Metal-insulator transition in self-consistent localization theory with inclusion of electron-electron interaction effects

Kuchinskiǐ, É. Z.; Érkabaev, M. A.

doi:10.1134/1.1129845

Phys. Solid State

1997

DOI: 10.1134/1.1129845

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Metal-insulator transition in self-consistent localization theory with inclusion of electron-electron interaction effects

É. Z. Kuchinskiǐ

M. A. Érkabaev

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Cited by 3 publications

(5 citation statements)

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“…Recently we proposed [6,7] a theory of metal-insulator transitions which generalize the self-consistent theory of localization [8,9] taking into account the effects of electron-electron interaction. This approach has allowed us to study the behavior of the generalized diffusion coefficient for the wide interval of disorder parameter both for metallic and insulating regions.…”

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confidence: 99%

“…Equation ( 7) for T c was solved numerically for disorder parameter changing in wide interval both for metallic and insulating regions. The density of states was calculated taking into account lowest order corrections over electron-electron interaction [6,7]:…”

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confidence: 99%

“…Here D(ω) -is the generalized diffusion coefficient, which is determined from the following self-consistent nonlinear integral equation [6,7]: (10) where D 0 = E F / 3mγ -is the usual Drude diffusion coefficient, γ = 1/2τ -Born scattering rate, τ -mean free time, k 0 = min{p F , l −1 } -cut-off in the momentum space, p F -Fermi momentum, l -mean free path. The data on static conductivity used below were also obtained by numerical solution of Eq.…”

mentioning

confidence: 99%

“…The data on static conductivity used below were also obtained by numerical solution of Eq. ( 10) [6,7].…”

mentioning

confidence: 99%

“…[14] had presented the results of the measurements of disorder parameter (p F l) −1 for the amorphous alloy of InO x , as well as the data for T c and static conductivity close to the metal-insulator transition. According to our work [6,7] the static conductivity close to the metal-insulator transition can be expressed as:…”

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confidence: 99%

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Suppression of superconductivity close to the metal-insulator transition in strongly disordered systems

Kuchinskiǐ

Sadovskiǐ

Érkabaev

1997

J. Exp. Theor. Phys.

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On the basis of the recently proposed self-consistent theory of metal-insulator transition in strongly disordered systems, taking into account interaction effects, we study transition temperature T c suppression in disordered superconductors for the wide disorder interval -from weakly disordered metal up to Anderson insulator, induced by "Coulomb pseudogap" formation in the density of states. It is shown that for a number of systems this theory provides rather satisfactory fit of experimental data. PACS numbers: 71.30+h, 71.55.Jv, 72.15Rn, 74.20.Fg Typeset using REVT E X 1 The problem of degradation of superconducting transition temperature under strong disordering is relatively old [1]. It is closely connected with the question of superconductivity suppression due to disorder-induced metal-insulator transition [2]. A number of microscopic mechanisms of T c suppression were proposed, such as the growth of Coulomb pseudopotential [3,4], the influence of Coulomb corrections to the density of states [5] etc. In the majority of papers only small corrections to T c due to these effects were analyzed.Recently we proposed [6,7] a theory of metal-insulator transitions which generalize the self-consistent theory of localization [8,9] taking into account the effects of electron-electron interaction. This approach has allowed us to study the behavior of the generalized diffusion coefficient for the wide interval of disorder parameter both for metallic and insulating regions.These results were used in calculations of one-particle density of states with the account of interelectron interactions. These calculations demonstrate the formation and the growth of the "Coulomb pseudogap" in the density of states close to the Fermi level. In metallic region this behavior of the density of states corresponds to the usual square-root Altshuler-Aronov correction [10]. As disorder parameter grows and system moves towards the metalinsulator transition this pseudogap deepens, while the effective region of square-root behavior diminishes, and at the point of the metal-insulator transition the density of states at the Fermi level becomes equal to zero -we obtain a kind of a "Coulomb gap". In the insulating region, for the band of the finite width, we obtain the typical quadratic behavior of the density of states close to the Fermi level, reminiscent of the Coulomb gap due to Efros and Shklovskii [11], widening with the further growth of disorder. Such behavior of the density of states is in qualitative agreement with experiments on the number of disordered systems close to the metal-insulator transition [1], from amorphous alloys [12,13,15,16] to disordered single-crystals of metallic oxides, including high-temperature superconductors [17]. In this paper the results of these calculations of the density of states are used for the numerical study of "Coulomb gap" effects on the T c suppression for superconductors which are close to the metal-insulator transition.We shall analyze superconductivity within the framework of the simplest BCS-model....

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confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

“…The data on static conductivity used below were also obtained by numerical solution of Eq. ( 10) [6,7].…”

mentioning

confidence: 99%

mentioning

confidence: 99%

See 3 more Smart Citations

Suppression of superconductivity close to the metal-insulator transition in strongly disordered systems

Kuchinskiǐ

Sadovskiǐ

Érkabaev

1997

J. Exp. Theor. Phys.

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Generalized dynamical mean-field theory in the physics of strongly correlated systems

2012

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This review is devoted to generalization of dynamical mean-field theory (DMFT) for strongly correlated electronic systems towards the account of different types of additional interactions, necessary for correct physical description of many experimentally observed phenomena in such systems. As additional interactions we consider: (1) interaction of electrons with antiferromagnetic (or charge) fluctuations of order parameter in high-Tc superconductors leading to the formation of pseudogap state, (2) scattering of electrons on static disorder and its role in general picture of Anderson-Hubbard metal-insulator transition, (3) electron-phonon interaction and corresponding anomalies of electronic spectra in strongly correlated systems. Proposed DMFT+Σ approach is based on taking into account above mentioned interactions by introducing additional self-energy Σ (in general momentum dependent) into conventional DMFT scheme and calculated in a self-consistent way within the standard set of DMFT equations Here we formulate general scheme of calculation of both one-particle (spectral functions and densities of states) and two-particle (optical conductivity) properties. We examine the problem of pseudogap formation, including the Fermi arc formation and partial destruction of the Fermi surface, metal-insulator transition in disordered Anderson-Hubbard model, and general picture of kink formation within electronic spectra in strongly correlated systems.DMFT+Σ approach is generalized to describe realistic materials with strong electron-electron correlations based on LDA+DMFT method. General scheme of LDA+DMFT method is presented together with some of its applications to real systems. The LDA+DMFT+Σ approach is employed to modelling of pseudogap state of electron and hole doped high-T c cuprates. Comparison with variety of ARPES experiments is given.

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Generalized dynamical mean-field theory in the physics of strongly correlated systems

Kuchinskiǐ¹,

Некрасов²,

Sadovskiǐ³

2012

Uspekhi Fizicheskikh Nauk

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Metal-insulator transition in self-consistent localization theory with inclusion of electron-electron interaction effects

Cited by 3 publications

References 10 publications

Suppression of superconductivity close to the metal-insulator transition in strongly disordered systems

Suppression of superconductivity close to the metal-insulator transition in strongly disordered systems

Generalized dynamical mean-field theory in the physics of strongly correlated systems

Generalized dynamical mean-field theory in the physics of strongly correlated systems

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