volume 15, issue 1-2, P283-285 2001
DOI: 10.1016/s0928-4931(01)00220-x
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Isodiana Crupi, Salvatore Lombardo, Corrado Spinella, Cosimo Gerardi, Barbara Fazio, Michele Vulpio, Massimo Melanotte, Yougui Liao, Corrado Bongiorno

Abstract: To form crystalline Si dots embedded in SiO2, we have deposited thin films of silicon-rich oxide (SRO) by plasma-enhanced chemical vapor deposition of SiH4 and O2. Then the materials have been annealed in N2 ambient at temperatures between 950°C and 1100°C. Under such processing, the supersaturation of Si in the amorphous SRO film produces the formation of crystalline Si dots embedded in SiO2. The narrow dot size distributions, analyzed by transmission electron microscopy, are characterized by average grain ra…

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