction between β‐diketonato ligands and the carboxylic groups of CPPA. The functionalized material was characterized by X‐ray photoelectron, UV/Vis and luminescence spectroscopy. XPS measurements indicated that CPPA prefunctionalization and, in turn, the Eu(TTA)3phen anchoring occurs only on the sputter‐activated region, while no anchoring takes place on the unactivated surface. The optical properties of the Eu(TTA)3phen–NiO system were evaluated by UV/Vis and luminescence spectroscopy.

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Metal Organic Chemical Vapor Deposition of nickel oxide thin films for wide band gap device technology

Cited by 31 publications

References 41 publications

Optical, Physical, Chemical and Electrical Properties of Nickel Oxide Sprayed Thin Films under Tin Doping Effects

Optical, Physical, Chemical and Electrical Properties of Nickel Oxide Sprayed Thin Films under Tin Doping Effects

Kinetic study of MOCVD of NiO films from bis‐(ethylcyclopentadienyl) nickel

Spatially Confined Functionalization of Transparent NiO Thin Films with a Luminescent (1,10‐Phenanthroline)tris(2‐thenoyltrifluoroacetonato)europium Monolayer

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