Measurement of resistance and spin-memory loss (spin relaxation) at interfaces using sputtered current perpendicular-to-plane exchange-biased spin valves

Spin Torque Study of the Spin Hall Conductivity and Spin Diffusion Length in Platinum Thin Films with Varying Resistivity

“…Two common methods to quantify the strength of the SHE are to employ ferromagnet/normal metal (FM/NM) bilayers and either (1) detect the spin transfer torque that the SHE-induced spin current from the NM layer exerts on the magnetization of the adjacent FM layer [19,20], or (2) use spin pumping to inject a spin current from the FM to the NM and detect the electric current in the NM layer that is induced by the inverse SHE (ISHE) [21][22][23]. In the former case due to spin backflow (SBF) at the FM/NM interface [24,25] and/or enhanced spin scattering at the interface (spin memory loss or SML) [26], only a portion NM|FM [19,[27][28][29][30][31], beta-Ta [19] and beta-W [4].…”

A study of spin–flipping in sputtered IrMn using Py-based exchange-biased spin-valves

“…Theory. From Valet-Fert (VF) theory of CPP-MR [5,[8][9][10], as the thickness t IrMn of the IrMn insert grows, AΔR should decrease as in Eq. (1), where the IrMn/Cu interface is assumed to have finite thickness, t I ~ 0.6-0.8 nm [11].…”

A way to measure electron spin-flipping at ferromagnetic/nonmagnetic interfaces and application to Co/Cu

“…[1] gave a general technique for measuring the spin-flipping probability at non-magnetic (N1/N2) interfaces, P N1/N2 , and its related parameter δ N1/N2 given by P N1/N2 = 1 -exp (-δ N1/N2 ). That technique has been used to obtain values of δ N1/N2 for a number of sputtered N1/N2 pairs [1,2]. It involves inserting an [N1/N2] n multilayer (n = number of repeats) into the middle of the central Cu layer of a Permalloy (Py = Ni 1-x Fe x with x ~ 0.2) based exchangebiased spin-valve (EBSV).…”