Magnetoresistance-enhanced electro-thermal conversion performance

In Situ Atomistic Insight into Magnetic Metal Diffusion across Bi0.5Sb1.5Te3 Quintuple Layers

“…The coincidence across the BST-NiM interface occurs approximately once every 10 rows of BST and 11 rows of NiM (indicated by the white parallelogram in Figure 2j). The lattice constant a of BST is 4.29 Å, [50] versus 4.08 Å, [51] 3.93 Å, [52] and 3.90 Å [53] for NiBi, NiSb, and NiTe, respectively. The mismatch ranges from 4.89% (NiBi) to 9.09% (NiTe), but depending on the local M concentration, the lattice constant will also vary.…”

Maximizing phonon scattering efficiency by Cu2Se alloying in AgCuTe thermoelectric materials

“…Obviously, the decrease of k L is related to the nanostructure. In the present work, the Callaway model is adopted to elucidate the k L from a specic wavelength range, as given in following expression: 62,63…”

Realizing High‐Performance BiSbTe Magnetic Flexible Films via Acceleration Movement and Hopping Migration of Carriers

“…Such abnormal phenomenon probably originates from the increase in the scattering factors due to the hopping migration of carriers induced by the atomic‐scale electric fields as well as the magnetic scattering from ferromagnetic Ni‐NPs, which counteract the negative effect caused by the increase in the n . [ 22 ] With the above‐mentioned σ and α values, the α 2 σ could be calculated and shown in Figure 7d. It can be seen that the α 2 σ firstly increases and then decreases when the x is more than 0.1% in the whole temperature range as compared to that of Ni00.…”

“…[ 13 ] Unfortunately, such a strategy shows little effect on the conventional TE semiconductors. [ 14,15 ] Recently, it was reported that the magnetism incorporated into various bulk TE materials can significantly enhance the electrical and thermal transport properties due to the induced thermo‐electro‐magnetic coupling effects such as electron repository effect, [ 16 ] carrier multiple scattering effect, [ 17 ] superparamagnetism‐enhanced Seebeck effect, [ 18–20 ] magneto‐trapped carrier effect, [ 21 ] magnetoresistance‐enhanced TE effect, [ 22 ] magnetic‐field‐enhanced TE effect, [ 12,13 ] and (para)magnon‐drag Seebeck effect. [ 23 ] These coupling effects induced by magnetic nanoparticles provide unconventional pathways to simultaneously regulate electrical and thermal transport properties on the same scale for all TE materials regardless of the crystal structure.…”

“…Thermoelectric (TE) films are key materials in developing emergent applications such as wearable TE power generation, biaxial thermal management, and full solid-state refrigeration. To maximize the electro-thermal conversion and reachability, the TE films should simultaneously possess excellent TE performance magneto-trapped carrier effect, [21] magnetoresistance-enhanced TE effect, [22] magnetic-field-enhanced TE effect, [12,13] and (para) magnon-drag Seebeck effect. [23] These coupling effects induced by magnetic nanoparticles provide unconventional pathways to simultaneously regulate electrical and thermal transport properties on the same scale for all TE materials regardless of the crystal structure.…”