Measurement of Electron Density of Reactive Plasma Using a Plasma Oscillation Method

Kanoh, Masaaki; Tonotani, Junichi; Aoki, Katsuaki; Yamage, Masashi

doi:10.1143/jjap.41.3963

Cited by 14 publications

(11 citation statements)

References 2 publications

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“…The use of an oscillation probes, 5,6 which can provide the local electron density information, was discovered by Shirakawa and Sugai. It directly gives the absolute electron density without complex modeling and assumptions; however, it still has problems when used to measure the processing plasma, [4][5][6][7][8][9][10] as the filament used as the electron beam source can induce metal contamination in the processing reactor, the filament can be etched by fluorocarbon gases (leading to life time problems with the filament), and the probe measurement is possible only at low pressure. Another probe method, the plasma absorption probe method, 4 is applicable to any type of processing plasma, yet this method is limited to electron densities greater than 10 10 cm À3 and to discharge pressures of less than 0.5 Torr.…”

Section: Introductionmentioning

confidence: 99%

Computational characterization of cutoff probe system for the measurement of electron density

Kim

Kwon

et al. 2012

Physics of Plasmas

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The wave cutoff probe, a precise measurement method for measuring the electron density, was recently proposed. To characterize the cutoff probe system, in this paper, the microwave simulations of a cutoff probe system were performed at various configurations of the cutoff probe system. The influence of the cutoff probe spectrum stemming from numerous parametric elements such as the probe tip length, probe tip distance, probe tip plane orientation, chamber volume/geometry, and coaxial cable length is presented and discussed. This article is expected to provide qualitative and quantitative insight into cutoff probe systems and its optimization process. V C 2012 American Institute of Physics. [http://dx.

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Section: Introductionmentioning

confidence: 99%

Computational characterization of cutoff probe system for the measurement of electron density

Kim

Kwon

et al. 2012

Physics of Plasmas

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“…The plasma density of fluorine-based gas increases with decreasing gas pressure. 10) The mean free path of ions also increases with decreasing gas pressure. The anisotropic profile of plasma etching is caused by highly directional ions that bombard the surface.…”

Section: Fabrication Of Fine Metal Gate Stacksmentioning

confidence: 99%

Etch Profile Control of W/TiN/HfSiON and W/TaSiN/HfSiON Full-Metal Gates

Ono¹,

Aoyama²,

Nara³

2009

Jpn. J. Appl. Phys.

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W/TiN/HfSiON and W/TaSiN/HfSiON, equivalent oxide thickness (EOT) 1 nm, full-metal gate stacks were etched using CF 4 and SF 6 based gas chemistries. Vertical profiles were achieved for both TiN and TaSiN metal gates with gate lengths of 20 nm by controlling gas chemistry and pressure. The etch condition was changed from the high-pressure region to the low-pressure region immediately before the appearance of the underlying TaSiN surface by monitoring the thickness of the W layer to take advantage of both high-and low-pressure plasma characteristics.

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“…9 The plasma oscillation method directly gives the absolute electron density directly without complex modeling and assumptions. However, it still has problems in measuring processing plasma: 7,8,[10][11][12][13] the filament used in the electron beam source can induce metal contamination in the processing reactor, the lifetime of the filament is short, and the probe measurement is available only at low pressure. Another probe method, the plasma absorption probe method, 7 is applicable to any type of processing plasmas, yet this method is limited to electron densities greater than 10 10 cm À3 and to discharge pressures less than 0.5 Torr.…”

Section: Introductionmentioning

confidence: 99%

Measurement of electron density with the phase-resolved cut-off probe method

Kwon

You

Kim

et al. 2011

Journal of Applied Physics

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The phase resolved cutoff probe method, a precise measurement method for the electron density, was recently proposed [J. H. Kwon et al., Appl. Phys. Lett. 96, 081502 (2010)]. This paper presents the measurements of electron density using the method under various experimental conditions (different pressures, powers, chamber volumes, and discharge sources). The result shows that the method is not only in good agreement with the previous method using wave transmittance under various experimental conditions but it is also able to find the cutoff point clearly even under difficult conditions such as high pressure ($ 1 Torr), high discharge power, and small plasma volume. The details of the experimental setup, the operating mechanism of the probe method, and the data processing procedure (algorithm) are also addressed. Furthermore, the reliability of the measurement method is investigated by using an electromagnetic field simulation with cold plasma model (CST-Drude model, Computer Simulation Technology). V

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Measurement of Electron Density of Reactive Plasma Using a Plasma Oscillation Method

Cited by 14 publications

References 2 publications

Computational characterization of cutoff probe system for the measurement of electron density

Computational characterization of cutoff probe system for the measurement of electron density

Etch Profile Control of W/TiN/HfSiON and W/TaSiN/HfSiON Full-Metal Gates

Measurement of electron density with the phase-resolved cut-off probe method

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