Magnetoelectric Effect in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Cr</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>Single Crystal as Studied by Diel

Lal, H. B.; Srivastava, Rajani; Srivastava, Krishna

doi:10.1103/physrev.154.505

Cited by 22 publications

(7 citation statements)

References 15 publications

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“…By using from slope and slice of it, ϕ B and ε Cr2O3 were calculated 0.86 eV and 4.6, respectively. However, the dielectric constant value of 4.6 is twice as small as other report [5,6]. This result assumed that the other conduction mechanism is also existed in this sample.…”

Section: IIIcontrasting

confidence: 39%

Electric and Magneto-Electric Properties of Cr2O3 Thin Films

Ichikawa

Yokota

Gomi

2014

e-J. Surf. Sci. Nanotechnol.

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C-axis epitaxial Cr2O3 thin films were prepared on Pt by radio-frequency (RF) magnetron sputtering method with an in-situ reflection high energy electron diffraction (RHEED) system. Leakage current of Cr2O3 which is deposited at 480• C is the lowest and the value shows 10 −6 -10 −7 A/cm 2 order and magnetic hysteresis was observed. This magnetization is induced at Cr2O3/Pt interface and this could be due to compressive stress from Pt substrate, and magnetoelectric (ME) effect could be modulated by interaction between interface and Cr2O3.

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Section: IIIcontrasting

confidence: 39%

Electric and Magneto-Electric Properties of Cr2O3 Thin Films

Ichikawa

Yokota

Gomi

2014

e-J. Surf. Sci. Nanotechnol.

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“…A multiferroic material can exhibit an electric polarization under a magnetic field or a magnetization under an electric field, a novel material property which is now called the magnetoelectric (ME) effect. Some single-phase materials exhibit this ME effect but the ME coupling is very weak [1][2][3]. The strong ME effect was recently observed [4,5] in artificially fabricated multiferroic composites where the two different-phase materials, i.e.…”

Section: Introductionmentioning

confidence: 82%

Effects of geometric size and mechanical boundary conditions on magnetoelectric coupling in multiferroic composites

Pan

R²

2009

J. Phys. D: Appl. Phys.

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A three-dimensional finite element method program is developed to investigate the magnetoelectric (ME) coupling in multiferroic composites. For a bilayer plate, we show that: (1) the electric potential in the piezoelectric layer induced by the magnetic potential is not uniform but exhibits concentration near the edge/corner of the plate; (2) the mechanically clamped boundary condition can enhance the ME effect by a factor of 10 as compared with the traction-free case; (3) the ME effect in a composite plate is always stronger than that in the corresponding composite beam; (4) a large aspect ratio of the plate corresponds to an increased ME effect; (5) the in-plane longitudinal ME effect is larger than the out-of-plane one.

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“…20 (Fig. 16,[21][22][23] As of now, there is no experimental evidence showing the direct coupling between magnetic and dielectric properties of Lu 3 Fe 5 O 12 . The Lu in the dodecahedral site does not possess magnetic moment due to the absence of unpaired electrons as Lu has 4f 14 configuration.…”

Section: Introductionmentioning

confidence: 99%

Observation of direct magneto-dielectric behaviour in Lu₃Fe₅O_12−δ above room-temperature

Manimuthu

Vidya

Fjellvåg

et al. 2015

Phys. Chem. Chem. Phys.

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The coupling of dielectric and magnetic order is highly nontrivial and seldom observed in rare-earth iron garnets. Careful investigations on polycrystalline Lu3Fe5O12-δ, prepared by the solid state route, establish a direct correlation between the magnetic and dielectric order parameters. A dielectric anomaly at the magnetic ordering temperature supports this correlation. The dielectric permittivity at various magnetic fields is measured using an indigenously developed connector setup. Lu3Fe5O12-δ exhibits a magneto-dielectric coupling of ∼6% at room temperature, which is significant in the case of a single-phase magneto-dielectric material at low fields. Rietveld refinement of the X-ray diffraction pattern, bond valence sum method, Mössbauer spectroscopy, and X-ray photoelectron spectroscopy indicate two different oxidation states of Fe. Complete structural optimizations performed using the density functional theory establish a ferrimagnetic ground state and provide structural parameters in agreement with experimental values. Electronic structure analysis shows that Lu3Fe5O12 exhibits insulating behavior both in ferromagnetic and ferrimagnetic configurations. The capability of Lu3Fe5O12-δ to exhibit room temperature magneto-dielectric response is a key factor in designing and fabricating various electronic devices and sensors.

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Magnetoelectric Effect inCr2O3Single Crystal as Studied by Diel

Cited by 22 publications

References 15 publications

Electric and Magneto-Electric Properties of Cr<sub>2</sub>O<sub>3 </sub>Thin Films

Electric and Magneto-Electric Properties of Cr<sub>2</sub>O<sub>3 </sub>Thin Films

Effects of geometric size and mechanical boundary conditions on magnetoelectric coupling in multiferroic composites

Observation of direct magneto-dielectric behaviour in Lu₃Fe₅O_12−δ above room-temperature

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Magnetoelectric Effect inCr2O3Single Crystal as Studied by Diel

Cited by 22 publications

References 15 publications

Electric and Magneto-Electric Properties of Cr<sub>2</sub>O<sub>3 </sub>Thin Films

Electric and Magneto-Electric Properties of Cr<sub>2</sub>O<sub>3 </sub>Thin Films

Effects of geometric size and mechanical boundary conditions on magnetoelectric coupling in multiferroic composites

Observation of direct magneto-dielectric behaviour in Lu3Fe5O12−δ above room-temperature

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Observation of direct magneto-dielectric behaviour in Lu₃Fe₅O_12−δ above room-temperature