Measurement of group effective index in integrated semiconductor optical waveguides

Morasca, S.; Pozzi, Fabio; Bernardi, C. De

doi:10.1109/68.185054

Cited by 10 publications

(4 citation statements)

References 5 publications

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“…6 we show the group indices at different wavelengths for both the quasi-TE and the quasi-TM modes (crosses and diamonds, respectively) obtained from the transmission spectra. 7 We also show the simulated group index spectra for both quasi-TE and quasi-TM modes of the slot waveguide forming the ring (solid and dashed curves, respectively). The simulation is based on the full-vectorial finite-difference mode solver.…”

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confidence: 99%

Experimental demonstration of guiding and confining light in nanometer-size low-refractive-index material

et al. 2004

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We experimentally demonstrate a novel silicon waveguide structure for guiding and confining light in nanometer-wide low-refractive-index material. The optical field in the low-index material is enhanced because of the discontinuity of the electric field at high-index-contrast interfaces. We measure a 30% reduction of the effective index of light propagating in the novel structure due to the presence of the nanometer-wide low-index region, evidencing the guiding and confinement of light in the low-index material. We fabricate ring resonators based on the structure and show that the structure can be implemented in highly integrated photonics.

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confidence: 99%

Experimental demonstration of guiding and confining light in nanometer-size low-refractive-index material

et al. 2004

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“…To the best of our knowledge this is the first report on the measurement of groupindex birefringence of this magnitude, which is about 70 times as large as that of InGaAsP / InP devices measured by a similar Fabry-Pérot technique. 19 We compare the experimental values with those obtained from our simulations. The methods used are simple, require only relatively modest equipment, and can be used directly on straight waveguides, thus obviating the need for specifically designed photonic waveguide devices for group-index measurements.…”

Section: Introductionmentioning

confidence: 95%

“…The group index can be measured by varying the wavelength of the injected light and measuring the period of the transmittance. 19 Moreover, by taking the square root of the ratio of the maximum to the minimum transmittance, ␥ = ͑I max / I min ͒ 1/2 , Eq. ͑1͒ can be used to calculate the linear propagation loss:…”

Section: Theorymentioning

confidence: 99%

Group-index birefringence and loss measurements in silicon-on-insulator photonic wire waveguides

et al. 2007

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Group-index birefringence in silicon-on-insulator photonic wire waveguides is determined through a polarization beating technique and a Fabry-Pérot resonance method. A large group-index birefringence, up to 0.67, is obtained as a result of the structural asymmetry and high field confinement of our waveguides. The group index and linear propagation loss are also determined. In particular, the group index is found to be as large as 4.45 due to the significant change in the effective mode index of the waveguide as a function of the wavelength. The effects of structure size on the measured losses and group indices are analyzed. Our experimental results are in good agreement with our simulations, and the method employed is found to be effective in analyzing the linear properties of submicrometer optical waveguide structures.

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“…The refractive index and the group refractive index of guided modes in semiconductor heterostructure waveguides are key parameters that affect the design and operation of most optoelectronic devices. Several techniques have been reported for measuring these quantities [1][2][3][4][5][6][7] but most of these are limited in the spectral range over which they can be easily applied. The literature is replete with models for calculating refractive indices for guided modes in semiconductor waveguides [8][9][10][11] but when comparisons with experiment are provided, they are usually restricted to a single wavelength, or a very narrow region of the spectrum.…”

Section: Introductionmentioning

confidence: 99%

Contribution of single InGaAs quantum wells to the guided mode dispersion of InGaAs/GaAs/AlGaAs waveguides: Model and experimental results

Pacradouni

Morin

Kanskar

et al. 1996

Journal of Applied Physics

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High resolution Fabry-Perot fringe spacing measurements are used to determine the group index dispersion of TE and TM polarized modes in single quantum well InGaAs/AlGaAs/GaAs graded index separate confinement heterostructure waveguides. The TE mode data, over a ϳ175 nm range below the quantum well band gap, is compared with model calculations of guided mode dispersion using existing empirical formulas for the index dispersion of Al x Ga 1Ϫx As and GaAs, and different phenomenological expressions for the TE index dispersion of the InGaAs quantum well. A satisfactory fit is obtained when the quantum well is modeled as a two-dimensional set of equal strength oscillators with a constant density of states, plus a single 1S excitonic level.

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Measurement of group effective index in integrated semiconductor optical waveguides

Cited by 10 publications

References 5 publications

Experimental demonstration of guiding and confining light in nanometer-size low-refractive-index material

Experimental demonstration of guiding and confining light in nanometer-size low-refractive-index material

Group-index birefringence and loss measurements in silicon-on-insulator photonic wire waveguides

Contribution of single InGaAs quantum wells to the guided mode dispersion of InGaAs/GaAs/AlGaAs waveguides: Model and experimental results

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