Melt growth and characterization of Mg2Si bulk crystals

Tamura, Daiki; Nagai, Ryo; Sugimoto, Kazuhiro; Udono, Haruhiko; Kikuma, Isao; Tajima, Hiroyuki; Ohsugi, Isao J.

doi:10.1016/j.tsf.2007.02.065

Cited by 82 publications

(63 citation statements)

References 14 publications

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“…7 Mg 2 Si has recently attracted renewed interest due to remarkable thermoelectric properties for high temperature applications, especially in solid solution with Mg 2 Sn. In particular, the figure of merit of Mg 2 Si x Sn 1-x reaches ZT=1.1 at 800 K. 8 This material has other potential applications, such as near-infrared optoelectronics 9 . Mg 2 Ge and Mg 2 Sn can form a solid solution with each other and with Mg 2 Si, thus allowing systematic modification of their properties.…”

Section: Introductionmentioning

confidence: 99%

Anharmonic properties inMg2X(X=C,Si
Chernatynskiy
¹
,
Phillpot
²

2015
Phys. Rev. B
18
2
8
0
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Thermal conductivity reduction is one of the potential routes to improve the performance of thermoelectric materials. However detailed understanding of the thermal transport of many promising materials is still missing. In this work we employ electronic-structure calculations at the level of density functional theory to elucidate thermal transport properties of the Mg 2 X (X=C, Si, Ge, Sn and Pb) family of compounds, which includes Mg 2 Si, a material already identified as a potential thermoelectric. All these materials crystallize into the same antifluorite structure. Systematic trends in the anharmonic properties of these materials are presented and examined. Our calculations indicate that the reduction in the group velocity is the main driver of the thermal conductivity trend in these materials, as the phonon lifetimes in these compounds are very similar. We also examine the limits of the applicability of perturbation theory to study the effect of point defects on thermal transport, and find that it is in good agreement with experiment in wide range of scattering parameter value. The thermal conductivity of the recently synthesized Mg 2 C is computed for the first time and predicted to be 34 W/mK at 300 o C.2

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Section: Introductionmentioning

confidence: 99%

Anharmonic properties inMg2X(X=C,Si
Chernatynskiy
¹
,
Phillpot
²

2015
Phys. Rev. B
18
2
8
0
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“…EELS spectra with strong bulk (13.6 eV) and surface (10.2 eV) plasmons of Mg 2 Si without peak of Si bulk plasmon (Fig. 2, blue line) o C results in appreciable decrease of Raman peak intensity for Mg 2 Si that corresponds to the weak crystallization of the embedded Mg silicide layer during long Si growth (30 minutes) as compared the same growth at 180 o C. In the reflectance spectra of the samples with Si top layer thickness not more than 9 nm a strong peak with 2.6-2.8 eV appeared that corresponds to the first direct transition in Mg 2 Si [11]. Therefore, we can say the Mg 2 Si is conserved under the Si cap layer in good quality crystalline form at Si cap growth at 180 o C. In the TEM cross-section image (Fig.…”

Section: Methodsmentioning

confidence: 95%

“…1 Introduction Magnesium silicide (Mg 2 Si) is a narrow band gap semiconductor with band gap of 0.6 -0,77 eV [1,2]. It has a face-centered cubic structure (CaF 2 -type lattice) similar to Si, but with a larger lattice parameter (a=0.6531 nm [1]).…”

mentioning

confidence: 99%

Growth, structure, optical and electrical properties of Si/2D Mg₂Si/Si(111) double heterostructures and Schottky diodes on their base

Galkin

Dózsa

Dotsenko

et al. 2013

Phys. Status Solidi C

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Mg2Si layers were grown on silicon by RDE at 150 °C and by SPE at 160 °C, and they were covered by silicon cap grown by MBE at 150‐180 °C. The silicide layers and the silicon cap were investigated by in situ and ex situ methods. The 2D Mg2Si layer continuity and electrical properties were conserved during cap growth. The point defects in the structure are dominated by contamination of the substrate and by diffusion of the not reacted Mg into silicon. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Magnesium half silicide (Mg2Si) is an indirect gap type semiconductor with the band gap energy of about 0.6 eV at room temperature [6][7][8]. The band gap energy is able to control as far as 0.3 eV by making alloy compound with Mg2Si and Mg2Sn [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Observation of pn-junction depth in Mg₂Si diodes fabricated by short period thermal annealing

Onizawa¹,

Akiyama²,

Nobuhiko³

et al. 2017

Proc. Asia-Pacific Conf. On Semiconducting Silicides and Related Materials 2016

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We have fabricated Mg2Si pn-junction diodes by short-period (30 sec and 1 min) annealing between 400 ℃ and 480 ℃ and evaluated the pn-junction depth by EBIC and VC observations. The pn-junction depth of approximately 6 and 30 µm was formed for the annealing conditions of 400 ℃, 30sec and 480 ℃, 1min, respectively. By comparing the Ag depth profiles determined by SIMS, we estimated the activation ratio at the pn-junction of approximately 8 and 10 % for annealing at 450 ℃ and 480 ℃, respectively. All diodes showed clear rectifying behavior in J-V characteristic and the spectral photosensitivity below approximately 1.8 µm under zero bias condition.

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Melt growth and characterization of Mg2Si bulk crystals

Cited by 82 publications

References 14 publications

Anharmonic properties inMg2X(X=C,Si
Chernatynskiy
¹
,
Phillpot
²

2015
Phys. Rev. B
18
2
8
0
View full text Add to dashboard Cite

Anharmonic properties inMg2X(X=C,Si
Chernatynskiy
¹
,
Phillpot
²

2015
Phys. Rev. B
18
2
8
0
View full text Add to dashboard Cite

Growth, structure, optical and electrical properties of Si/2D Mg₂Si/Si(111) double heterostructures and Schottky diodes on their base

Observation of pn-junction depth in Mg₂Si diodes fabricated by short period thermal annealing

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Melt growth and characterization of Mg2Si bulk crystals

Cited by 82 publications

References 14 publications

Anharmonic properties inMg2X(X=C,SiChernatynskiy1, Phillpot2 2015Phys. Rev. B18280View full textAdd to dashboardCite

Anharmonic properties inMg2X(X=C,SiChernatynskiy1, Phillpot2 2015Phys. Rev. B18280View full textAdd to dashboardCite

Growth, structure, optical and electrical properties of Si/2D Mg2Si/Si(111) double heterostructures and Schottky diodes on their base

Observation of pn-junction depth in Mg2Si diodes fabricated by short period thermal annealing

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Anharmonic properties inMg2X(X=C,Si
Chernatynskiy
¹
,
Phillpot
²

2015
Phys. Rev. B
18
2
8
0
View full text Add to dashboard Cite

Anharmonic properties inMg2X(X=C,Si
Chernatynskiy
¹
,
Phillpot
²

2015
Phys. Rev. B
18
2
8
0
View full text Add to dashboard Cite

Growth, structure, optical and electrical properties of Si/2D Mg₂Si/Si(111) double heterostructures and Schottky diodes on their base

Observation of pn-junction depth in Mg₂Si diodes fabricated by short period thermal annealing