Measurement of effective electron mass in biaxial tensile strained silicon on insulator

Abstract

We present measurements of the effective electron mass in biaxial tensile strained silicon on insulator (SSOI) material with 1.2 GPa stress and in unstrained SOI. Hall-bar metal oxide semiconductor field effect transistors on 60 nm SSOI and SOI were fabricated and Shubnikov–de Haas oscillations in the temperature range of T=0.4–4 K for magnetic fields of B=0–10 T were measured. The effective electron mass in SSOI and SOI samples was determined as mt=(0.20±0.01)m0. This result is in excellent agreement with first-principles calculations of the effective electron mass in the presence of strain.

Electrical Characterization of TbScO3/TiN Gate Stacks of MOS Capacitors and MOSFETs on Strained and Unstrained SOI

“…In addition, energy splitting of the subbands reduces carrier scattering. A similar improvement was also observed for the transconductance of the devices as shown in figure 5 (a) which is in agreement with ref (8). The extracted R sd values are with 100 for SOI and 350 for sSOI, respectively, very low.…”

Ultrathin Ni Silicides With Low Contact Resistance on Strained and Unstrained Silicon

“…Obviously, stress in SSOI affects the electrical properties of the NiSi/SSOI interface, leading to a smaller contact resistance. For n-type SSOI and low strain states, the lifting of the band degeneracy increases the lower mass subband occupancy and decreases carrier scattering [8], which can account for lower contact resistivity. However, further investigations are needed to fully comprehend the strain effects.…”

High mobility Si-Ge channels and novel high-k materials for nanomosfets

“…Strained Si is established as the appropriate material for n-MOSFETS device performance improvement. Recently, using Shubnikov-de Haas measurements, the extracted effective electron mass in SSOI and SOI devices were demonstrated to be equal with the transverse electron mass of electrons in the Δ 2 sub-band [4]. Low biaxial tensile stress, similar to the one used in the present paper, does not warp the conduction-band constant-energy surfaces.…”