“…Therefore, the drain current of the chitosan-Ta 2 O 5 hybrid EDLT returns to the initial off state. These initialisation properties and linear relationships of the maximum V G vs hysteresis window indicate that the proposed device can mimic the biological synapse 33 – 35 . Figure 6 ( a ) Transfer characteristic curves of the chitosan electrolyte-Ta 2 O 5 hybrid EDLT according to the V G sweep range.…”
Section: Resultsmentioning
confidence: 71%
“…Therefore, the drain current of the chitosan- Ta 2 O 5 hybrid EDLT returns to the initial off state. These initialisation properties and linear relationships of the maximum V G vs hysteresis window indicate that the proposed device can mimic the biological synapse [33][34][35] . In the biological neural systems, synaptic plasticity is considered as the function for the mimicking synaptic operations of the EDLTs.…”
Section: Synaptic Operations Of the Chitosan Electrolyte-ta 2 O 5 Hybmentioning
This study proposes a hybrid electric double layer (EDL) with complementary metal-oxide semiconductor (CMOS) process compatibility by stacking a chitosan electrolyte and a Ta2O5 high-k dielectric thin film. Bio-inspired synaptic transistors with excellent electrical stability were fabricated using the proposed hybrid EDL for the gate dielectric layer. The Ta2O5 high-k dielectric layer with high chemical resistance, thermal stability, and mechanical strength enables CMOS-compatible patterning processes on biocompatible organic polymer chitosan electrolytes. This technique achieved ion-conduction from the chitosan electrolyte to the In-Ga-Zn oxide (IGZO) channel layer. The on/off current ratio, subthreshold voltage swing, and the field-effect mobility of the fabricated IGZO EDL transistors (EDLTs) exhibited excellent electrical properties of 1.80 × 107, 96 mV/dec, and 3.73 cm2/V·s, respectively. A resistor-loaded inverter was constructed by connecting an IGZO EDLT with a load resistor (400 MΩ) in series. This demonstrated good inverter action and responded to the square-wave input signals. Synaptic behaviours such as the hysteresis window and excitatory post-synaptic current (EPSC) variations were evaluated for different DC gate voltage sweep ranges and different AC gate spike stimuli, respectively. Therefore, the proposed organic–inorganic hybrid EDL is expected to be useful for implementing an extremely compact neural architecture system.
“…Therefore, the drain current of the chitosan-Ta 2 O 5 hybrid EDLT returns to the initial off state. These initialisation properties and linear relationships of the maximum V G vs hysteresis window indicate that the proposed device can mimic the biological synapse 33 – 35 . Figure 6 ( a ) Transfer characteristic curves of the chitosan electrolyte-Ta 2 O 5 hybrid EDLT according to the V G sweep range.…”
Section: Resultsmentioning
confidence: 71%
“…Therefore, the drain current of the chitosan- Ta 2 O 5 hybrid EDLT returns to the initial off state. These initialisation properties and linear relationships of the maximum V G vs hysteresis window indicate that the proposed device can mimic the biological synapse [33][34][35] . In the biological neural systems, synaptic plasticity is considered as the function for the mimicking synaptic operations of the EDLTs.…”
Section: Synaptic Operations Of the Chitosan Electrolyte-ta 2 O 5 Hybmentioning
This study proposes a hybrid electric double layer (EDL) with complementary metal-oxide semiconductor (CMOS) process compatibility by stacking a chitosan electrolyte and a Ta2O5 high-k dielectric thin film. Bio-inspired synaptic transistors with excellent electrical stability were fabricated using the proposed hybrid EDL for the gate dielectric layer. The Ta2O5 high-k dielectric layer with high chemical resistance, thermal stability, and mechanical strength enables CMOS-compatible patterning processes on biocompatible organic polymer chitosan electrolytes. This technique achieved ion-conduction from the chitosan electrolyte to the In-Ga-Zn oxide (IGZO) channel layer. The on/off current ratio, subthreshold voltage swing, and the field-effect mobility of the fabricated IGZO EDL transistors (EDLTs) exhibited excellent electrical properties of 1.80 × 107, 96 mV/dec, and 3.73 cm2/V·s, respectively. A resistor-loaded inverter was constructed by connecting an IGZO EDLT with a load resistor (400 MΩ) in series. This demonstrated good inverter action and responded to the square-wave input signals. Synaptic behaviours such as the hysteresis window and excitatory post-synaptic current (EPSC) variations were evaluated for different DC gate voltage sweep ranges and different AC gate spike stimuli, respectively. Therefore, the proposed organic–inorganic hybrid EDL is expected to be useful for implementing an extremely compact neural architecture system.
“…However, the organic semiconductors in OTFTs are vulnerable to charge traps [16][17][18] and leakage current, which frequently occur in oxide dielectrics (i.e., silicon dioxide (SiO 2 ) [19][20][21], aluminum oxide (Al 2 O 3 ) [22,23], and hafnium oxide (HfO 2 ) [24]). Owing to the strong susceptibility of Micromachines 2021, 12, 565 2 of 17 organic semiconductors to charge traps, OTFTs suffer from instability, which causes currentvoltage sweep hysteresis [25][26][27], shifts in the threshold voltage (V TH ) [28,29], and bias stress effects [30][31][32][33]. To address these issues, the treatment of the hydroxylated surfaces of dielectrics is crucial.…”
Section: Sams As Basic Elements Of the Devicementioning
Self-assembled monolayers (SAMs), molecular structures consisting of assemblies formed in an ordered monolayer domain, are revisited to introduce their various functions in electronic devices. SAMs have been used as ultrathin gate dielectric layers in low-voltage transistors owing to their molecularly thin nature. In addition to the contribution of SAMs as gate dielectric layers, SAMs contribute to the transistor as a semiconducting active layer. Beyond the transistor components, SAMs have recently been applied in other electronic applications, including as remote doping materials and molecular linkers to anchor target biomarkers. This review comprehensively covers SAM-based electronic devices, focusing on the various applications that utilize the physical and chemical properties of SAMs.
“…Bionic visual perception systems by photosensitive device which emulate the visualreceptive functions and visual recognition in brain have drawn a lot of attention due to their unique characteristics including broad bandwidth, ultrafast signal transmission, and strong interference immunity. [1][2][3][4][5][6][7] To simulate high-performance photonic synaptic devices, memristor, [8] phase-change memory, [9] organic fieldeffect transistor, [10] and floating-gate photomemory [4,11] have been extensively studied. However, the nonlinear writing in memristors and the high programming energy consumption in phase change memory limit the construction of neuromorphic network.…”
Emulation of photonic synapses through photo-recordable devices has aroused tremendous discussion owing to the low energy consumption, high parallel, and fault-tolerance in artificial neuromorphic networks. Nonvolatile flash-type photomemory with short photo-programming time, long-term storage, and linear plasticity becomes the most promising candidate. Nevertheless, the systematic studies of mechanism behind the charge transfer process in photomemory are limited. Herein, the physical properties of APbBr 3 perovskite quantum dots (PQDs) on the photoresponsive characteristics of derived poly(3-hexylthiophene-2,5-diyl) (P3HT)/PQDs-based photomemory through facile A-site substitution approach are explored. Benefitting from the lowest valance band maximum and longest exciton lifetime of FAPbBr 3 quantum dot (FA-QDs), P3HT/FA-QDs-derived photomemory not only exhibits shortest photoresponsive characteristic time compared to FA 0.5 Cs 0.5 PbBr 3 quantum dots (Mix-QDs) and CsPbBr 3 quantum dots (Cs-QDs) but also displays excellent ON/OFF current ratio of 2.2 upon an extremely short illumination duration of 1 ms. Moreover, the device not only achieves linear plasticity of synapses by optical potentiation and electric depression, but also successfully emulates the features of photon synaptic such as pair-pulse facilitation, long-term plasticity, and multiple spikedependent plasticity and exhibits extremely low energy consumption of 3 × 10 −17 J per synaptic event.
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