D. Rogers, F.H. Teherani, P. Kung, K. Minder, M. Razeghi
n-ZnO/p-GaN:Mg hybrid heterojunctions grown on c-Al 2 O 3 substrates showed 375 nm room temperature electroluminescence. It was suggested that the high materials and interface quality obtained using pulsed laser deposition for the n-ZnO growth and metal-organic chemical vapor deposition for the p-GaN:Mg were key factors enabling the injection of holes and the radiative near band edge recombination in the ZnO. In this paper we present the materials characterization of this structure using x-ray diffraction, sc…
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