Materials with layered structures XIII: electrical and optical properties of layered chalcogenides in the system CoIn2S4–CoIn2Se4

Memo, A.; Kwarteng-Acheampong, W.; Haeuseler, H.

doi:10.1016/s0025-5408(03)00079-5

Cited by 13 publications

(7 citation statements)

References 9 publications

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“…Even so, the total magnetic orderings are still maintained in FM state, and more importantly, the band structures for CoGa 2 S 4 with one pair of Co and Ga changed for 3 × 3 × 1 or 4 × 4 × 1 supercell (Figure S14, Supporting Information) keep the half‐metallicity. In addition, experiments on CoIn 2 S 4 x Se 4(1− x ) (several possible structures and their band dispersions are shown in Figure S15 in the Supporting Information) have discovered that Fe‐T structure becomes more stable than Zn‐T structure with increasing amount of selenium . This observation is consistent with our results that energies of mixed Co occupation for CoGa 2 Se 4 and CoGa 2 Te 4 are higher than that with Co atoms only occupying octahedral sites.…”

Section: Resultssupporting

confidence: 90%

“…Many layered Fe‐T sulfides have been synthesized in experiments. While FeGa 2 S 4 and NiGa 2 S 4 are isomorphic with 1:2:4 stoichiometry, for M = V/Cr, noninteger stoichiometric V 0.97 Ga 1.93 S 4 and Cr 0.9 Ga 2 S 4 are reported in Fe‐T structure, and for M = Mn/Co, their quaternary chalcogenides, such as MnGa x Ti 2− x S 4 , CoGa x In 2− x S 4 , and CoGa 2 S x Se 4− x , all exhibit Fe‐T phase under certain x ranges. Some other layered MGa 2 X 4 may exhibit Zn‐T phase, such as ZnIn 2 S 4 and CdIn 2 S 4 .…”

Section: Resultsmentioning

confidence: 99%

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Intrinsic Half‐Metallicity in 2D Ternary Chalcogenides with High Critical Temperature and Controllable Magnetization Direction

Zhang

Duan

et al. 2019

Adv Funct Materials

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Searching for 2D ferromagnetic materials with a high critical temperature, large spin polarization, and controllable magnetization direction is a key challenge for their broad applications in spintronics. Here, through a systematic study on a series of 2D ternary chalcogenides with first-principles calculations, it is demonstrated that a family of experimentally available 2D CoGa 2 X 4 (X = S, Se, or Te) are half-metallic ferromagnets, and they exhibit high critical temperature, fully polarized spin state, and strain-dependent magnetization direction simultaneously. Following the Goodenough-Kanamori rules, the half-metallic ferromagnetism of CoGa 2 X 4 family is caused by superexchange interaction mediated by CoXCo bonds. The half-metal gaps are large enough (>0.5 eV) to ensure that the half-metallicity is stable against the spin flipping at room temperature. Magnetocrystalline anisotropy energy calculations indicate that CoGa 2 X 4 favor easy plane magnetization. Under achievable biaxial tensile strain (2-6%), the magnetization directions of CoGa 2 X 4 can change from in-plane to out-of-plane, providing a route to control the efficiency of spin injection/detection. Further, the critical temperatures T c of ferromagnetic phase transition for CoGa 2 X 4 are close to room temperature. Belonging to the big family of layered AB 2 X 4 compounds, the proposed CoGa 2 X 4 systems will enrich the available 2D candidates and their heterojunctions for various applications.

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Section: Resultssupporting

confidence: 90%

Section: Resultsmentioning

confidence: 99%

Intrinsic Half‐Metallicity in 2D Ternary Chalcogenides with High Critical Temperature and Controllable Magnetization Direction

Zhang

Duan

et al. 2019

Adv Funct Materials

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“…A few studies of CoIn 2 S 4 have been made on the structural and magnetic properties of this material [8,9]. Also, a few information of CoIn 2 S 4 has been appeared in the systems of Co 𝑥 Cd 1−𝑥 In 2 S 4 [10], Co 𝑥 Zn 1−𝑥 In 2 S 4 [11][12][13][14] CoGaInS 4 [15,16], CoIn 2 S 4 -CoIn 2 Se 4 [17], and CoIn 2−2𝑥 Cr 2𝑥 S 4 [18]. However, there has been no information on band gap and optical properties of CoIn 2 S 4 .…”

Section: Introductionmentioning

confidence: 99%

Growth and Optical Absorption of CoIn₂S₄ Thin Films by Spray Pyrolysis Method

Kim

2021

Appl. Sci. Converg. Technol.

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CoIn 2 S 4 thin films were grown onto glass substrates by a spray pyrolysis method. For the growth, the substrate temperature was varied between 250 and 320 ∘ C, and the spray rate was fixed at 6 ml/min. The grown thin films were characterized X-ray diffraction (XRD), field-emission scanning electron microscope (FE-SEM), and optical spectroscopy. The XRD analysis showed that the thin films grown at 320 ∘ C were well crystallized in cubic spinel structure. The FE-SEM results demonstrated that the thin films have a uniform and homogeneous surface. The direct band gap energy was first obtained from the measurement of optical absorption spectra near the fundamental absorption edge at 292 K, and was founded to be 1.59 eV. We also observed two group absorption bands in the near-infrared region, which originate in cobalt ions of the constituent elements of CoIn 2 S 4 . The absorption bands were well assigned as due to the crystal-field transitions of Co 2+ ions occupying tetrahedral sites of the cubic spinel CoIn 2 S 4 host lattice.

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“…[8][9][10][11] Among the chalcogenide materials, magnetic semiconductors of the type MB 2 X 4 (where M -Mn, Fe, Co, Ni; B -Ga, In; X -S, Se, Te) and phases on their basis are very promising for use in the manufacture of lasers, light modulators, photodetectors and other electronic devices controlled by a magnetic field. [12][13][14][15][16][17] Search and development of methods for the directed synthesis of new multicomponent phases and materials requires the study of phase equilibria in the relevant systems. 18,19 For this case, the systems including compounds which are structural or formula analogs are the greatest interest since the formation of broad areas of substitutional solid solutions can be expected in them.…”

Section: Introductionmentioning

confidence: 99%

Phase Equilibria in the MnGa2Tе4-MnIn2Tе4 System, Crystal Structure and Physical Properties of MnGaInTе4

Mammadov

Amiraslanov

Aliyeva

et al. 2019

ACSi

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The phase equilibria in the MnGa 2 Tе 4 -MnIn 2 Tе 4 system were experimentally investigated by means of differential thermal analysis and powder X-ray diffraction technique. It was found that this system is quasi-binary and characterized by dystectic and eutectic equilibria and the formation of a wide area of solid solutions based on the starting compounds. The crystal structures of the MnGaInTe 4 and MnIn 2 Tе 4 were refined by the Rietveld method using powder X-ray diffraction data. It was established, that both phases crystallize in the tetragonal system (Space group I-42m). Electron paramagnetic resonance and Raman spectra, as well as the temperature dependences of the electrical conductivity and the Hall effect for the MnGaInTe 4 crystal, were studied.

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Materials with layered structures XIII: electrical and optical properties of layered chalcogenides in the system CoIn2S4–CoIn2Se4

Cited by 13 publications

References 9 publications

Intrinsic Half‐Metallicity in 2D Ternary Chalcogenides with High Critical Temperature and Controllable Magnetization Direction

Intrinsic Half‐Metallicity in 2D Ternary Chalcogenides with High Critical Temperature and Controllable Magnetization Direction

Growth and Optical Absorption of CoIn₂S₄ Thin Films by Spray Pyrolysis Method

Phase Equilibria in the MnGa2Tе4-MnIn2Tе4 System, Crystal Structure and Physical Properties of MnGaInTе4

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Materials with layered structures XIII: electrical and optical properties of layered chalcogenides in the system CoIn2S4–CoIn2Se4

Cited by 13 publications

References 9 publications

Intrinsic Half‐Metallicity in 2D Ternary Chalcogenides with High Critical Temperature and Controllable Magnetization Direction

Intrinsic Half‐Metallicity in 2D Ternary Chalcogenides with High Critical Temperature and Controllable Magnetization Direction

Growth and Optical Absorption of CoIn2S4 Thin Films by Spray Pyrolysis Method

Phase Equilibria in the MnGa2Tе4-MnIn2Tе4 System, Crystal Structure and Physical Properties of MnGaInTе4

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Growth and Optical Absorption of CoIn₂S₄ Thin Films by Spray Pyrolysis Method