Measurement of output voltage of aluminum nitride thin film as a pressure sensor at high temperature

Kishi, Kazushi; Ooishi, Yasunobu; Noma, Hiroaki; Ushijima, Eizo; Ueno, Naohiro; Akiyama, Morito; Tabaru, Tatsuo

doi:10.1016/j.jeurceramsoc.2005.08.011

Cited by 14 publications

(5 citation statements)

References 5 publications

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“…AlN has been studied in view of direct pressure sensing, both utilizing the voltage and charge (current) as sensor signal (Ooishi et al 2005;Akiyama et al 2006;Kishi et al 2006). Fig.…”

Section: Sensitivity For Direct Usementioning

confidence: 99%

Thin-film electro-acoustic sensors based on AlN and its alloys: possibilities and limitations

Wingqvist

2012

Microsyst Technol

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Sputter deposited aluminum nitride (AlN) thin films have played a central role for the successful development of the thin film electro-acoustic technology. The development has been primarily driven by one device-the thin film bulk acoustic resonator, with its primary use for high frequency filter applications for the telecom industry. Recently, increased piezoelectric properties in AlN through the alloying with scandium nitride have been identified both experimentally and theoretically. This opens up new possibilities for the thin film electro-acoustic technology.Here expectations and discussions are presented on acoustic FBAR sensor performance when based on AlN as well as on such AlN alloys to identify possible benefits and limitations. Inhere, the distinction is made between direct and in-direct (acoustic) use of the piezoelectric effect for sensor applications. These two approaches are described and compared in view of their advantages and possibilities. Especially, the indirect (or acoustic) use is identified as interesting for its versatility and good exploitation of the thin film technology to obtain highly sensitive sensor transducers. It is pointed out that the indirect approach can well be obtained internally in the piezoelectric material structure. Original calculations are presented to support the discussion.

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“…AlN has been studied in view of direct pressure sensing, both utilizing the voltage and charge (current) as sensor signal (Ooishi et al 2005;Akiyama et al 2006;Kishi et al 2006). Fig.…”

Section: Sensitivity For Direct Usementioning

confidence: 99%

Thin-film electro-acoustic sensors based on AlN and its alloys: possibilities and limitations

Wingqvist

2012

Microsyst Technol

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“…As earlier mentioned AlN has been studied in view of direct pressure sensing, both utilizing the voltage and charge (current) as sensor signal [27][28][29] . AlN's piezoelectric constant in charge format along the c-axis (d 33 ) typically is in the range of 5pC/N and with a relative dielectric constant (ε 33 ) of just below 10 the piezoelectric constant in voltage format (g 33 =d 33 /ε 33 ) is about 50mVm/N.…”

Section: For Direct Usementioning

confidence: 99%

Electro-acoustic sensors based on AlN thin film: possibilities and limitations

Wingqvist

2011

SPIE Proceedings

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The non-ferroelectric polar wurtzite aluminium nitride (AlN) material has been shown to have potential for various sensor applications both utilizing the piezoelectric effect directly for pressure sensors or indirectly for acoustic sensing of various physical, chemical and biochemical sensor applications. Especially, sputter deposited AlN thin films have played a central role for successful development of the thin film electro-acoustic technology. The development has been primarily driven by one device -the thin film bulk acoustic resonator (FBAR or TFBAR), with its primary use for high frequency filter applications for the telecom industry. AlN has been the dominating choice for commercial application due to compatibility with the integrated circuit technology, low acoustic and dielectric losses, high acoustic velocity in combination with comparably high (but still for some applications limited) electromechanical coupling. Recently, increased piezoelectric properties (and also electromechanical coupling) in the AlN through the alloying with scandium nitride (ScN) have been identified both experimentally and theoretically. Inhere, the utilization of piezoelectricity in electro-acoustic sensing will be discussed together with expectation on acoustic FBAR sensor performance with variation in piezoelectric material properties in the parameter space around AlN due to alloying, in view of the Sc x Al 1-x N (0

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“…[ 14 ] As a nonferroelectric material, the piezoelectricity of AlN is limited by the critical temperature at which the chemical bonds break down, rather than by the Curie point. [ 15 ] AlN has been reported to maintain its piezoelectricity at temperatures up to 1150 °C. [ 16 ] When scandium (Sc) is added to AlN, the piezoelectric coefficient gradually increases with the Sc concentration up to ≈40%, from ≈5pCN −1 up to ≈25pCN −1 .…”

Section: Introductionmentioning

confidence: 99%

AlScN‐on‐SiC Thin Film Micromachined Resonant Transducers Operating in High‐Temperature Environment up to 600 °C

Sui

Wang

Lee

et al. 2022

Adv Funct Materials

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The experimental demonstration of aluminum scandium nitride (AlScN)‐on‐cubic silicon carbide (SiC) heterostructure thin film micromachined resonant transducers operating in a high‐temperature environment up to 600 °C is reported. Macroscopic and microscopic vibrations are investigated through a combination of ultrasensitive laser interferometry techniques and Raman spectroscopy. An average linear temperature coefficient of resonance frequency (TCf) of <1 ppm °C−1 within the temperature range from room temperature to 200 °C, and an average linear TCf of −16 ppm °C−1 between 200 and 600 °C, from the fundamental‐mode resonance of AlScN/SiC circular diaphragm resonator with a thickness of 1.9 µm and diameter of 250 µm, is obtained. Higher‐order modes exhibit much larger TCf, which make them strong candidates as high‐temperature‐tolerant temperature sensors or ultraviolet detectors. Raman spectroscopy indicates that the turning points of the peak positions of the longitudinal optical phonon modes of both 3C‐SiC and AlScN occur in almost the same temperature region where the turnover point of TCf is observed, suggesting that the microscopic vibrations in the crystal lattice and the macroscopic oscillation of the diaphragm are naturally mediated by the residual strain inside the materials at varying temperature.

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Measurement of output voltage of aluminum nitride thin film as a pressure sensor at high temperature

Cited by 14 publications

References 5 publications

Thin-film electro-acoustic sensors based on AlN and its alloys: possibilities and limitations

Thin-film electro-acoustic sensors based on AlN and its alloys: possibilities and limitations

Electro-acoustic sensors based on AlN thin film: possibilities and limitations

AlScN‐on‐SiC Thin Film Micromachined Resonant Transducers Operating in High‐Temperature Environment up to 600 °C

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