Measurements of energy spectra of extended defects

Abstract

The density of states of two different dislocation types in silicon has been studied by computer modelling and fitting to available deep-level transient spectroscopic data. Our preliminary fit results indicate that one type, which is a dislocation bounding thin platelets consisting of two NiSi 2 (111) planes and supposed to be free of jogs, kinks, reconstruction defects and also point defect decoration, is associated with a one-dimensional band of states in the middle of the bandgap, 0.3 eV wide and with an electron occupation of 0.3 in the neutral state. Two fit parameters are not consistent with independent results and require the potential drop along the platelet to be incorporated in our model. For dislocations that move from a scratch under an applied stress at high temperatures, our fits, possible at present to only some of the data, show the existence of point defect clouds in the dislocation strain field and indicate the existence of core defects.

Correlation of electrical and luminescence properties of a dislocation network with its microscopic structure

“…3. Difficulties and uncertainties in the quantitative interpretation of the DLTS spectra from the traps related to extended defects are widely known (see [15] and references therein). In the case of DN, the task is further hampered by the links between the extended defects forming a complete plane with specific properties.…”

Deep-Level Defects in MBE-Grown GaN-Based Laser Structure

“…This analysis allowed us to specify the type of electronic states associated with dislocations, which, owing to translational symmetry along dislocation lines, are expected to form one--dimensional energy bands rather than isolated localized electron states. According to the model recently proposed by Schröter et al [7,8], which takes into account the rate, at which the states reach their internal electron equilibrium within the band, they can be classified as either so-called localized or band-like states. The both types of states are characterized by a linear dependence of their DLTS-line amplitude on the logarithm of the filling time.…”

Annealing effects on recombinative activity of nickel at direct silicon bonded interface

“…3 Electrical and chemical characteristics of nickel at extended defects like dislocations and GBs have been investigated for decades. [4][5][6][7][8] A major difficulty in the investigation of a metal at GBs lies in distinguishing between the effects of the metal and those of the GB. The interface in direct silicon bonded (DSB) wafers is considered an ideal GB.…”