Measurement of the Auger Recombination Rate in p-type 0.54-eV GaInAsSb by Time-Resolved Photoluminescence

Аникеев, С. Г.; Donetsky, D.; Belenky, Gregory; Luryi, Serge; Wang, C.A.; Borrego, J.M.; Nichols, G.

doi:10.2172/821378

Cited by 18 publications

(26 citation statements)

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“…Some suggested that non-radiative Auger recombination is the most detrimental mechanism which limits the performance of the low band-gap longwavelength semiconductor lasers. [19][20][21][22] On the other hand, Shterengas et al 23,24 and Rain o et al 25 reported that thermally induced hole escape is the main non-radiative process which deteriorates the optical properties and performances of the GaSb-based devices at elevated temperature.…”

Section: Introductionmentioning

confidence: 99%

Carrier dynamics and photoluminescence quenching mechanism of strained InGaSb/AlGaSb quantum wells

Jahan

Hermannstädter

Sasakura

et al. 2013

Journal of Applied Physics

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GaSb based quantum wells (QWs) show promising optical properties in near-infrared spectral range. In this paper, we present photoluminescence (PL) spectroscopies of In x Ga 1Àx Sb/Al y Ga 1Ày Sb QWs and discuss the possible thermal quenching and non-radiative carrier recombination mechanisms of the QW structures. The In and Al concentrations as well as the QW thicknesses were precisely determined with the X-ray diffraction measurements. Temperature dependent time-integrated and time-resolved PL spectroscopies resulted in the thermal activation energies of $45 meV, and the overall self-consistent calculation of the band parameters based on the measured physical values confirmed that the activation energies are due to the hole escape from the QW to the barriers. The relation of the present single carrier escape mechanism with the other escape mechanisms reported with other material systems was discussed based on the estimated band offset. The relation of the present thermal hole escape to the Auger recombination was also discussed. V C 2013 American Institute of Physics. [http://dx

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Section: Introductionmentioning

confidence: 99%

Carrier dynamics and photoluminescence quenching mechanism of strained InGaSb/AlGaSb quantum wells

Jahan

Hermannstädter

Sasakura

et al. 2013

Journal of Applied Physics

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“…5a consists of a 0. The structure of lifetime samples grown at 525 °C in the present study is contrasted with that grown in previous studies [6,21], and the structure is schematically shown in Fig. 5b.…”

Section: Surface Recombination Velocity Of Gainassb/(al)ga(as)sb Doubmentioning

confidence: 70%

Section: Surface Recombination Velocity Of Gainassb/(al)ga(as)sb Doubmentioning

confidence: 72%

“…This approximation assumes that photon recycling effects are negligible and that S is relatively small compared to the ratio of minority carrier diffusion constant D to W (S<D/W). These approximations are reasonable when W < ~0.5 µm [21].Thus, S can be determined from measurements of τ PL for samples with various thicknesses.AlGaAsSb/GaInAsSb/AlGaAsSb DHs with varying GaInAsSb thicknesses were grown at 525 °C. The layer structure, schematically shown in Fig.…”

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confidence: 89%

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Effect of Growth Interruption on Surface Recombination Velocity in GaInAsSb/AlGaAsSb Heterostructures Grown by Organometallic Vapor Phase Epitaxy

Ca¹,

Shiau²,

Donetsky³

et al. 2004

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The effects of growth interruption on the quality of GaInAsSb/AlGaAsSb heterostructures grown by organometallic vapor phase epitaxy are reported. In-situ reflectance monitoring and ex-situ characterization by high-resolution x-ray diffraction, 4K photoluminescence (PL), and time-resolved PL indicate that GaInAsSb is extremely sensitive to growth interruption time as well as the ambient atmosphere during interruption. By optimizing the interruption sequence, surface recombination velocity as low as 20 cm/s was achieved for GaInAsSb/AlGaAsSb double heterostructures. IntroductionThe performance of minority carrier devices such as light-emitting diodes, photovoltaics, and heterojunction bipolar transistors is sensitive to non-radiative recombination at heterointerfaces, and numerous studies aimed at minimizing surface recombination velocity have been reported for heterostructures comprised of GaAs-and InP-based III-V alloys [1]. More recently, III-V materials based on GaSb are being developed for optoelectronic devices operating in the midinfrared wavelength range [2]. For example, GaInAsSb/GaSb and GaInAsSb/AlGaAsSb heterostructures are of particular interest since these alloys show great potential for thermophotovoltaic (TPV) devices used to generate power from a thermal source [3]. It was reported that both GaSb and AlGaAsSb window layers are effective in reducing GaInAsSb surface recombination [4,5]. Either of these layers was shown to improve the external quantum efficiency and open-circuit voltage V oc of GaInAsSb TPV cells, which were grown by organometallic vapor phase epitaxy (OMVPE). Furthermore, device performance of TPV structures with an AlGaAsSb window is anticipated to be better compared to that with a GaSb window. GaInAsSb/AlGaAsSb/GaSb TPV cells exhibit peak internal quantum efficiency and fill factor values exceeding 94% and 70%, respectively [7,8]. These values, which are approaching theoretical limits, are achieved for structures grown with either type of window layer. The highest reported value of V oc , however, is 0.33 V and was measured for devices with an AlGaAsSb window [7]. Since this value is only about 85% of the theoretical limit, further increases in V oc should be possible. In principle, if the interface between GaInAsSb and AlGaAsSb can be improved to lower surface recombination velocity, then V oc should increase, and thus improve overall TPV cell performance.The quality of heterointerfaces in Sb-containing alloys is extremely sensitive to growth sequences, and interruptions during OMVPE growth were reported to alter the interface chemistry, degrade the interface structure, and affect device performance [9][10][11][12][13]. This paper reports the effects of interruption on the quality of GaInAsSb/(Al)Ga(As)Sb doubleheterostructures (DHs) grown by OMVPE, and the achievement of extremely low surface recombination velocity in GaInAsSb/AlGaAsSb DHs. Both the interruption time and ambient atmosphere significantly impact the stability of the GaInAsSb surface. Surface recombination...

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“…Recently we developed time-resolved photoluminescence (TRPL) for lifetime measurements in mid-IR materials [8][9]. The carrier lifetime was determined from PL kinetic after short pulse excitation, The PL decay constant is known as the dynamic lifetime.…”

Section: Experimental Approachmentioning

confidence: 99%

Analysis of Recombination Processes in 0.5-0.6 eV Epitaxial GaInAsSb Lattice-matched to GaSb

Donetsky¹,

Anikeev²,

Gu³

et al. 2004

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Abstract. This work sununanzes recent data on minority carrier lifetime in n-and p-type double heterostructures (DHs) of 0.5-0.6 eV GalnAsSb confined with GaSb and AIGaAsSb cap layers. Recombination times were measured by time-resolved photoluminescence (TRPL) and by optical frequency response (OFR) to sinusoidal excitation. It was shown that one of the mechanisms responsible for interface recombination in GaSb/GalnAsSb/GaSb DHs is thermionic emission of carriers over the heterobarrier. Considerable improvement of carrier confinement was obtained with I eV AIGaAsSb cap layers. Optimization of the epitaxial growth resulted in a recombination velocity at GalnAsSb/ AIGaAsSb interface as low as 30 crn/s.

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Measurement of the Auger Recombination Rate in p-type 0.54-eV GaInAsSb by Time-Resolved Photoluminescence

Cited by 18 publications

References 0 publications

Carrier dynamics and photoluminescence quenching mechanism of strained InGaSb/AlGaSb quantum wells

Carrier dynamics and photoluminescence quenching mechanism of strained InGaSb/AlGaSb quantum wells

Effect of Growth Interruption on Surface Recombination Velocity in GaInAsSb/AlGaAsSb Heterostructures Grown by Organometallic Vapor Phase Epitaxy

Analysis of Recombination Processes in 0.5-0.6 eV Epitaxial GaInAsSb Lattice-matched to GaSb

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