2010
DOI: 10.1002/adfm.201000437
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Abstract: A systematic study of metal‐catalyzed etching of (100), (110), and (111) silicon substrates using gold catalysts with three varying geometrical characteristics: isolated nanoparticles, metal meshes with small hole spacings, and metal meshes with large hole spacings is carried out. It is shown that for both isolated metal catalyst nanoparticles and meshes with small hole spacings, etching proceeds in the crystallographically preferred <100> direction. However, the etching is confined to the single direction nor… Show more

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Cited by 59 publications
(64 citation statements)
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“…[18][19][20][21] However, BMS has been challenging for MaCE. 22 Recently, our group identified the transport of HF and h + to be the two critical processes for uniform…”
Section: Introductionmentioning
confidence: 99%
“…[18][19][20][21] However, BMS has been challenging for MaCE. 22 Recently, our group identified the transport of HF and h + to be the two critical processes for uniform…”
Section: Introductionmentioning
confidence: 99%
“…[13,29] On planar Si substrates, several research groups have recently successfully tailored the nanowires along the < 110 > directions by incorporating MACE into lithographic or nano-patterning processes for predefining metal catalysts. [33][34][35] However, the orientation-controlled formation of nanowires on non-planar substrates has yet to be reported. More critically, the aforementioned patterning methods are especially challenging on textured surfaces.…”
mentioning
confidence: 98%
“…Under such specific conditions, densely distributed Ag nuclei were formed on the exposed pyrami- dal surfaces throughout, and the strong polarizability interactions forced them to sink together along the vertical direction relative to the < 111 > planes. [33,34] These conclusions can be further supported by examining Ag nanoparticles formed at the nucleation stage (Figure 4 a and 4 b), in which the distinct distributions of Ag nuclei on the texturized surfaces contributed to the transition of the nanowire directions, as illustrated in Figure 4 c. In addition, an intermediate range of etching composition was found for the coexisting < 100 >-and < 111 >-orientated nanowires, when 1 ranged from 0.07 to 0.20 (Table 1).…”
mentioning
confidence: 98%
“…With the presence of h + , Si underneath the metal catalysts is etched by HF. MaCE for fabrication of HAR nanostructures on Si, such as nanowires, [9][10][11][12][13][14][15][16] nanogratings 17 and nanopores, 18 have been extensively studied. Recently, capability of MaCE in fabricating uniform micrometer-scale HAR structures was demonstrated.…”
mentioning
confidence: 99%