In the nonstoichiometric low-temperature phase of silver selenide a very small silver excess within the semiconducting silver selenide matrix in the order of 0.01% is sufficient to generate a linear magnetoresistance ͑LMR͒ of more than 300% at 5 T, which does not saturate at fields up to 60 T. Different theoretical models have been proposed to explain this unusual magnetoresistance ͑MR͒ behavior, among them a random resistor network consisting of four-terminal resistor units. According to this model the LMR and the crossover field from linear to quadratic behavior are primarily controlled by both the spatial distribution of the charge-carrier mobility and its average value, being essentially functions of the local and average compositions. Here we report measurements on silver-rich thin Ag x Se films with a thickness between 20 nm and 2 m, which show an increasing average mobility in conjunction with an enhanced MR for increasing film thickness. We found a linear scaling between the size of the transverse LMR and the crossover field, as predicted by the theory. For films thinner than about 100 nm the MR with field directed in the sample plane shows a breakdown of the LMR, revealing the physical length scale of the inhomegeneities in thin Ag x Se devices.In any class of conducting material the relative change in resistance ⌬ / in a magnetic field usually is far from linear and saturates at high fields. As exceptions some polycrystalline metals such as potassium or indium show a nonsaturating linear magnetoresistance ͑MR͒ ͑LMR͒, caused by macroscopic voids or inhomogeneities. This effect is rather small and the linear behavior is only found at large fields of about 1 T, 1,2 so these materials did not stimulate any thoughts of magnetic sensor applications. This changed when a large and nonsaturating LMR was found in Ag x Se and Ag x Te with linear characteristics down to 10 −4 T, leading to intense research activities. [3][4][5][6][7][8] The first approach for the explanation of this unusual behavior can be found already several years ago in the theory of Stroud, 9 who calculated the resistance of a two-phase mixture by the resistance of its single components. At certain volume fractions of the components the increase in resistance does not saturate with increasing magnetic field but is linear. [10][11][12] Other calculations show that the MR also depends strongly on the shape of the conducting inclusions and therewith on the microstructure of the compound. 13-15 Above the percolation threshold, when conducting inclusions in an insulating matrix form a continuous network, the magnetoresistance is asymptotically proportional to the magnetic field. 16 Another theoretical explanation was proposed by Abrikosov 17 as a quantum magnetoresistance for a twocomponent system with a zero band gap of the semiconducting matrix.An alternative classical approach reduced on the spatial distribution of the charge-carrier mobility and its average value was presented by Parish and Littlewood ͑PL͒. 18,19 They found that in a two-dimens...