Mechanical modeling of flexible OLED devices

Chiang, Chien-Jung; Winscom, Chris; Bull, Steve; Monkman, A. P.

doi:10.1016/j.orgel.2009.07.003

Cited by 98 publications

(58 citation statements)

References 9 publications

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“…Figure 2 shows the load-indentation data for a depth-sensing indentation experiment. The measured elastic moduli for each material are shown in Table 1, and these values are similar to the previous results [6,20,21]. The Poisson ratios of each material were obtained from the results of previous researches [22-25].…”

Section: Resultssupporting

confidence: 80%

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Bendability optimization of flexible optical nanoelectronics via neutral axis engineering

et al. 2012

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The enhancement of bendability of flexible nanoelectronics is critically important to realize future portable and wearable nanoelectronics for personal and military purposes. Because there is an enormous variety of materials and structures that are used for flexible nanoelectronic devices, a governing design rule for optimizing the bendability of these nanodevices is required. In this article, we suggest a design rule to optimize the bendability of flexible nanoelectronics through neutral axis (NA) engineering. In flexible optical nanoelectronics, transparent electrodes such as indium tin oxide (ITO) are usually the most fragile under an external load because of their brittleness. Therefore, we representatively focus on the bendability of ITO which has been widely used as transparent electrodes, and the NA is controlled by employing a buffer layer on the ITO layer. First, we independently investigate the effect of the thickness and elastic modulus of a buffer layer on the bendability of an ITO film. Then, we develop a design rule for the bendability optimization of flexible optical nanoelectronics. Because NA is determined by considering both the thickness and elastic modulus of a buffer layer, the design rule is conceived to be applicable regardless of the material and thickness that are used for the buffer layer. Finally, our design rule is applied to optimize the bendability of an organic solar cell, which allows the bending radius to reach about 1 mm. Our design rule is thus expected to provide a great strategy to enhance the bending performance of a variety of flexible nanoelectronics.

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Section: Resultssupporting

confidence: 80%

“…To improve the bendability of flexible nanoelectronics, a buffer layer has been adopted [3,6,9,15]. Researchers have reported that the mechanical bendability of electronic nanodevices can be increased by using a buffer layer above or below the ITO layer.…”

Section: Introductionmentioning

confidence: 99%

Bendability optimization of flexible optical nanoelectronics via neutral axis engineering

et al. 2012

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“…Note that similar electrical results (not shown) have been obtained when strain is applied along the source-drain direction. Figure 6 calculated by the mechanical modeling of multi-layers for flexible devices, 11 are 0.09%, 0.24%, and 0.49%, respectively. The slight difference between the four current-voltage curves suggests that HEMT-FS static characteristics are weakly affected by the bending conditions.…”

mentioning

confidence: 99%

Electrical characterization of In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate under mechanical bending conditions

Shi

Wichmann

Roelens

et al. 2013

Applied Physics Letters

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Articles you may be interested inMicrowave performance of 100nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate Appl. Phys. Lett. 99, 203505 (2011); 10.1063/1.3663533 Fermi energy pinning at the surface of high mobility In 0.53 Ga 0.47 As ∕ In 0.52 Al 0.48 As modulation doped field effect transistor structures Appl. Phys. Lett. 90, 133506 (2007); 10.1063/1.2716844 Molecular beam epitaxy growth of In 0.52 Al 0.48 As ∕ In 0.53 Ga 0.47 As metamorphic high electron mobility transistor employing growth interruption and in situ rapid thermal annealing Appl. Phys. Lett. 88, 132108 (2006); 10.1063/1.2189607Rapid thermal annealing effects on step-graded InAlAs buffer layer and In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As metamorphic high electron mobility transistor structures on GaAs substrates

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“…7), the minimum radius of curvature applied is 15mm. To analyze the strain applied for each bending curvature, the model solution by described in [10] is used. The measurements are made using 2 supports with radius curvature of 15 mm strain ሺ ൌ ͲǤͷΨሻ and 25 mm ሺ ൌ ͲǤʹͷΨሻǤ One can see a negligible difference when bending the device.…”

Section: B Bended Measurementsmentioning

confidence: 99%

Inkjet printed flexible transmission lines for high frequency applications up to 67 GHz

Belhaj

Wei

Pallecchi

et al. 2014

2014 44th European Microwave Conference

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This letter introduces radio frequency(RF) characterization of ink-jet printed coplanar waveguides (CPW) with and without strain. Kapton is selected as flexible substrate with different sintering temperature. With optimized inkjet printing parameters, well defined patterns with high resolution yield low attenuation constant even when operated up to 67GHz. Finally, we demonstrate that the RF performance of CPW is barely affected by bending.

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Mechanical modeling of flexible OLED devices

Cited by 98 publications

References 9 publications

Bendability optimization of flexible optical nanoelectronics via neutral axis engineering

Bendability optimization of flexible optical nanoelectronics via neutral axis engineering

Electrical characterization of In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate under mechanical bending conditions

Inkjet printed flexible transmission lines for high frequency applications up to 67 GHz

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