“…6 After reaching the n opt , a further enhancement in TE performance could be realized either through engineering the intrinsic electronic and phonon structures [7][8][9] or modulating the carrier and phonon scattering mechanisms, [10][11][12] aiming at the higher electrical power factor (PF = S 2 s), and the lower k L . There have been some effective strategies developed in recent years through the modulation of electronic band degenceracy, [13][14][15][16][17] band curvature, [18][19][20][21] valley anisotropy, 22,23 phonon anharmonicity, [24][25][26][27] multiscale phonon scattering, [28][29][30][31][32][33] and magnetism, [34][35][36][37] to name just a few.…”