Material and optical properties of low-temperature NH3-free PECVD SiNxlayers for photonic applications

Bucio, Thalía Domínguez; Khokhar, Ali Z.; Lacava, Cosimo; Stanković, S.; Mashanovich, Goran Z.; Petropoulos, P.; Gardes, Frederic Y.

doi:10.1088/1361-6463/50/2/025106

Cited by 77 publications

(39 citation statements)

References 31 publications

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“…Thus, the initial design consists in a spiral constituted of two different widths: a narrow-enough section to be single-mode in the bending regions to prevent important bending loss; and a larger multimode section to reduce the overlap between the fundamental mode and the sidewalls in order to diminish the linear propagation loss in the straight regions. We performed numerical simulations using a mode solver to find suitable waveguide widths for the single-mode and multimode regions for wavelengths lower than 1300 nm, since at higher wavelengths, the linear losses of N-rich SiN x increase [36]. For a 700 nm width, the waveguide is single-mode in the near-infrared wavelength range (1000-1300 nm) while confining the light well.…”

Section: Sample Fabricationmentioning

confidence: 99%

“…In this case, it is necessary to reduce the effective index of the SiN x waveguide for optimal fiber-to-chip coupling. The use of a nitrogen-rich (N-rich) SiN x is favorable in this case since the refractive index of SiN x decreases when increasing the amount of nitrogen [36], and it can be deposited with a lowtemperature PECVD technique. Moreover, the N-H bonds do not affect the propagation loss in the O band, and it even has been reported that linear losses at 1.31 μm are lower for N-rich SiN x (<1 dB∕cm) than for stoichiometric SiN x [36].…”

Section: Introductionmentioning

confidence: 99%

“…The use of a nitrogen-rich (N-rich) SiN x is favorable in this case since the refractive index of SiN x decreases when increasing the amount of nitrogen [36], and it can be deposited with a lowtemperature PECVD technique. Moreover, the N-H bonds do not affect the propagation loss in the O band, and it even has been reported that linear losses at 1.31 μm are lower for N-rich SiN x (<1 dB∕cm) than for stoichiometric SiN x [36]. This is the approach we chose in this study, as it permits us to obtain low linear-loss films through a simple back end of line-compatible process appropriate for the STMicroelectronics platform.…”

Section: Introductionmentioning

confidence: 99%

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Broadband supercontinuum generation in nitrogen-rich silicon nitride waveguides using a 300 mm industrial platform

Lafforgue¹,

Guerber²,

Ramírez³

et al. 2020

Photon. Res.

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We report supercontinuum generation in nitrogen-rich (N-rich) silicon nitride waveguides fabricated through back-end complementary-metal-oxide-semiconductor (CMOS)-compatible processes on a 300 mm platform. By pumping in the anomalous dispersion regime at a wavelength of 1200 nm, two-octave spanning spectra covering the visible and near-infrared ranges, including the O band, were obtained. Numerical calculations showed that the nonlinear index of N-rich silicon nitride is within the same order of magnitude as that of stoichiometric silicon nitride, despite the lower silicon content. N-rich silicon nitride then appears to be a promising candidate for nonlinear devices compatible with back-end CMOS processes.

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Section: Sample Fabricationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Broadband supercontinuum generation in nitrogen-rich silicon nitride waveguides using a 300 mm industrial platform

Lafforgue¹,

Guerber²,

Ramírez³

et al. 2020

Photon. Res.

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“…This 300 nm thick stoichiometric silicon nitride will become the standard CORNERSTONE thickness for MPW calls, with a 3 µm thick silicon dioxide under-cladding. Using 300 nm thick PECVD silicon nitride layers, we realized single-mode waveguides fabricated by e-beam lithography with propagation losses below 1 dB/cm in the O-band and close to 1.5 dB/cm in the C-band, as in Table 4 [116]. A detailed comparison of silicon nitride technologies available at foundries and research groups around the world can be found in a publication by Muñoz et al [90].…”

Section: Silicon Nitridementioning

confidence: 99%

CORNERSTONE’s Silicon Photonics Rapid Prototyping Platforms: Current Status and Future Outlook

Littlejohns

Rowe

et al. 2020

Applied Sciences

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The field of silicon photonics has experienced widespread adoption in the datacoms industry over the past decade, with a plethora of other applications emerging more recently such as light detection and ranging (LIDAR), sensing, quantum photonics, programmable photonics and artificial intelligence. As a result of this, many commercial complementary metal oxide semiconductor (CMOS) foundries have developed open access silicon photonics process lines, enabling the mass production of silicon photonics systems. On the other side of the spectrum, several research labs, typically within universities, have opened up their facilities for small scale prototyping, commonly exploiting e-beam lithography for wafer patterning. Within this ecosystem, there remains a challenge for early stage researchers to progress their novel and innovate designs from the research lab to the commercial foundries because of the lack of compatibility of the processing technologies (e-beam lithography is not an industry tool). The CORNERSTONE rapid-prototyping capability bridges this gap between research and industry by providing a rapid prototyping fabrication line based on deep-UV lithography to enable seamless scaling up of production volumes, whilst also retaining the ability for device level innovation, crucial for researchers, by offering flexibility in its process flows. This review article presents a summary of the current CORNERSTONE capabilities and an outlook for the future.

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“…Compatible materials for this technology are based on group IV compounds, which exploit the CMOS knowhow and do not require the conversion of exiting fabrication facilities, making Silicon Photonics very attractive to the industry. So far, integrated silicon and multilayer based systems [6]- [8] including high speed photodetectors [9], [10] , wavelength division multiplexing (WDM) filters [11] and in particular optical modulators [12]- [13] have been successfully demonstrated.…”

Section: Figure 2 Ethernetmentioning

confidence: 99%

56 Gbps Si/GeSi integrated EAM

Mastronardi

Banakar

Khokhar

et al. 2018

Nanophotonics and Micro/Nano Optics IV

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The growing demand for fast, reliable and low power interconnect systems requires the development of efficient and scalable CMOS compatible photonic devices, in particular optical modulators. In this paper, we demonstrate an innovative electro absorption modulator (EAM) developed on an 800 nm SOI platform; the device is integrated in a rib waveguide with dimensions of a 1.5 µm x 40 µm, etched on a selectively grown GeSi cavity. High speed measurements at 1566 nm show an eye diagram with dynamic ER of 5.2 dB at 56 Gbps with a power consumption of 44 fJ/bit. Please verify that (1) all pages are present, (2) all figures are correct, (3) all fonts and special characters are correct, and (4) all text and figures fit within the red margin lines shown on this review document.

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Material and optical properties of low-temperature NH₃-free PECVD SiN_xlayers for photonic applications

Cited by 77 publications

References 31 publications

Broadband supercontinuum generation in nitrogen-rich silicon nitride waveguides using a 300 mm industrial platform

Broadband supercontinuum generation in nitrogen-rich silicon nitride waveguides using a 300 mm industrial platform

CORNERSTONE’s Silicon Photonics Rapid Prototyping Platforms: Current Status and Future Outlook

56 Gbps Si/GeSi integrated EAM

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