Measuring Thermal Resistance of GaN HEMTs Using Modulation Method

Смирнов, В.И.; Сергеев, В. А.; Gavrikov, A.A.; Kulikov, Alexander A.

doi:10.1109/ted.2020.3013509

Cited by 9 publications

(4 citation statements)

References 13 publications

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“…) where P avaverage delivered power; P varpeak-to-peak amplitude of the variable component of the supplied power [23].…”

Section: Fig2 Comb Type Mechanical Thickness Gauge [6]mentioning

confidence: 99%

Thermoelectric Monitoring of Thermal Resistance in Electronic Systems

Abouellail

2023

Eurasian phys. tech. j.

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The article proposes to apply the method of thermoelectric testing to determine the thermophysical parameters of the thermal interface. A thermal interface is located between metal surfaces, between which, thermoelectromotive force occurs during heating at any stage of the device operation. The obtained graphs of the temperature difference dependence on the heating time, measured by thermocouples, and measured using thermoelectromotive force confirm the accuracy of the thermoelectric method of testing. Graphs visualize the heat transfer process with thermal resistance variation, temperature fluctuations and the resulting thermoelectromotive force. The proposed method makes it possible to monitor thermal resistance with an error of less than 8 %.

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“…) where P avaverage delivered power; P varpeak-to-peak amplitude of the variable component of the supplied power [23].…”

Section: Fig2 Comb Type Mechanical Thickness Gauge [6]mentioning

confidence: 99%

Thermoelectric Monitoring of Thermal Resistance in Electronic Systems

Abouellail

2023

Eurasian phys. tech. j.

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“…HERE are several techniques for measuring the thermal resistance, R th , of GaN high-electron mobility transistors (HEMTs), such as pulsed characteristics [1], [2], step response [3], infrared and Raman thermography [4], [5], and AC conductance method [6]. Temperature-sensitive electrical parameters (TSEPs), such as the forward voltage drop between the gate and source [7], the channel ON-resistance [7], [8], the saturation drain current [9], and the gate metal resistance [10], [11], have also been used to extract the R th of HEMTs.…”

Section: Introductionmentioning

confidence: 99%

“…Knowing that the de-trapping time is very sensitive to temperature (one order of magnitude for a 40 °C swing) [12]− [17], the main objective of this work is to take advantage of this feature and develop a simple and fast but precise thermo-electrical method, using easily accessible equipment in most RF laboratories, to extract the thermal resistance of HEMTs from pulse recovery data. Moreover, contrary to other simpler methodologies [1]− [3], [6], [8], [9], the proposed method does not require any separation of thermal and trapping effects. It can be applied to extract the thermal resistance of packaged devices, by simply mounting them on thermal stages and automatically repeating the procedure.…”

Section: Introductionmentioning

confidence: 99%

A Simple Method to Extract the Thermal Resistance of GaN HEMTs From De-Trapping Characteristics

González

Nunes

Gomes

et al. 2023

IEEE Electron Device Lett.

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This paper proposes a new method for extracting the thermal resistance of GaN-based HEMTs using pulse recovery data. After the device temperature and trapping state are established from different quiescent power dissipations for several base-plate temperatures, the recovery profile of the drain current is measured. The recovery time is then used as a temperature-sensitive electrical parameter to extract the thermal resistance of the device. The proposed method has been applied to a Schottky-gate HEMT on SiC, for which a thermal resistance of 15.7 °C-mm/W was extracted, a value in good agreement with others reported for similar devices. Comparison with the one obtained from a step response is also done. Finally, the uncertainties of the proposed method related to the pulse width, temperature, percentage of the drain current recovery time, and averaging procedure are discussed.

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“…For SOI MOSFETs, several precise techniques have been developed to measure the thermal resistance, which are mainly based on the ac conductance method [9]- [11] and pulsed characteristics [12], [13]. Similarly, for GaN-based high-electronmobility transistors (HEMTs) pulsed characteristics [14], [15] have successfully been used to extract the thermal resistance, in addition to techniques such as step response [16], IR and Raman thermographs [17], or by extraction of a traps activation energy [18]. The IR thermograph is inaccurate when measuring devices with micrometer or sub-micrometer scale feature sizes.…”

Section: Introductionmentioning

confidence: 99%

RF Extraction of Thermal Resistance for GaN HEMTs on Silicon

González

Lázaro

Rodríguez

2022

IEEE Trans. Electron Devices

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In this article, an ac conductance method has been successfully employed to extract the thermal resistance of GaN-based high-electron-mobility transistors (HEMTs) on silicon. The resulting thermal resistances, when varying the channel length and gate width, are comparable to those obtained with pulsed measurements, by making use of positive drain-to-source pulsed voltages from a zero power dissipation quiescent bias point and 3-D thermal simulations. Furthermore, the gate geometry dependence of the thermal resistance of GaN-based HEMTs has been successfully modeled for circuit-design purposes.

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Measuring Thermal Resistance of GaN HEMTs Using Modulation Method

Cited by 9 publications

References 13 publications

Thermoelectric Monitoring of Thermal Resistance in Electronic Systems

Thermoelectric Monitoring of Thermal Resistance in Electronic Systems

A Simple Method to Extract the Thermal Resistance of GaN HEMTs From De-Trapping Characteristics

RF Extraction of Thermal Resistance for GaN HEMTs on Silicon

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