Metal nanocrystal memories. I. Device design and fabrication

Liu, Z.; Lee, C.; Venkatasubramanian, N.; Pei, Guangsheng; Kan, Edwin C.

doi:10.1109/ted.2002.802617

Cited by 480 publications

(412 citation statements)

References 23 publications

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“…Normally a high temperature annealing process is applied to make gold nanoparticles. In this case, a thin gold layer can be converted to the gold nanoparticles due to the minimization of the surface energy [37]. By adopting this method, gold nanoparticle-based non-volatile memory devices can be fabricated.…”

Section: Operations Of Non-volatile Memory Devicesmentioning

confidence: 99%

“…However, floating-gate based flash memory has been reported to have limits in continuous device scaling due to increasing cell-to-cell interference, decreasing coupling ratio, non-scalable tunnelling oxide thickness, decreasing tolerance for charge loss, etc. Therefore, active research has been performed on flash memory devices with discrete charge trapping layers, such as silicon-oxide-nitride-oxide-silicon (SONOS) devices [29][30][31][32][33]25] or nanocrystal (NC)-based memory devices (nano-floating gate memory devices) [34][35][36][37][38]. Because of their better endurance, smaller chip size, and lower power consumption when compared with floating-gate devices, this technology is of great interest to the electronics industry.…”

Section: Introductionmentioning

confidence: 99%

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Recent progress in gold nanoparticle-based non-volatile memory devices

Jang‐Sik

2010

Gold Bull

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Recently, much progress has been made toward the fabrication of non-volatile memory devices based on metallic nanoparticles. Among the many kinds of nanoparticles, gold nanoparticles are some of the most widely used materials for charge trapping elements in non-volatile memory devices because they are chemically stable, easily synthesized, and have a high work function. Various synthesis methods have been applied to fabricate gold nanoparticle-based nonvolatile memory devices and recent progress indicates that gold is a very promising material for non-volatile memory applications. In this article, the recent advances in fabrication and characterization of gold nanoparticle-based nonvolatile memory devices, with an emphasis on flash memory-type memory devices, are reviewed. Detailed device fabrication, characterization, and future directions are reported based on the recent research activities and literature.

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Section: Operations Of Non-volatile Memory Devicesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Recent progress in gold nanoparticle-based non-volatile memory devices

Jang‐Sik

2010

Gold Bull

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“…T he ability to control and manipulate metal inclusions (for example, individual metal clusters) inside a solid-state medium will greatly expand the functions and create new classes of materials (for example, metamaterials) and devices for electronic, magnetic, photonic, chemical and optoelectronic applications [1][2][3][4][5][6] . Such abilities have been demonstrated, for example, with scanning tunneling microscopy tools 1 .…”

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confidence: 99%

Electrochemical dynamics of nanoscale metallic inclusions in dielectrics

et al. 2014

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Nanoscale metal inclusions in or on solid-state dielectrics are an integral part of modern electrocatalysis, optoelectronics, capacitors, metamaterials and memory devices. The properties of these composite systems strongly depend on the size, dispersion of the inclusions and their chemical stability, and are usually considered constant. Here we demonstrate that nanoscale inclusions (for example, clusters) in dielectrics dynamically change their shape, size and position upon applied electric field. Through systematic in situ transmission electron microscopy studies, we show that fundamental electrochemical processes can lead to universally observed nucleation and growth of metal clusters, even for inert metals like platinum. The clusters exhibit diverse dynamic behaviours governed by kinetic factors including ion mobility and redox rates, leading to different filament growth modes and structures in memristive devices. These findings reveal the microscopic origin behind resistive switching, and also provide general guidance for the design of novel devices involving electronics and ionics.

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“…9 Compared with ferroelectric polymer-based memory, devices using metal NPs as charge traps have an advantage that the trap density and distribution can be controlled by adjusting the density and location of the NPs during the NP formation process, by using ultrathin metallic films deposition or ion implantation techniques. 10,11 Recently, we reported a different structure of transistor memory device with remarkable memory window performance by placing silver NPs in between two pentacene layers. 12 A significant advantage of the structure is that it can eliminate the extra fabrication steps for the insulator layers as in the case of floating gate transistor memory structure, making it suitable for integrating with other electronic devices on the same substrate to form a circuit.…”

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confidence: 99%

Nonvolatile organic transistor-memory devices using various thicknesses of silver nanoparticle layers

Wang

Leung

Chan

2010

Applied Physics Letters

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We demonstrate the modification of the memory effect in organic memory devices by adjusting the thickness of silver nanoparticles ͑NPs͒ layer embedded into the organic semiconductor. The memory window widens with increasing Ag NPs layer thickness, a maximum window of 90 V is achieved for 5 nm Ag NPs and the on/off current ratio decreases from 10 5 to 10 when the Ag NPs layer thickness increases from 1 to 10 nm. We also compare the charge retention properties of the devices with different Ag NPs thicknesses. Our investigation presents a direct approach to optimize the performance of organic memory with the current structure. © 2010 American Institute of Physics. ͓doi:10.1063/1.3462949͔The advent of the nonvolatile flash memory has provided remarkable benefits for data storage in computers and other portable electronic devices. Due to the advantages of organic electronic devices over their inorganic counterparts such as the low fabrication costs, suitable for large area fabrication, and compatible with flexible substrates, 1,2 organic memory devices fabricated on flexible substrates have great potential for the next generation of nonvolatile flash memory. They can be further integrated with other electronic devices and form a flexible circuit. Recently a 26ϫ 26 array of organic flash memory transistors based on floating gate structure was demonstrated on flexible plastic sheets, and the operating voltage was as low as 6 V. 3 Currently, different approaches have been adopted to fabricate organic nonvolatile memory devices, such as using ferroelectric polymer dielectric materials 4,5 and chargeable gate dielectric in the organic field-effect transistors ͑OFETs͒. 6 In these devices, the memory effect arises from the field effect modulation by either the spontaneous polarization that occurs in ferroelectric, or through the trapping of charges in a chargeable layer of the dielectric. 7 Usually, the charge-trapping elements in the chargeable gate dielectric are nanoparticles ͑NPs͒ of metals such as Cr, 8 Au, 6 and Ag. 9 Compared with ferroelectric polymer-based memory, devices using metal NPs as charge traps have an advantage that the trap density and distribution can be controlled by adjusting the density and location of the NPs during the NP formation process, by using ultrathin metallic films deposition or ion implantation techniques. 10,11 Recently, we reported a different structure of transistor memory device with remarkable memory window performance by placing silver NPs in between two pentacene layers. 12 A significant advantage of the structure is that it can eliminate the extra fabrication steps for the insulator layers as in the case of floating gate transistor memory structure, making it suitable for integrating with other electronic devices on the same substrate to form a circuit. In the current work, we focused on investigating the performance variation in the pentacene OFET-based memory with different silver NP layer thickness. We also compared the memory window, on/off current ratio, and charge retention ...

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Metal nanocrystal memories. I. Device design and fabrication

Cited by 480 publications

References 23 publications

Recent progress in gold nanoparticle-based non-volatile memory devices

Recent progress in gold nanoparticle-based non-volatile memory devices

Electrochemical dynamics of nanoscale metallic inclusions in dielectrics

Nonvolatile organic transistor-memory devices using various thicknesses of silver nanoparticle layers

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