Making the Dzyaloshinskii-Moriya interaction visible

Hrabec, Aleš; Belmeguenai, M.; Stashkevich, A. A.; Chérif, S. M.; Rohart, Stanislas; Roussigné, Y.; Thiaville, A.

doi:10.1063/1.4985649

Cited by 20 publications

(15 citation statements)

References 48 publications

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“…A series of X(5)/Co 20 Fe 60 B 20 (1)/MgO(2)/Ta(2) and X(5)/ Co(1)/MgO(2)/Ta(2) (X = Ta, W, Ir, Pt) thin films were deposited by magnetron sputtering at room temperature on silicon substrates, where the numbers in parentheses denote the nominal layer thicknesses in nanometers. We used thermally oxidized Si substrates with around 100 nm SiO2 on surface, because the light signal is optimized for all incident angle used in BLS [39]. Co 20 Fe 60 B 20 (1)/MgO(2)/ Ta(2) and Co(1)/MgO(2)/Ta(2) multilayers were also sputtered onto Au(5) underlayer prepared with e-beam evaporation.…”

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confidence: 99%

Interfacial Dzyaloshinskii-Moriya Interaction: Effect of 5d Band Filling and Correlation with Spin Mixing Conductance

Tang

et al. 2018

Phys. Rev. Lett.

126

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The Dzyaloshinskii-Moriya interaction (DMI) at the heavy metal (HM) and ferromagnetic metal (FM) interface has been recognized as a key ingredient in spintronic applications. Here we investigate the chemical trend of DMI on the 5d band filling (5d^{3}-5d^{10}) of the HM element in HM/FM (FM=CoFeB,Co)/MgO multilayer thin films. DMI is quantitatively evaluated by measuring asymmetric spin wave dispersion using Brillouin light scattering. Sign reversal and 20 times modification of the DMI coefficient D have been measured as the 5d HM element is varied. The chemical trend can be qualitatively understood by considering the 5d and 3d bands alignment at the HM/FM interface and the subsequent orbital hybridization around the Fermi level. Furthermore, a correlation is observed between DMI and effective spin mixing conductance at the HM/FM interfaces. Our results provide new insights into the interfacial DMI for designing future spintronic devices.

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confidence: 99%

Interfacial Dzyaloshinskii-Moriya Interaction: Effect of 5d Band Filling and Correlation with Spin Mixing Conductance

Tang

et al. 2018

Phys. Rev. Lett.

126

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“…The Ir22Mn78(t)/Co20Fe60B20(2)/MgO(2)/Ta(2) multilayer thin films were deposited by magnetron sputtering at room temperature on thermally oxidized silicon substrates, where the subscript represents the percentage of each element in the alloyed layer and the numbers in parentheses denote the nominal layer thicknesses in nanometers. We used thermally oxidized Si substrates with around 100 nm SiO2 on surface, because the light signal is optimized for all incident angle used in BLS [36]. Different from Ref.…”

mentioning

confidence: 99%

Correlation between the Dzyaloshinskii-Moriya interaction and spin-mixing conductance at an antiferromagnet/ferromagnet interface

Wang

et al. 2018

Phys. Rev. B

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The rich interaction phenomena at antiferromagnet (AFM)/ ferromagnet (FM) interfaces are key ingredients in AFM spintronics, where many underlying mechanisms remain unclear. Here we report a correlation observed between interfacial Dzyaloshinskii-Moriya interaction (DMI) S and effective spin mixing conductance ↑↓ at IrMn/CoFeB interface. Both S and ↑↓ are quantitatively determined with Brillouin light scattering measurements, and increase with IrMn thickness in the range of 2.5~7.5 nm. Such correlation likely originates from the AFM-states-mediated spin-flip transitions in FM, which promote both interfacial DMI and spin pumping effect. Our findings provide deeper insight into the AFM-FM interfacial coupling for future spintronic design.The antiferromagnet (AFM)/ ferromagnet (FM) interfaces are of central importance in the recent development of AFM spintronics [1][2][3][4][5]. Through the interfacial coupling, the unique electric, magnetic and transport properties of the AFM can be bridged to control the FM layer. For instance, the adjacent AFM layer improves the hardness of FM via exchange bias (EB) [6][7][8] or enhances the spin current transport away from FM [9][10][11][12][13]. Taking advantage of the faster dynamics in AFM, one can speed up the optical control of FM by selectively perturbing the spin arrangement of the neighboring AFM layer [5]. An intense and transient torque is subsequently generated onto the FM across the AFM/FM interface [5]. More recently, new strategies utilizing multiple interfacial interactions in synergy lead to promising technology breakthroughs. Examples include the pure electric switching of FM magnetization [1][2][3][4] and the establishment of magnetic skyrmions in AFM/FM systems [14]. Especially, the electric current induced magnetization switching is driven by the spin-orbit torque (SOT) generated in the AFM or at the AFM/FM interface [1, 2,[15][16][17], which also utilizes EB instead of the external magnetic field to break the switching symmetry [1][2][3][4]. In addition, magnetic skyrmion phase has been stabilized at room temperature in AFM/FM systems [14], resulting from the interplay with Dzyaloshinskii-Moriya interaction (DMI), interfacial magnetic anisotropy and EB. The directional motion of such Né el-type magnetic skyrmions can also be efficiently manipulated with the SOT in AFM/FM systems [14].Among the rich interactions at AFM/FM interface, the recently observed interfacial DMI remains most puzzling. While such DMI at AFM/FM interface also promotes noncollinear spin alignments, it exhibits important difference from that in heavy metal (HM)/FM bilayers investigated extensively in recent years [18][19][20][21][22]. Notably, the DMI at IrMn/CoFeB

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“…The mechanism of DMI measurement using BLS setup is depicted in Figure . Hrabec et al carried out some measurements on samples with different SiO 2 substrate thickness, which can be conducive to choosing appropriate substrate to enhance the BLS signal. With the propagation of spin wave, all‐electrical methods are also a possible way to measure DMI .…”

Section: Modulation Of Hm/fm Interface For Strong Dmimentioning

confidence: 99%

Modulation of Heavy Metal/Ferromagnetic Metal Interface for High‐Performance Spintronic Devices

Peng

Zhu

Zhou

et al. 2019

Adv Elect Materials

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Spintronic devices such as magnetic tunnel junctions and skyrmions have attracted considerable attention due to features such as nonvolatility, high scalability, low power, and high speed. Over the past few years, innovative materials and new structures in this field have resulted in the emergence of new phenomena and exciting device performance. It has been found that the heavy metal (HM)/ferromagnetic metal (FM) interface plays an essential role in spintronic devices. Spintronic device performance can be significantly enhanced through proper modulation of this interface. Recent progress in this blooming field is reviewed with specific emphasis on the HM/FM interface. Investigations into HM/FM-interface-related phenomena, including perpendicular magnetic anisotropy, tunnel magnetoresistance, magnetic damping, spin-orbit torque, and Dzyaloshinskii-Moriya interaction, are put into context. Guidelines for realizing high-performance spintronic devices are provided, and an outlook on their future research direction and potential applications is given.

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Making the Dzyaloshinskii-Moriya interaction visible

Cited by 20 publications

References 48 publications

Interfacial Dzyaloshinskii-Moriya Interaction: Effect of 5d Band Filling and Correlation with Spin Mixing Conductance

Interfacial Dzyaloshinskii-Moriya Interaction: Effect of 5d Band Filling and Correlation with Spin Mixing Conductance

Correlation between the Dzyaloshinskii-Moriya interaction and spin-mixing conductance at an antiferromagnet/ferromagnet interface

Modulation of Heavy Metal/Ferromagnetic Metal Interface for High‐Performance Spintronic Devices

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